Pressure Tuning of an Ionic Insulator into a Heavy Electron Metal: An Infrared Study of YbS

Optical conductivity [$\sigma(\omega)$] of YbS has been measured under pressure up to 20 GPa. Below 8 GPa, $\sigma(\omega)$ is low since YbS is an insulator with an energy gap between fully occupied 4$f$ state and unoccupied conduction ($c$) band. Above 8 GPa, however, $\sigma(\omega)$ increases dramatically, developing a Drude component due to heavy carriers and characteristic infrared peaks. It is shown that increasing pressure has caused an energy overlap and hybridization between the $c$ band and 4$f$ state, thus driving the initially ionic and insulating YbS into a correlated metal with heavy carriers

Metal-insulator transition in PrRu4_4P12_{12} and SmRu4_4P12_{12} investigated by optical spectroscopy

Electronic structures of the filled-skutterudite compounds PrRu$_4$P$_{12}$ and SmRu$_4$P$_{12}$, which undergo a metal-insulator transition (MIT) at $T_{\rm MI}$ = 60 K and 16 K, respectively, have been studied by means of optical spectroscopy. Their optical conductivity spectra develop an energy gap of $\sim$ 10 meV below $T_{\rm MI}$. The observed characteristics of the energy gap are qualitatively different from those of the Kondo semiconductors. In addition, optical phonon peaks in the spectra show anomalies upon the MIT, including broadening and shifts at $T_{\rm MI}$ and an appearance of new peaks below $T_{\rm MI}$. These results are discussed in terms of density waves or orbital ordering previously predicted for these compounds.Comment: 4pages, 4figures, submitted to Physical Review

Optical Conductivity and Electronic Structure of CeRu4Sb12 under High Pressure

Optical conductivity [s(w)] of Ce-filled skutterudite CeRu4Sb12 has been measured at high pressure to 8 GPa and at low temperature, to probe the pressure evolution of its electronic structures. At ambient pressure, a mid-infrared peak at 0.1 eV was formed in s(w) at low temperature, and the spectral weight below 0.1 eV was strongly suppressed, due to a hybridization of the f electron and conduction electron states. With increasing external pressure, the mid-infrared peak shifts to higher energy, and the spectral weight below the peak was further depleted. The obtained spectral data are analyzed in comparison with band calculation result and other reported physical properties. It is shown that the electronic structure of CeRu4Sb12 becomes similar to that of a narrow-gap semiconductor under external pressure.Comment: 8 pages, 9 figure

Revisiting the valence-band and core-level photoemission spectra of NiO

We have re-examined the valence-band (VB) and core-level electronic structure of NiO by means of hard and soft x-ray photoemission spectroscopy (PES). The spectral weight of the lowest energy state found to be enhanced in the bulk sensitive Ni 2p core-level PES. A configuration-interaction model including the bound state screening has shown significant agreement with the core-level spectra, and the off and on-resonance VB spectra. These results identify the lowest energy state in core-level and VB-PES as the Zhang-Rice doublet bound state, consistent with the spin-fermion model and recent ab initio calculation with dynamical mean-field theory (LDA + DMFT).Comment: 4 pages, 3 figure