Two stage cracking of metallic bi layers on polymer substrates under tension

Cu Nb nanoscale metallic multilayers have been extensively investigated to understand how their mechanical behavior is influenced by the individual layer thickness. The general observed trend is that the yield stress of the multilayer increases with decreasing layer thickness. Important mechanical behaviors that have not been studied in depth are the fracture of these multilayers and adhesion energy between the multilayer films and their substrate. Here, the influences of the layer thickness, layer order, and initial residual stresses of Cu Nb multilayers on polyimide were examined using in situ x ray diffraction and confocal laser scanning microscopy under tensile loading. With these techniques, it was possible to calculate the stresses developing in the individual materials and measure buckles that could be used to evaluate the interfacial adhesion. Layer thickness, deposition order, and the initial residual stresses were not shown to influence the initial fracture strains of the Cu Nb multilayer systems under tensile loading conditions. However, the adhesion energy between the multilayer and substrate was affected by the layer deposition order and by the initial residual stresse

Evidence for charge localization in the ferromagnetic phase of La_(1-x)Ca_(x)MnO_3 from High real-space-resolution x-ray diffraction

High real-space-resolution atomic pair distribution functions of La_(1-x)Ca_(x)MnO_3 (x=0.12, 0.25 and 0.33) have been measured using high-energy x-ray powder diffraction to study the size and shape of the MnO_6 octahedron as a function of temperature and doping. In the paramagnetic insulating phase we find evidence for three distinct bond-lengths (~ 1.88, 1.95 and 2.15A) which we ascribe to Mn^{4+}-O, Mn^{3+}-O short and Mn^{3+}-O long bonds respectively. In the ferromagnetic metallic (FM) phase, for x=0.33 and T=20K, we find a single Mn-O bond-length; however, as the metal-insulator transition is approached either by increasing T or decreasing x, intensity progressively appears around r=2.15 and in the region 1.8 - 1.9A suggesting the appearance of Mn^{3+}-O long bonds and short Mn^{4+}-O bonds. This is strong evidence that charge localized and delocalized phases coexist close to the metal-insulator transition in the FM phase.Comment: 8 pages, 8 postscript figures, submitted to Phys. Rev.

Orbital ferromagnetism and anomalous Hall effect in antiferromagnets on distorted fcc lattice

The Berry phase due to the spin wavefunction gives rise to the orbital ferromagnetism and anomalous Hall effect in the non-coplanar antiferromagnetic ordered state on face centered cubic (fcc) lattice once the crystal is distorted perpendicular to (1,1,1) or (1,1,0)- plane. The relevance to the real systems $\gamma$-FeMn and NiS$_2$ is also discussed.Comment: 4 pages, 3 figure

Quantum Spin Pump in S=1/2 antiferromagnetic chains -Holonomy of phase operators in sine-Gordon theory-

In this paper, we propose the quantum spin pumping in quantum spin systems where an applied electric field ($E$) and magnetic field ($H$) cause a finite spin gap to its critical ground state. When these systems are subject to alternating electromangetic fields; $(E,H)=(\sin\frac{2\pi t}{T},\cos\frac{2\pi t}{T})$ and travel along the {\it{loop}} $\Gamma_{\rm{loop}}$ which encloses their critical ground state in this $E$-$H$ phase diagram, the locking potential in the sine-Gordon model slides and changes its minimum. As a result, the phase operator acquires $2\pi$ holonomy during one cycle along $\Gamma_{\rm{loop}}$, which means that the quantized spin current has been transported through the bulk systems during this adiabatic process. The relevance to real systems such as Cu-benzoate and ${\rm{Yb}}_4{\rm{As}}_3$ is also discussed.Comment: 10 pages, 5 figures, to be published in J. Phys. Soc. Jpn. 74 (2005) no. 4. Typos corrected in the revised versio

Large Anomalous Hall effect in a silicon-based magnetic semiconductor

Magnetic semiconductors are attracting high interest because of their potential use for spintronics, a new technology which merges electronics and manipulation of conduction electron spins. (GaMn)As and (GaMn)N have recently emerged as the most popular materials for this new technology. While Curie temperatures are rising towards room temperature, these materials can only be fabricated in thin film form, are heavily defective, and are not obviously compatible with Si. We show here that it is productive to consider transition metal monosilicides as potential alternatives. In particular, we report the discovery that the bulk metallic magnets derived from doping the narrow gap insulator FeSi with Co share the very high anomalous Hall conductance of (GaMn)As, while displaying Curie temperatures as high as 53 K. Our work opens up a new arena for spintronics, involving a bulk material based only on transition metals and Si, and which we have proven to display a variety of large magnetic field effects on easily measured electrical properties.Comment: 19 pages with 5 figure

Charge Transport in Manganites: Hopping Conduction, the Anomalous Hall Effect and Universal Scaling

The low-temperature Hall resistivity \rho_{xy} of La_{2/3}A_{1/3}MnO_3 single crystals (where A stands for Ca, Pb and Ca, or Sr) can be separated into Ordinary and Anomalous contributions, giving rise to Ordinary and Anomalous Hall effects, respectively. However, no such decomposition is possible near the Curie temperature which, in these systems, is close to metal-to-insulator transition. Rather, for all of these compounds and to a good approximation, the \rho_{xy} data at various temperatures and magnetic fields collapse (up to an overall scale), on to a single function of the reduced magnetization m=M/M_{sat}, the extremum of this function lying at m~0.4. A new mechanism for the Anomalous Hall Effect in the inelastic hopping regime, which reproduces these scaling curves, is identified. This mechanism, which is an extension of Holstein's model for the Ordinary Hall effect in the hopping regime, arises from the combined effects of the double-exchange-induced quantal phase in triads of Mn ions and spin-orbit interactions. We identify processes that lead to the Anomalous Hall Effect for localized carriers and, along the way, analyze issues of quantum interference in the presence of phonon-assisted hopping. Our results suggest that, near the ferromagnet-to-paramagnet transition, it is appropriate to describe transport in manganites in terms of carrier hopping between states that are localized due to combined effect of magnetic and non-magnetic disorder. We attribute the qualitative variations in resistivity characteristics across manganite compounds to the differing strengths of their carrier self-trapping, and conclude that both disorder-induced localization and self-trapping effects are important for transport.Comment: 29 pages, 20 figure