Free bianalytic maps between spectrahedra and spectraballs in a generic setting

Given a tuple $E=(E_1,\dots,E_g)$ of $d\times d$ matrices, the collection of those tuples of matrices $X=(X_1,\dots,X_g)$ (of the same size) such that $\| \sum E_j\otimes X_j\|\le 1$ is called a spectraball $\mathcal B_E$. Likewise, given a tuple $B=(B_1,\dots,B_g)$ of $e\times e$ matrices the collection of tuples of matrices $X=(X_1,\dots,X_g)$ (of the same size) such that $I + \sum B_j\otimes X_j +\sum B_j^* \otimes X_j^*\succeq 0$ is a free spectrahedron $\mathcal D_B$. Assuming $E$ and $B$ are irreducible, plus an additional mild hypothesis, there is a free bianalytic map $p:\mathcal B_E\to \mathcal D_B$ normalized by $p(0)=0$ and $p'(0)=I$ if and only if $\mathcal B_E=\mathcal B_B$ and $B$ spans an algebra. Moreover $p$ is unique, rational and has an elegant algebraic representation.Comment: 19 page

A Comparison of the Financial Characteristics of NAFTA and Latin American Manufacturing Firms

Comparing the financial characteristics of firms in different countries and different regions has been a popular research topic in finance. However, NAFTA and Latin American manufacturing firms have never been compared. In this paper, we undertake such a study with the MANOVA (Multivariate Analysis of Variance) method and with data drawn from the Research Insight/Global Vintage database in October 2015. Our findings indicate that NAFTA manufacturing firms have less liquidity risk, but more financial risk, compared with Latin American Manufacturing firms. NAFTA manufacturing firms have significantly higher returns on equity due to achieving higher returns on assets and using more financial leverage. Latin American manufacturing firms have more efficient inventory management. However, NAFTA manufacturing firms have more efficient accounts receivable management and total assets management

Graphene field-effect transistors based on boron nitride gate dielectrics

Graphene field-effect transistors are fabricated utilizing single-crystal hexagonal boron nitride (h-BN), an insulating isomorph of graphene, as the gate dielectric. The devices exhibit mobility values exceeding 10,000 cm2/V-sec and current saturation down to 500 nm channel lengths with intrinsic transconductance values above 400 mS/mm. The work demonstrates the favorable properties of using h-BN as a gate dielectric for graphene FETs.Comment: 4 pages, 8 figure

Improved GNSS-R bi-static altimetry and independent digital elevation models of Greenland and Antarctica from TechDemoSat-1

Improved digital elevation models (DEMs) of the Antarctic and Greenland ice sheets are presented, which have been derived from Global Navigation Satellite Systems-Reflectometry (GNSS-R). This builds on a previous study (Cartwright et al., 2018) using GNSS-R to derive an Antarctic DEM but uses improved processing and an additional 13 months of measurements, totalling 46 months of data from the UK TechDemoSat-1 satellite. A median bias of under 10 m and root-mean-square errors (RMSEs) of under 53 m for the Antarctic and 166 m for Greenland are obtained, as compared to existing DEMs. The results represent, compared to the earlier study, a halving of the median bias to 9 m, an improvement in coverage of 18 %, and a 4 times higher spatial resolution (now gridded at 25 km). In addition, these are the first published satellite altimetry measurements of the region surrounding the South Pole. Comparisons south of 88∘ S yield RMSEs of less than 33 m when compared to NASA's Operation IceBridge measurements. Differences between DEMs are explored, the limitations of the technique are noted, and the future potential of GNSS-R for glacial ice studies is discussed

Electronic compressibility of layer polarized bilayer graphene

We report on a capacitance study of dual gated bilayer graphene. The measured capacitance allows us to probe the electronic compressibility as a function of carrier density, temperature, and applied perpendicular electrical displacement D. As a band gap is induced with increasing D, the compressibility minimum at charge neutrality becomes deeper but remains finite, suggesting the presence of localized states within the energy gap. Temperature dependent capacitance measurements show that compressibility is sensitive to the intrinsic band gap. For large displacements, an additional peak appears in the compressibility as a function of density, corresponding to the presence of a 1-dimensional van Hove singularity (vHs) at the band edge arising from the quartic bilayer graphene band structure. For D > 0, the additional peak is observed only for electrons, while D < 0 the peak appears only for holes. This asymmetry that can be understood in terms of the finite interlayer separation and may be useful as a direct probe of the layer polarization

Graphene microwave transistors on sapphire substrates

We have developed metal-oxide graphene field-effect transistors (MOGFETs) on sapphire substrates working at microwave frequencies. For monolayers, we obtain a transit frequency up to ~ 80 GHz for a gate length of 200 nm, and a power gain maximum frequency of about ~ 3 GHz for this specific sample. Given the strongly reduced charge noise for nanostructures on sapphire, the high stability and high performance of this material at low temperature, our MOGFETs on sapphire are well suited for a cryogenic broadband low-noise amplifier