307 research outputs found

    Weak localization of holes in high-mobility heterostructures

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    Theory of weak localization is developed for two-dimensional holes in semiconductor heterostructures. Ballistic regime of weak localization where the backscattering occurs from few impurities is studied with account for anisotropic momentum scattering of holes. The transition from weak localization to anti-localization is demonstrated for long dephasing times. For stronger dephasing the conductivity correction is negative at all hole densities due to non-monotonous dependence of the spin relaxation time on the hole wavevector. The anomalous temperature dependent correction to the conductivity is calculated. We show that the temperature dependence of the conductivity is non-monotonous at moderate hole densities.Comment: 5 pages, 4 figure

    Characterization of deep impurities in semiconductors by terahertz tunneling ionization

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    Tunneling ionization in high frequency fields as well as in static fields is suggested as a method for the characterization of deep impurities in semiconductors. It is shown that an analysis of the field and temperature dependences of the ionization probability allows to obtain defect parameters like the charge of the impurity, tunneling times, the Huang–Rhys parameter, the difference between optical and thermal binding energy, and the basic structure of the defect adiabatic potentials. Compared to static fields, high frequency electric fields in the terahertz-range offer various advantages, as they can be applied contactlessly and homogeneously even to bulk samples using the intense radiation of a high power pulsed far-infrared laser. Furthermore, impurity ionization with terahertz radiation can be detected as photoconductive signal with a very high sensitivity in a wide range of electric field strengths

    Long-term Dynamics of the Electron-nuclear Spin System of a Semiconductor Quantum Dot

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    A quasi-classical theoretical description of polarization and relaxation of nuclear spins in a quantum dot with one resident electron is developed for arbitrary mechanisms of electron spin polarization. The dependence of the electron-nuclear spin dynamics on the correlation time τc\tau_c of electron spin precession, with frequency Ω\Omega, in the nuclear hyperfine field is analyzed. It is demonstrated that the highest nuclear polarization is achieved for a correlation time close to the period of electron spin precession in the nuclear field. For these and larger correlation times, the indirect hyperfine field, which acts on nuclear spins, also reaches a maximum. This maximum is of the order of the dipole-dipole magnetic field that nuclei create on each other. This value is non-zero even if the average electron polarization vanishes. It is shown that the transition from short correlation time to Ωτc>1\Omega\tau_c>1 does not affect the general structure of the equation for nuclear spin temperature and nuclear polarization in the Knight field, but changes the values of parameters, which now become functions of Ωτc\Omega\tau_c. For correlation times larger than the precession time of nuclei in the electron hyperfine field, it is found that three thermodynamic potentials (χ\chi, ξ\bm{\xi}, ς\varsigma) characterize the polarized electron-nuclear spin system. The values of these potentials are calculated assuming a sharp transition from short to long correlation times, and the relaxation mechanisms of these potentials are discussed. The relaxation of the nuclear spin potential is simulated numerically showing that high nuclear polarization decreases relaxation rate.Comment: RevTeX 4, 12 pages, 9 figure

    Manipulation of the Spin Memory of Electrons in n-GaAs

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    We report on the optical manipulation of the electron spin relaxation time in a GaAs based heterostructure. Experimental and theoretical study shows that the average electron spin relaxes through hyperfine interaction with the lattice nuclei, and that the rate can be controlled by the electron-electron interactions. This time has been changed from 300 ns down to 5 ns by variation of the laser frequency. This modification originates in the optically induced depletion of n-GaAs layer

    Theorem about the number and structure of the singular points n-dimensional dynamical system of population dynamics Lotka-Volterra in context of informational analysis and modeling

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    By elementary methods of combinatorial mathematics and uniqueness of solutions systems of linear algebraic equations for non degenerate cases proved a theorem about the number and structure of the singular points of n-dimensional dynamical system of population a dynamics Lotka-Volterra model. Showed that the number of singular points for this system is equal to 2 and their structure on a combination of zero nand nonzero coordinates coincides with the binomial coefficientsyesBelgorod State Universit

    Statistical forecasting of panel data based on state space models

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    Panel (or longitudinal) data describes a set of objects which are observed during certain period of time, so they consist of repeated observations of the same objects in sequential time periods. The following examples of panel data can be mentioned: annual household studies, monthly performance indicators for economic institutions and many others. In this study we provide another approach to forecasting cross-sectional data based on state space models together with Kalman filtering procedure

    Goldstone Mode Relaxation in a Quantum Hall Ferromagnet due to Hyperfine Interaction with Nuclei

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    Spin relaxation in quantum Hall ferromagnet regimes is studied. As the initial non-equilibrium state, a coherent deviation of the spin system from the B{\vec B} direction is considered and the breakdown of this Goldstone-mode state due to hyperfine coupling to nuclei is analyzed. The relaxation occurring non-exponentially with time is studied in terms of annihilation processes in the "Goldstone condensate" formed by "zero spin excitons". The relaxation rate is calculated analytically even if the initial deviation is not small. This relaxation channel competes with the relaxation mechanisms due to spin-orbit coupling, and at strong magnetic fields it becomes dominating.Comment: 8 page

    KTM TOKAMAK OPERATION SCENARIOS SOFTWARE INFRASTRUCTURE

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    One of the largest problems for tokamak devices such as Kazakhstan Tokamak for Material Testing (KTM) is the operation scenarios' development and execution. Operation scenarios may be varied often, so a convenient hardware and software solution is required for scenario management and execution. Dozens of diagnostic and control subsystems with numerous configuration settings may be used in an experiment, so it is required to automate the subsystem configuration process to coordinate changes of the related settings and to prevent errors. Most of the diagnostic and control subsystems software at KTM was unified using an extra software layer, describing the hardware abstraction interface. The experiment sequence was described using a command language.The whole infrastructure was brought together by a universal communication protocol supporting various media, including Ethernet and serial links. The operation sequence execution infrastructure was used at KTM to carry out plasma experiments

    The Nuclear Spin Nanomagnet

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    Linearly polarized light tuned slightly below the optical transition of the negatively charged exciton (trion) in a single quantum dot causes the spontaneous nuclear spin polarization (self-polarization) at a level close to 100%. The effective magnetic field of spin-polarized nuclei brings the optical transition energy into resonance with photon energy. The resonantly enhanced Overhauser effect sustains the stability of the nuclear self-polarization even in the absence of spin polarization of the quantum dot electron. As a result the optically selected single quantum dot represents a tiny magnet with the ferromagnetic ordering of nuclear spins - the nuclear spin nanomagnet.Comment: 19 pages, including 3 figures. Short version has been accepted for publication in Physical Review Letter
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