Evaluation of young smokers and non-smokers with Electrogustometry and Contact Endoscopy

<p>Abstract</p> <p>Background</p> <p>Smoking is the cause of inducing changes in taste functionality under conditions of chronic exposure. The objective of this study was to evaluate taste sensitivity in young smokers and non-smokers and identify any differences in the shape, density and vascularisation of the fungiform papillae (fPap) of their tongue.</p> <p>Methods</p> <p>Sixty-two male subjects who served in the Greek military forces were randomly chosen for this study. Thirty-four were non-smokers and 28 smokers. Smokers were chosen on the basis of their habit to hold the cigarette at the centre of their lips. Taste thresholds were measured with Electrogustometry (EGM). The morphology and density of the fungiform papillae (fPap) at the tip of the tongue were examined with Contact Endoscopy (CE).</p> <p>Results</p> <p>There was found statistically important difference (<it>p </it>< 0.05) between the taste thresholds of the two groups although not all smokers presented with elevated taste thresholds: Six of them (21%) had taste thresholds similar to those of non-smokers. Differences concerning the shape and the vessels of the fungiform papillae between the groups were also detected. Fewer and flatter fPap were found in 22 smokers (79%).</p> <p>Conclusion</p> <p>The majority of smokers shown elevated taste thresholds in comparison to non-smokers. Smoking is an important factor which can lead to decreased taste sensitivity. The combination of methods, such as EGM and CE, can provide useful information about the vascularisation of taste buds and their functional ability.</p

Size dependent influence of the pad and gate parasitic elements to the microwave and noise performance of the 0.35 µm n and p type MOSFETs.

Noise and s-parameters of the p and n type MOSFETs were measured and simulated for the different bias points. The pad parasitic models of the „short“ and „open“ were extracted by means of comparison of measured and simulated s-parameters. The influence of the pad elements on the microwave noise was analyzed. The simulation of intrinsic device noise was performed on the basis of good fit of measured and simulated noise and s-parameters of the DUT. For the narrow gate (50 µm) width devices the pad parasitics significantly affect microwave noise performance for both p and n type devices. At the lower drain currents the kinks and loops in the s-parameters were observed. At low drain current a resonant peak in NFmin and Rn around 8 GHz was found. Those resonant effects observed in noise and s-parameters diminish with the increase of the drain current and were qualitatively accounted for by the simulations by using equivalent circuit with the parasitic inductive element coupled to the gate

Nonlinear transport and fluctuation characteristics of doped semiconductors

Fluctuation phenomena in doped n-type GaAs, at moderate applied electric fields being influenced by interelectron scattering, are interpreted in terms of effective electron temperature. Electron Fick’s diffusion coefficients in longitudinal and transfer direction are estimated

Tagged-electron and Fick's diffusion coefficients from hot-electron velocity fluctuations in doped GaAs at 80 K

International audienc

Noise and electron diffusion in doped n -type GaAs at heating electric fields

International audienc