Molecular tuning of the magnetic response in organic semiconductors

The tunability of high-mobility organic semi-conductors (OSCs) holds great promise for molecular spintronics. In this study, we show this extreme variability - and therefore potential tunability - of the molecular gyromagnetic coupling ("g-") tensor with respect to the geometric and electronic structure in a much studied class of OSCs. Composed of a structural theme of phenyl- and chalcogenophene (group XVI element containing, five-membered) rings and alkyl functional groups, this class forms the basis of several intensely studied high-mobility polymers and molecular OSCs. We show how in this class the g-tensor shifts, $\Delta g$, are determined by the effective molecular spin-orbit coupling (SOC), defined by the overlap of the atomic spin-density and the heavy atoms in the polymers. We explain the dramatic variations in SOC with molecular geometry, chemical composition, functionalization, and charge life-time using a first-principles theoretical model based on atomic spin populations. Our approach gives a guide to tuning the magnetic response of these OSCs by chemical synthesis

Tuning the effective spin-orbit coupling in molecular semiconductors

The control of spins and spin to charge conversion in organics requires understanding the molecular spin-orbit coupling (SOC), and a means to tune its strength. However, quantifying SOC strengths indirectly through spin relaxation effects has proven difficult due to competing relaxation mechanisms. Here we present a systematic study of the g-tensor shift in molecular semiconductors and link it directly to the SOC strength in a series of high-mobility molecular semiconductors with strong potential for future devices. The results demonstrate a rich variability of the molecular g-shifts with the effective SOC, depending on subtle aspects of molecular composition and structure. We correlate the above g-shifts to spin-lattice relaxation times over four orders of magnitude, from 200 to 0.15 μs, for isolated molecules in solution and relate our findings for isolated molecules in solution to the spin relaxation mechanisms that are likely to be relevant in solid state systems.S.S. thanks the Winton Programme for the Physics of Sustainability, the Engineering and Physical Sciences Research Council (EPSRC), C. Daniel Frisbie for supplying d28-rubrene and Shin-ichi Kuroda for useful discussions. Funding from the Alexander von Humboldt Foundation, ERC Synergy Grant SC2 (No. 610115), and the Transregional Collaborative Research Center (SFB/TRR) 173 SPIN+X is acknowledged

Van der Waals epitaxy between the highly lattice mismatched Cu-doped FeSe and Bi₂Te₃

We present a structural and density functional theory study of FexCu1−xSe within the three-dimensional topological insulator Bi2Te3. The FexCu1−xSe inclusions are single-crystalline and epitaxially oriented with respect to the Bi2Te3 thin film. Aberration-corrected scanning transmission electron microscopy and electron energy loss spectroscopy show an atomically sharp FeICu1−xSe/Bi2Te3 interface. The FexCu1−xSe/Bi2Te3 interface is determined by Se–Te bonds and no misfit dislocations are observed, despite the different lattice symmetries and large lattice mismatch of ∼19%. First-principle calculations show that the large strain at the FexCu1−xSe/Bi2Te3 interface can be accommodated by van der Waals-like bonding between Se and Te atoms

Vacancy and Doping States in Monolayer and bulk Black Phosphorus.

The atomic geometries and transition levels of point defects and substitutional dopants in few-layer and bulk black phosphorus are calculated. The vacancy is found to reconstruct in monolayer P to leave a single dangling bond, giving a negative U defect with a +/- transition level at 0.24 eV above the valence band edge. The V(-) state forms an unusual 4-fold coordinated site. In few-layer and bulk black P, the defect becomes a positive U site. The divacancy is much more stable than the monovacancy, and it reconstructs to give no deep gap states. Substitutional dopants such as C, Si, O or S do not give rise to shallow donor or acceptor states but instead reconstruct to form non-doping sites analogous to DX or AX centers in GaAs. Impurities on black P adopt the 8-N rule of bonding, as in amorphous semiconductors, rather than simple substitutional geometries seen in tetrahedral semiconductors

Long spin diffusion lengths in doped conjugated polymers due to enhanced exchange coupling

Carbon-based semiconductors such as conjugated organic polymers are of potential use in the development of spintronic devices and spin-based information processing. In particular, these materials offer a low spin–orbit coupling strength due to their relatively light constituent chemical elements, which should, in principle, favour long spin diffusion lengths. However, organic polymers are relatively disordered materials and typically have a carrier mobility that is orders of magnitude lower than crystalline inorganic materials. As a result, small spin diffusion lengths of around 50 nm have typically been measured using vertical organic spin valves. Here we report measuring spin diffusion lengths in doped conjugated polymers using a lateral spin transport device architecture, which is based on spin pumping injection and inverse spin Hall detection. The approach suggests that long spin diffusion lengths of more than 1 micron and fast spin transit times of around 10 ns are possible in conjugated polymer systems when they have a sufficiently high spin density (around 10^20 cm-3). We explain these results in terms of an exchange-based spin diffusion regime in which the exchange interactions decouple spin and charge transport.European Research Counci