836 research outputs found
Pressure Tuning of an Ionic Insulator into a Heavy Electron Metal: An Infrared Study of YbS
Optical conductivity [] of YbS has been measured under
pressure up to 20 GPa. Below 8 GPa, is low since YbS is an
insulator with an energy gap between fully occupied 4 state and unoccupied
conduction () band. Above 8 GPa, however, increases
dramatically, developing a Drude component due to heavy carriers and
characteristic infrared peaks. It is shown that increasing pressure has caused
an energy overlap and hybridization between the band and 4 state, thus
driving the initially ionic and insulating YbS into a correlated metal with
heavy carriers
Metal-insulator transition in PrRuP and SmRuP investigated by optical spectroscopy
Electronic structures of the filled-skutterudite compounds PrRuP
and SmRuP, which undergo a metal-insulator transition (MIT) at
= 60 K and 16 K, respectively, have been studied by means of
optical spectroscopy. Their optical conductivity spectra develop an energy gap
of 10 meV below . The observed characteristics of the energy
gap are qualitatively different from those of the Kondo semiconductors. In
addition, optical phonon peaks in the spectra show anomalies upon the MIT,
including broadening and shifts at and an appearance of new peaks
below . These results are discussed in terms of density waves or
orbital ordering previously predicted for these compounds.Comment: 4pages, 4figures, submitted to Physical Review
Optical Conductivity and Electronic Structure of CeRu4Sb12 under High Pressure
Optical conductivity [s(w)] of Ce-filled skutterudite CeRu4Sb12 has been
measured at high pressure to 8 GPa and at low temperature, to probe the
pressure evolution of its electronic structures. At ambient pressure, a
mid-infrared peak at 0.1 eV was formed in s(w) at low temperature, and the
spectral weight below 0.1 eV was strongly suppressed, due to a hybridization of
the f electron and conduction electron states. With increasing external
pressure, the mid-infrared peak shifts to higher energy, and the spectral
weight below the peak was further depleted. The obtained spectral data are
analyzed in comparison with band calculation result and other reported physical
properties. It is shown that the electronic structure of CeRu4Sb12 becomes
similar to that of a narrow-gap semiconductor under external pressure.Comment: 8 pages, 9 figure
Revisiting the valence-band and core-level photoemission spectra of NiO
We have re-examined the valence-band (VB) and core-level electronic structure
of NiO by means of hard and soft x-ray photoemission spectroscopy (PES). The
spectral weight of the lowest energy state found to be enhanced in the bulk
sensitive Ni 2p core-level PES. A configuration-interaction model including the
bound state screening has shown significant agreement with the core-level
spectra, and the off and on-resonance VB spectra. These results identify the
lowest energy state in core-level and VB-PES as the Zhang-Rice doublet bound
state, consistent with the spin-fermion model and recent ab initio calculation
with dynamical mean-field theory (LDA + DMFT).Comment: 4 pages, 3 figure
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