Flexible UV detectors based on in-situ hydrogen doped amorphous Ga2O3 with high photo-to-dark current ratio

Amorphous Ga _2 O _3 (a-Ga _2 O _3 ) has been attracting more and more attention due to its unique merits such as wide bandgap (∼4.9 eV), low growth temperature, large-scale uniformity, low cost and energy efficient, making it a powerful competitor in flexible deep ultraviolet (UV) photodetection. Although the responsivity of the ever-reported a-Ga _2 O _3 UV photodetectors (PDs) is usually in the level of hundreds of A/W, it is often accompanied by a large dark current due to the presence of abundant oxygen vacancy ( V _O ) defects, which severely limits the possibility to detect weak signals and achieve versatile applications. In this work, the V _O defects in a-Ga _2 O _3 thin films are successfully passivated by in-situ hydrogen doping during the magnetron sputtering process. As a result, the dark current of a-Ga _2 O _3 UV PD is remarkably suppressed to 5.17 × 10 ^−11 A at a bias of 5 V. Importantly, the photocurrent of the corresponding device is still as high as 1.37 × 10 ^−3 A, leading to a high photo-to-dark current ratio of 2.65 × 10 ^7 and the capability to detect the UV light with the intensity below 10 nW cm ^−2 . Moreover, the H-doped a-Ga _2 O _3 thin films have also been deposited on polyethylene naphtholate substrates to construct flexible UV PDs, which exhibit no great degradation in bending states and fatigue tests. These results demonstrate that hydrogen doping can effectively improve the performance of a-Ga _2 O _3 UV PDs, further promoting its practical application in various areas

Acceptor complex signatures in oxygen-rich ZnO thin films implanted with chlorine ions

Spectroscopic identification of defects and impurities is crucial for understanding doping asymmetry issues in ZnO and, therefore, realization of true ZnO-based bipolar devices. Chlorine (Cl) is an amphoteric impurity in ZnO exhibiting acceptor behavior in the interstitial configuration and donor action once on substitutional oxygen sites (ClO). In its turn, the incorporation of Cl atoms depends on the material growth conditions and a ClO fraction should be suppressed in O-rich materials. In the present work, Cl ions were implanted into ZnO thin films synthesized under O-rich conditions. In contrast to a negligible effect of Cl incorporation to electrical conductivity, photoluminescence measurements revealed dramatic developments of optical properties with a strong acceptor-like spectral signature emerging after 900 °C anneals. We discuss the origins of a new excitonic I* line (3.355 eV) induced by Cl-implantation and propose two alternative defect models based on shallow acceptor and shallow donor complexes

Photothermally enhanced photodynamic therapy based on mesoporous Pd@Ag@mSiO2 nanocarriers

In this work, we have demonstrated that mesoporous silica-coated Pd@Ag nanoparticles (Pd@Ag@mSiO2) can be used as an excellent nanoplatform for photodynamic therapy (PDT) drug delivery. Photosensitizer molecules, Chlorin e6 (Ce6), are covalently linked to the mesoporous shell and the prepared Pd@Ag@mSiO2-Ce6 nanoparticles exhibit excellent water solubility, good stability against leaching and high efficiency in photo-generating cytotoxic singlet oxygen. More importantly, the photothermal effect of Pd@Ag nanoplates under the irradiation of a NIR laser can enhance the uptake of Pd@Ag@mSiO2-Ce6 nanoparticles by cells, further increasing the PDT efficiency toward cancer cells. The photothermally enhanced PDT effects were demonstrated both in vitro and in vivo. When the Pd@Ag@mSiO2-Ce6 nanoparticles were injected intratumorally into the S180 tumor-bearing mice, the tumors were completely destroyed without recurrence of tumors upon irradiation with both 808 nm and 660 nm lasers, while the irradiation with 808 nm or 660 nm alone did not. These results indicate that the Pd@Ag@mSiO2 nanoparticles may be a valuable new tool for application in cancer phototherapy. This journal is ? The Royal Society of Chemistry 2013

Role of gallium wetting layer in high-quality ZnO growth on sapphire (0001) substrates

A Ga wetting layer was used to modify the surface structure of sapphire (0001) substrate to prepare high-quality ZnO film by radio frequency plasma-assisted molecule beam epitaxy. We found that this Ga layer plays a crucial role in eliminating 30° rotation domains, controlling polarity and decreasing defect density in ZnO epilayers, as demonstrated by in situ reflection high energy electron diffraction,ex situ high resolution X-ray diffraction and high resolution cross-sectional transmission electron microscopy. Zn-polar film of ZnO was determined by convergent beam electron diffraction. A Ga bilayer model is proposed to understand the effects of the Ga wetting layer on high-quality ZnO growth

Unraveling Thermal Transport Correlated with Atomistic Structures in Amorphous Gallium Oxide via Machine Learning Combined with Experiments.

Thermal transport properties of amorphous materials are crucial for their emerging applications in energy and electronic devices. However, understanding and controlling thermal transport in disordered materials remains an outstanding challenge, owing to the intrinsic limitations of computational techniques and the lack of physically intuitive descriptors for complex atomistic structures. Here, it is shown how combining machine-learning-based models and experimental observations can help to accurately describe realistic structures, thermal transport properties, and structure-property maps for disordered materials, which is illustrated by a practical application on gallium oxide. First, the experimental evidence is reported to demonstrate that machine-learning interatomic potentials, generated in a self-guided fashion with minimum quantum-mechanical computations, enable the accurate modeling of amorphous gallium oxide and its thermal transport properties. The atomistic simulations then reveal the microscopic changes in the short-range and medium-range order with density and elucidate how these changes can reduce localization modes and enhance coherences' contribution to heat transport. Finally, a physics-inspired structural descriptor for disordered phases is proposed, with which the underlying relationship between structures and thermal conductivities is predicted in a linear form. This work may shed light on the future accelerated exploration of thermal transport properties and mechanisms in disordered functional materials