HgSe, a highly electronegative stable metallic contact for semiconductor devices

Schottky barriers formed by the highly electronegative substance HgSe on n-ZnS and on n-ZnSe have been characterized by capacitance-voltage and photoresponse measurements. The barriers are about 0.5 eV greater than Au barriers on these n-type substrates. HgSe contacts are stable under ambient conditions and are easily fabricated, making them attractive for device use

Highly electronegative metallic contacts to semiconductors using polymeric sulfur nitride

The Schottky barriers formed on n‐ZnS and n‐ZnSe by polymeric sulfur nitride have been compared to barriers formed by Au. Barrier energies as determined by photoresponse, current‐voltage, and capacitance‐voltage methods show that (SN)_x is approximately 1.0 eV higher than Au on n‐ZnS and 0.3–0.4 eV higher than Au on n‐ZnSe. We believe that this is the first report of any metallic contact more electronegative than Au

BRAVO economic study of LANDSAT follow-on

The LANDSAT Follow-On satellite consists of two major systems: the instrument module and the Multi-Mission Modular Spacecraft (MMS). The instrument module contains the thematic mapper and the five-band multispectral scanner instruments. The instrument module also includes the solar array, the tracking and data relay satellite (TDRS) antenna, and the wideband data module. The MMS contains the modularized and standardized power, propulsion, attitude control, and command and data handling subsystems. The Shuttle will be supporting the LANDSAT Follow-On system. The LANDSAT Follow-On Project plans two Delta 3910 launches. The first is scheduled for 1981; the second Delta launch will occur as needed to keep one satellite operational on orbit. The second satellite will be ready six months after the first. It could be launched any time after that. Shuttle support of the system could begin in early 1983 but would be scheduled to start after the second Delta launch

The Presence of Deep Levels in Ion Implanted Junctions

It has been found that ion implantation doping results in the generation and diffusion of defect species, forming deep trapping levels. The effect of these levels on the electrical characteristics of zinc‐implanted GaAs diodes has been observed for the case of 70‐kV implantation at 400°C into substrates with n‐type concentrations ranging from 1 × 10^16 to 1.8 × 10^18 atoms/cm^3. Capacitance‐voltage measurements have indicated the presence of a semi‐insulating layer in the diodes, varying in thickness from 0.18 μ for the most heavily doped substrate to 2.7 μ for the lightest. Frequency dependence of the junction capacitance and power law variation of forward current vs voltage have also been observed and are attributed to deep levels

Berry's Phase in the Presence of a Stochastically Evolving Environment: A Geometric Mechanism for Energy-Level Broadening

The generic Berry phase scenario in which a two-level system is coupled to a second system whose dynamical coordinate is slowly-varying is generalized to allow for stochastic evolution of the slow system. The stochastic behavior is produced by coupling the slow system to a heat resevoir which is modeled by a bath of harmonic oscillators initially in equilibrium at temperature T, and whose spectral density has a bandwidth which is small compared to the energy-level spacing of the fast system. The well-known energy-level shifts produced by Berry's phase in the fast system, in conjunction with the stochastic motion of the slow system, leads to a broadening of the fast system energy-levels. In the limit of strong damping and sufficiently low temperature, we determine the degree of level-broadening analytically, and show that the slow system dynamics satisfies a Langevin equation in which Lorentz-like and electric-like forces appear as a consequence of geometrical effects. We also determine the average energy-level shift produced in the fast system by this mechanism.Comment: 29 pages, RevTex, submitted to Phys. Rev.

Schottky-based band lineups for refractory semiconductors

An overview is presented of band alignments for small-lattice parameter, refractory semiconductors. The band alignments are estimated empirically through the use of available Schottky barrier height data, and are compared to theoretically predicted values. Results for tetrahedrally bonded semiconductors with lattice constant values in the range from C through ZnSe are presented. Based on the estimated band alignments and the recently demonstrated p-type dopability of GaN, we propose three novel heterojunction schemes which seek to address inherent difficulties in doping or electrical contact to wide-gap semiconductors such as ZnO, ZnSe, and ZnS

Calicivirus emergence from ocean reservoirs: zoonotic and interspecies movements.

Caliciviral infections in humans, among the most common causes of viral-induced vomiting and diarrhea, are caused by the Norwalk group of small round structured viruses, the Sapporo caliciviruses, and the hepatitis E agent. Human caliciviruses have been resistant to in vitro cultivation, and direct study of their origins and reservoirs outside infected humans or water and foods (such as shellfish contaminated with human sewage) has been difficult. Modes of transmission, other than direct fecal-oral routes, are not well understood. In contrast, animal viruses found in ocean reservoirs, which make up a second calicivirus group, can be cultivated in vitro. These viruses can emerge and infect terrestrial hosts, including humans. This article reviews the history of animal caliciviruses, their eventual recognition as zoonotic agents, and their potential usefulness as a predictive model for noncultivatable human and other animal caliciviruses (e.g., those seen in association with rabbit hemorrhagic disease)

Quantitative EEG parameters correlate with the progression of human prion diseases

BACKGROUND: Prion diseases are universally fatal and often rapidly progressive neurodegenerative diseases. EEG has long been used in the diagnosis of sporadic Creutzfeldt-Jakob disease; however, the characteristic waveforms do not occur in all types of prion diseases. Here, we re-evaluate the utility of EEG by focusing on the development of biomarkers. We test whether abnormal quantitative EEG parameters can be used to measure disease progression in prion diseases or predict disease onset in healthy individuals at risk of disease. METHODS: In the National Prion Monitoring Cohort study, we did quantitative encephalography on 301 occasions in 29 healthy controls and 67 patients with prion disease. The patients had either inherited prion disease or sporadic Creutzfeldt-Jakob disease. We computed the main background frequency, the α and θ power and the α/θ power ratio, then averaged these within 5 electrode groups. These measurements were then compared among participant groups and correlated with functional and cognitive scores cross-sectionally and longitudinally. RESULTS: We found lower main background frequency, α power and α/θ power ratio and higher θ power in patients compared to control participants. The main background frequency, the power in the α band and the α/θ power ratio also differed in a consistent way among the patient groups. Moreover, the main background frequency and the α/θ power ratio correlated significantly with functional and cognitive scores. Longitudinally, change in these parameters also showed significant correlation with the change in clinical and cognitive scores. CONCLUSIONS: Our findings support the use of quantitative EEG to follow the progression of prion disease, with potential to help evaluate the treatment effects in future clinical-trials