Scaling of AlN/GaN HEMT for millimeter-wave power applications

International audienceIn this paper, we report on AlN/GaN HEMTs for high frequency applications. Various gate lengths have been studied as a function of the gate-drain distance in order to analyze the impact on the DC, RF and power performances. Electrical characteristics of this structure for 110 nm gate length show a maximum drain current of 1.2 A/mm, an extrinsic transconductance Gm of 400 mS/mm and a FT/Fmax of 63/300 GHz at a drain bias voltage VDS = 20V. An excellent electron confinement with a low leakage current below 10 µA/mm is achieved. Furthermore, a breakdown voltage of 55 V for GD0.5 and up to 140 V for GD2.5 are observed when using a 110 nm short gate length. Large signal characteristics at 40 GHz reveal a state-of-the-art combination of power added efficiency (PAE) (50%) with an output power density (Pout) of 3.6 W/mm at VDS = 20 V in continuous wave mode (CW) and PAE of 50% associated with a Pout of 8.3 W/mm at 40V in pulsed mode. It can be noticed that the 110 nm gate length GD0.5 showed no degradation after semi-on robustness tests and large signal measurements up-to VDS = 20V

Demonstration of GaN-on-silicon material system operating up to 3 kilovolts with reduced trapping effects

International audienceWe report on the first demonstration of low trapping effects up to 3000 V within GaN-on-silicon epitaxial layers using a local substrate removal (LSR) followed by a thick backside ultra-wide-bandgap AlN deposition. The fabricated AlGaN/GaN devices deliver low specific on-resistance below 10 mΩcm 2 together with unprecedented 3-terminal blocking voltage while substrate ramp measurements show reduced hysteresis up to 3000 V. These results pave the way for beyond 1200 V applications using large wafer diameter GaN-on-Si high electron mobility transistors

GaN-based transistors using buffer-free heterostructures for next generation RF devices

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AlGaN/GaN High Electron Mobility Transistors with Ultra -Wide Bandgap AlN buffer

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Autonomous vehicles and smart cities- future directions of ownership vs shared mobility

Over the last decade, there has been increasing discussions about self-driving cars and how most auto-makers are racing to launch these products. However, this discourse is not limited to transportation only, but how such vehicles will affect other industries and specific aspects of our daily lives as future users such as the concept of work while being driven and productivity, entertainment, travel speed, and deliveries. Although these technologies are beneficial, access to these potentials depends on the behaviour of their users. There is a lack of a conceptual model that elucidate the acceptance of people to Self-driving cars. Service on-demand and shared mobility are the most critical factors that will ensure the successful adoption of these cars. This paper presents an analysis of public opinions in Nottingham, UK, through a questionnaire about the future of Autonomous vehicles' ownership and the extent to which they accept the idea of vehicle sharing. Besides, this paper tests two hypotheses. Firstly, (a) people who usually use Public transportation like (taxi, bus, tram, train, carpooling) are likely to share an Autonomous Vehicle in the future. Secondly, (b) people who use Private cars are expected to own an Autonomous Vehicle in the future. To achieve this aim, a combination of statistical methods such as logistic regression has been utilised. Unexpectedly, the study findings suggested that AVs ownership will increase contrary to what is expected, that Autonomous vehicles will reduce ownership. Besides, participants have shown low interest in sharing AVs. Therefore, it is likely that ownership of AVs will increase for several reasons as expressed by the participants such as safety, privacy, personal space, suitability to children and availability. Actions must be taken to promote shared mobility to avoid AVs possession growth. The ownership diminution, in turn, will reduce traffic congestion, energy and transport efficiency, better air quality. That is why analysing the factors that influence the mindset and attitude of people will enable us to understand how to shift from private cars to transport-on-demand, which is a priority rather than promoting the technology

Buffer breakdown in GaN-on-Si HEMTs: A comprehensive study based on a sequential growth experiment

Abstract The aim of this work is to investigate the breakdown mechanisms of the layers constituting the vertical buffer of GaN-on-Si HEMTs; in addition, for the first time we demonstrate that the breakdown field of the AlN nucleation layer grown on a silicon substrate is equal to 3.2 MV/cm and evaluate its temperature dependence. To this aim, three samples, obtained by stopping the epitaxial growth of a GaN on Silicon stack at different steps, are studied and compared: Si/AlN, Si/AlN/AlGaN, full vertical stack up to the Carbon doped buffer layer. The current-voltage (IV) characterizations performed at both room temperature and high temperature show that: (i) the defectiveness of the AlN nucleation layer is the root cause of the leakage through an AlN/Silicon junction, and causes the vertical I-V characteristics to have a high device-to-device variability; (ii) the first AlGaN layer grown over the AlN, beside improving the breakdown voltage of the whole structure, causes the leakage current to be more stable and uniform across the sample area; (iii) a thick strain-relief stack and a carbon-doped GaN buffer enhance the breakdown voltage up to more than 750 V at 170 °C, and guarantee a remarkably low device-to-device variability. Furthermore, a set of constant voltage stress on the Si/AlN sample demonstrate that the aluminum nitride layer shows a time dependent breakdown, with Weibull-distributed failures and a shape factor greater than 1, in line with the percolation model

Vertical breakdown of GaN on Si due to V-pits

Gallium nitride on silicon (GaN/Si) is an important technological approach for power electronic devices exhibiting superior performance compared to devices based on a pure silicon technology. However, the material defect density in GaN/Si is high, and identification of critical defects limiting device reliability is still only partially accomplished because of experimental difficulties. In this work, atomic force microscopy, scanning electron microscopy, secondary ion mass spectrometry, and cathodoluminescence were employed to investigate commonly occurring epitaxial overgrown V-pits and inhomogeneous incorporation of oxygen and carbon across layer stacking in the vertical direction. These experiments identified V-pits as regions with higher n-type carrier concentrations and paths for vertical leakage through the buffer, as directly probed by conductive atomic force microscopy. The deleterious effect of V-pits on device performance is demonstrated by evaluating test devices fabricated on two wafers with significantly diverse density of buried V-pits induced by varying growth conditions of the aluminum nitride nucleation layer. A clear correlation between observed vertical breakdown and density of V-pits within the C-doped GaN layer below the device structures is obtained. Back-gating transient measurements also show that the dynamic device behavior is affected by the V-pit density in terms of the detrapping time constants.Gallium nitride on silicon (GaN/Si) is an important technological approach for power electronic devices exhibiting superior performance compared to devices based on a pure silicon technology. However, the material defect density in GaN/Si is high, and identification of critical defects limiting device reliability is still only partially accomplished because of experimental difficulties. In this work, atomic force microscopy, scanning electron microscopy, secondary ion mass spectrometry, and cathodoluminescence were employed to investigate commonly occurring epitaxial overgrown V-pits and inhomogeneous incorporation of oxygen and carbon across layer stacking in the vertical direction. These experiments identified V-pits as regions with higher n-type carrier concentrations and paths for vertical leakage through the buffer, as directly probed by conductive atomic force microscopy. The deleterious effect of V-pits on device performance is demonstrated by evaluating test devices fabricated on two wafers with s..