The Non-Optimality of Proposed Monetary Policy Rules Under Timeless-Perspective Commitment

Several recent papers have usefully emphasized the inefficiency that arises from discretionary monetary policymaking, relative to optimal policy from a 'timeless perspective,' in macroeconomic models with forward-looking private behavior. The inefficiency in question is in terms of average outcomes of the conditional expectation of a policy objective that reflects the discounted present value of current and future period losses (which involve squared deviations of inflation and output from specified target levels). In the literature, most of the analysis has been conducted in an optimizing model that features a Calvo-Rotemberg price adjustment equation that includes a 'cost-push' shock term. This literature suggests that policy, which keeps inflation equal to a negative multiple of the change in the output gap, is optimal with respect to the criterion mentioned above -- the unconditional expectation of the policymaker's objective function. Results reported here show, however, that this is not the case -- that an alternative policy rule, suggested by the approach of 'policy design' rather than by 'optimal control,' delivers superior results.

Hydrogen refinement during solid phase epitaxy of buried amorphous silicon layers

The effect of hydrogen on the kinetics of solid phase epitaxy (SPE) have been studied in buried amorphous Si layers. The crystallization rate of the front amorphous/crystalline (a/c) interface is monitored with time resolved reflectivity.Secondary ion mass spectrometry(SIMS) is used to examine H implanted profiles at selected stages of the anneals. The H retardation of the SPE rate is determined up to a H concentration of 2.3×10²⁰ cm¯³ where the SPE rate decreases by 80%. Numerical simulations are performed to model the H diffusion, the moving a/c interfaces and the refinement of the H profile at these interfaces. Despite the high H concentration involved, a simple Fickian diffusion model results in good agreement with the SIMS data. The segregation coefficient is estimated to be 0.07 at 575 °C. A significant fraction of the H escapes from the a-Si layer during SPE especially once the two a/c interfaces meet which is signified by the lack of H-related voids after a subsequent high temperature anneal.This research was supported by a grant from the Australian Research Council

Man about the House: Male Domesticity and Fatherhood in Soviet Visual Satire under Khrushchev

This is the author accepted manuscript. The final version is available from Palgrave Macmillan via the link in this recor

Deep level transient spectroscopy study for the development of ion-implanted silicon field-effect transistors for spin-dependent transport

A deep level transient spectroscopy (DLTS) study of defects created by low-fluence, low-energy ion implantation for development of ion-implanted silicon field-effect transistors for spin-dependent transport experiments is presented. Standard annealing strategies are considered to activate the implanted dopants and repair the implantation damage in test metal-oxide-semiconductor (MOS) capacitors. Fixed oxide charge, interface trapped charge and the role of minority carriers in DLTS are investigated. A furnace anneal at 950 $\rm ^{o}$C was found to activate the dopants but did not repair the implantation damage as efficiently as a 1000 $\rm ^{o}$C rapid thermal anneal. No evidence of bulk traps was observed after either of these anneals. The ion- implanted spin-dependent transport device is shown to have expected characteristics using the processing strategy determined in this study.Comment: 4 pages, 6 figure

Open Access

Measuring electromagnetic fields (EMF) around wind turbines in Canada: is there a human health concern

Differential thermal analysis and solution growth of intermetallic compounds

To obtain single crystals by solution growth, an exposed primary solidification surface in the appropriate, but often unknown, equilibrium alloy phase diagram is required. Furthermore, an appropriate crucible material is needed, necessary to hold the molten alloy during growth, without being attacked by it. Recently, we have used the comparison of realistic simulations with experimental differential thermal analysis (DTA) curves to address both these problems. We have found: 1) complex DTA curves can be interpreted to determine an appropriate heat treatment and starting composition for solution growth, without having to determine the underlying phase diagrams in detail. 2) DTA can facilitate identification of appropriate crucible materials. DTA can thus be used to make the procedure to obtain single crystals of a desired phase by solution growth more efficient. We will use some of the systems for which we have recently obtained single-crystalline samples using the combination of DTA and solution growth as examples. These systems are TbAl, Pr$_7$Ni$_2$Si$_5$, and YMn$_4$Al$_8$.Comment: 17 pages, 8 figure