Abruptio placentae: impact of early treatment on maternal and fetal outcomes

Background: Haemorrhage is the leading cause for maternal mortality in India as well as the world. Abruptio placenta is the second most common cause of antepartum haemorrhage and it is associated with sudden, severe and devastating maternal and fetal complications. The main objective of this study is to study the impact of early treatment on maternal and fetal outcomes.Methods: This single center retrospective study includes all patients admitted at Lokmanya Tilak Municipal General Hospital, a tertiary referral hospital, diagnosed to have abruptio placenta (grade II and grade III) from 01 July 2019 to 31 December 2019. In this study a total of 48 cases were included and data regarding time duration between onset of symptoms and initiation of treatment, clinical course and maternal and fetal outcomes was noted.Results: A total of 5059 deliveries occurred over six months. The incidence of placental abruption was found to be 0.94%. Patients receiving early care (30 cases, 62.5%) were found to have significantly better maternal outcomes (p=0.006, Chi square test) as well as fetal outcomes (p=0.007, Fischer’s exact test) than patients who received delayed care (18 cases, 37.5%).Conclusions: Abruptio placentae is an obstetric emergency and early diagnosis as well as initiation of treatment plays an important role in curbing complications. Strengthening of peripheral centers, availability of multi-disciplinary approach and educating health care staff as well as patients form the cornerstones of improved maternal and fetal outcomes

Nanoscale Defect Formation on InP(111) Surfaces after MeV Sb Implantation

We have studied the surface modifications as well as the surface roughness of the InP(111) surfaces after 1.5 MeV Sb ion implantations. Scanning Probe Microscope (SPM) has been utilized to investigate the ion implanted InP(111) surfaces. We observe the formation of nanoscale defect structures on the InP surface. The density, height and size of the nanostructures have been investigated here as a function of ion fluence. The rms surface roughness, of the ion implanted InP surfaces, demonstrates two varied behaviors as a function of Sb ion fluence. Initially, the roughness increases with increasing fluence. However, after a critical fluence the roughness decreases with increasing fluence. We have further applied the technique of Raman scattering to investigate the implantation induced modifications and disorder in InP. Raman Scattering results demonstrate that at the critical fluence, where the decrease in surface roughness occurs, InP lattice becomes amorphous.Comment: 18 pages, 9 figure

Cell-Free DNA and Active Rejection in Kidney Allografts

Histologic analysis of the allograft biopsy specimen is the standard method used to differentiate rejection from other injury in kidney transplants. Donor-derived cell-free DNA (dd-cfDNA) is a noninvasive test of allograft injury that may enable more frequent, quantitative, and safer assessment of allograft rejection and injury status. To investigate this possibility, we prospectively collected blood specimens at scheduled intervals and at the time of clinically indicated biopsies. In 102 kidney recipients, we measured plasma levels of dd-cfDNA and correlated the levels with allograft rejection status ascertained by histology in 107 biopsy specimens. The dd-cfDNA level discriminated between biopsy specimens showing any rejection (T cell-mediated rejection or antibody-mediated rejection [ABMR]) and controls (no rejection histologically), P1% indicate a probability of active rejection

Assessment of Radionuclide Concentration and Exhalation Rates in some NORMs and TENORMs of Shivalik Region

520-525226Ra, 232Th, their decay products 222Rn, 220Rn and 40K significantly contribute to the mean dose from natural background radiation. This study reports the concentration of radionuclides in Naturally Occurring Radioactive Materials (NORMS) and Technologically Enhanced Naturally Occurring Radioactive Materials (TENORMS) of the Shivalik region of Punjab and Himachal Pradesh. The activity of radionuclides 226Ra, 232Th and 40K in different NORMS (soil, sand, rocks) and TENORMS (tiles, marble, cement) were calculated by Gamma spectrometry method using an HPGe detector. Radon mass exhalation and thoron surface exhalation rates were also determined using a Smart RnDuo monitor for the above samples. From the results, it could be concluded that the radon mass exhalation rate and radium activity were obtained to be maximum for tile no. 2 and minimum for white marble samples. Similarly, the thoron surface exhalation rate and thorium activity occurred maximum in tile no. 2 and minimum for safedi. The radium equivalent activity (Raea), gamma activity concentration index (I), internal hazard index (Hint) and external hazard index (Hext) were computed using appropriate relations. The values range between 5.858 to 188.944, 0.0403 to 1.377, 0.028 to 0.615 and 0.015 to 0.510 having mean values of 107.256, 0.685, 0.325, and 0.256, respectively

Tailoring the Properties of Nanocrystalline Tin(II) Selenide Films through Precursor Concentration Modulation

365-368An X-ray diffractometer for structural, a UV-VIS Spectrophotometer for optical, and a unique aluminium sample holder intended to examine the electrical properties of the synthesized SnSe thin films on non-conductive glass substrates in an alkaline medium were used. Light shining through a transparent glass window illuminated the samples to examine their electrical (photoconductivity) properties. The XRD results show that all of the films are orthorhombic crystals. The concentration of the precursor affects microstructural characteristics such as micro strain, crystallite size, and dislocation density. SnSe thin films' optical bandgap is measured using absorbance measurements. Semiconducting properties are confirmed by measuring the electrical conductivity, which reaches its highest value at the optimal precursor concentration. The as-grown SnSe films exhibit tunable photo response properties, which boost the practical application of the films in photovoltaic and solar cells