Angular dependence of the tunneling anisotropic magnetoresistance in magnetic tunnel junctions

Based on general symmetry considerations we investigate how the dependence of the tunneling anisotropic magnetoresistance (TAMR) on the magnetization direction is determined by the specific form of the spin-orbit coupling field. By extending a phenomenological model, previously proposed for explaining the main trends of the TAMR in (001) ferromagnet/semiconductor/normal-metal magnetic tunnel junctions (MTJs) [J. Moser et al., Phys. Rev. Lett. 99, 056601 (2007)], we provide a unified qualitative description of the TAMR in MTJs with different growth directions. In particular, we predict the forms of the angular dependence of the TAMR in (001),(110), and (111) MTJs with structure inversion asymmetry and/or bulk inversion asymmetry. The effects of in-plane uniaxial strain on the TAMR are also investigated

Magnetoanisotropic Andreev Reflection in Ferromagnet/Superconductor Junctions

Andreev reflection spectroscopy of ferromagnet/superconductor (FS) junctions is an important probe of spin polarization. We theoretically investigate spin-polarized transport in FS junctions in the presence of Rashba and Dresselhaus interfacial spin-orbit fields and show that Andreev reflection can be controlled by changing the magnetization orientation. We predict a giant in- and out-of-plane magnetoanisotropy of the junction conductance. If the ferromagnet is highly spin polarized---in the half-metal limit---the magnetoanisotropic Andreev reflection depends universally on the spin-orbit fields only. Our results show that Andreev reflection spectroscopy can be used for sensitive probing of interfacial spin-orbit fields in FS junction.Comment: Pages 6-10 contain supplemental materia

Probing topological transitions in HgTe/CdTe quantum wells by magneto-optical measurements

In two-dimensional topological insulators, such as inverted HgTe/CdTe quantum wells, helical quantum spin Hall (QSH) states persist even at finite magnetic fields below a critical magnetic field $B_\mathrm{c}$, above which only quantum Hall (QH) states can be found. Using linear-response theory, we theoretically investigate the magneto-optical properties of inverted HgTe/CdTe quantum wells, both for infinite two-dimensional and finite-strip geometries, and possible signatures of the transition between the QSH and QH regimes. In the absorption spectrum, several peaks arise due to non-equidistant Landau levels in both regimes. However, in the QSH regime, we find an additional absorption peak at low energies in the finite-strip geometry. This peak arises due to the presence of edge states in this geometry and persists for any Fermi level in the QSH regime, while in the QH regime the peak vanishes if the Fermi level is situated in the bulk gap. Thus, by sweeping the gate voltage, it is possible to experimentally distinguish between the QSH and QH regimes due to this signature. Moreover, we investigate the effect of spin-orbit coupling and finite temperature on this measurement scheme.Comment: 14 pages, 13 figure

Proximitized Materials

Advances in scaling down heterostructures and having an improved interface quality together with atomically-thin two-dimensional materials suggest a novel approach to systematically design materials. A given material can be transformed through proximity effects whereby it acquires properties of its neighbors, for example, becoming superconducting, magnetic, topologically nontrivial, or with an enhanced spin-orbit coupling. Such proximity effects not only complement the conventional methods of designing materials by doping or functionalization, but can also overcome their various limitations. In proximitized materials it is possible to realize properties that are not present in any constituent region of the considered heterostructure. While the focus is on magnetic and spin-orbit proximity effects with their applications in spintronics, the outlined principles provide also a broader framework for employing other proximity effects to tailor materials and realize novel phenomena.Comment: Invited Review to appear in Materials Today, 28 pages, 22 figure

Tunneling anomalous and spin Hall effects

We predict, theoretically, the existence of the anomalous Hall effect when a tunneling current flows through a tunnel junction in which only one of the electrodes is magnetic. The interfacial spin-orbit coupling present in the barrier region induces a spin-dependent momentum filtering in the directions perpendicular to the tunneling current, resulting in a skew tunneling even in the absence of impurities. This produces an anomalous Hall conductance and spin Hall currents in the nonmagnetic electrode when a bias voltage is applied across the tunneling heterojunction. If the barrier is composed of a noncentrosymmetric material, the anomalous Hall conductance and spin Hall currents become anisotropic with respect to both the magnetization and crystallographic directions, allowing us to separate this interfacial phenomenon from the bulk anomalous and spin Hall contributions. The proposed effect should be useful for proving and quantifying the interfacial spin-orbit fields in metallic and metal-semiconductor systems