Ferroelectric HfO2 Thin Films for FeFET Memory Devices

Silicon-doped hafnium oxide has been shown to exhibit ferroelectric properties under the certain small thicknesses with appropriate applied stress and annealing conditions. Utilizing Si:HfO2 as the dielectric with a TiN capping layer in a ferroelectric field-effect-transistor (FeFET) is promising as a potential emerging memory device due to the ease in integration with standard CMOS process flows. The process developed at RIT was successful in fabricating n-channel FeFETs of varying dimensions. The work done here utilizes a 10 nm thick ALD Si:HfO2 film that has a remnant polarization of 10.34 micrometerC=cm2 and an average memory window of 572.3 mV . The subthreshold characteristics were consistent in both the on and off state with a calculated subthreshold swing around 110 mV=dec

Campus Vol IV N 3

Hawk, Bob. Adventures of a Private Eye . Prose. 3. Gillies, Jean. The Fine Arts . Prose. 4. Hauser, Bill. After Hours Almanac . Prose. 5. Chase, Dick. Admirals of the Inland Lake . Prose. 6. Runkle, Pete. They Float Through the Air With the Greatest . Prose. 8. Barton, Rusty. Threads For the Female . Prose. 10. Crocker, Larry. Innocents Abroad . Prose. 11. Wilson, Bob. The Drums of Port Au Prince . Prose. 12. Johnston, Ed. Threads For the Male . Prose. 14. Kreuger, Ben. Column For Contributors . 15. Rounds, Dave. Untitled. Cartoon. 21. Taggart, Marilou. Nightmare . Poem. 22. Thompson, Rolan. Cover. Picture. 0. Cover, Frank and John Trimble. Campus Congratulates Emotion . Picture. 2. Rees, Tom. Our March Pin-Up Girl . Picture. 7. Rees, Tom. They Fly Through the Air With the Greatest . Picture. 8. McGlone, Joe and Tom Rees. Threads for Females . Picture. 10