Elliptic inequalities with lower order terms and L1 data in Orlicz spaces

AbstractWe prove an existence result for solutions of nonlinear elliptic unilateral problems having natural growth terms and L1 data in Orlicz–Sobolev spaces

Pathwise Sensitivity Analysis in Transient Regimes

The instantaneous relative entropy (IRE) and the corresponding instanta- neous Fisher information matrix (IFIM) for transient stochastic processes are pre- sented in this paper. These novel tools for sensitivity analysis of stochastic models serve as an extension of the well known relative entropy rate (RER) and the corre- sponding Fisher information matrix (FIM) that apply to stationary processes. Three cases are studied here, discrete-time Markov chains, continuous-time Markov chains and stochastic differential equations. A biological reaction network is presented as a demonstration numerical example

Existence of solutions for elliptic equations having natural growth terms in Orlicz spaces

Existence result for strongly nonlinear elliptic equation with a natural growth condition on the nonlinearity is proved

Parabolic inequalities with nonstandard growths and <inline-formula><graphic file="1687-2770-2006-29286-i1.gif"/></inline-formula> data

<p/> <p>We prove an existence result for solutions of nonlinear parabolic inequalities with <inline-formula><graphic file="1687-2770-2006-29286-i2.gif"/></inline-formula> data in Orlicz spaces.</p

Parabolic inequalities with nonstandard growths and L1 data

We prove an existence result for solutions of nonlinear parabolic inequalities with L1 data in Orlicz spaces

Parabolic inequalities in L1 as limits of renormalized equations

The paper deals with the existence of solutions of some parabolic bilateral problems approximated by the renormalized solutions of some parabolic equations

Electronic and optical properties of K-doped ZnO: Ab initio study

International audienceWe present the results of ab initio calculations of K-doped ZnO in the wurtzite structure using a supercell of 32 atoms and density functional theory. A complete analysis of its electronic, optical and magnetic properties is provided. The local spin density approximation (LSDA) has been used to analyze the density of states and to understand the K influence at different concentration values. The material is revealed to become a p-type doped semiconductor. The optical constant or refractive index, the dielectric function, and the absorption coefficient were determined and show a good agreement with available experimental data. Potassium doping leads to an absorption peak at about 380 nm. That peak might improve the absorption characteristics of ZnO for solar cell or optical applications