Reconfigurable Intelligent Surface (RIS) Design for 5G N260 Frequency Band

In This Paper, a New Low Profile Reconfigurable Intelligent Surface Design with High Resolution Steering Reflector and Wide Frequency Band Width is Proposed at N260 Frequency Band, Used for 5G New Radio Applications. the Dynamic Reflection Phase and Tunability is Realized by Integrating of Varactor Diode with Each Unit Cell. This Study Presents Design Procedures, Reflection Simulation Verifications, and the Effects of Important Parameters on the Performance of the Proposed Novel Resonant Unit Cell. the Proposed Unit Cell Offers a Dynamic Reflection Phase Range of More Than 270° at a Wide Frequency Bandwidth. Simulation Results of Beam Steering Capability in Horizontal Plane at 38 GHz is Presented to Verify the Design Performance of the RIS

High-Speed Differential Via Optimization using a High-Accuracy and High-Bandwidth Via Model

A Physics-Based Equivalent Model of the High-Speed Differential Via Pair with High Accuracy and High Bandwidth is Proposed for the First Time. the Proposed Physics-Based Equivalent Circuit Model of the Differential Via Pair Includes the Effect of Adjacent Ground (GND) Vias. the Proposed Model is Verified using 3D Full-Wave Numerical Simulation Results. in Addition, the Change in Electrical Performance Due to Change in Anti-Pad Radius, the Via Pitch and the GND-Via-To-Differential-Via Distance is Analyzed. based on the Analysis, Electrical Performance of Differential Via Pair Can Be Accurately and Rapidly Optimized with Respect to Design Parameters, such as the Via Pitch, the Anti-Pad Radius and the GND-Via-To-Differential-Via Distance using the Proposed Model, to Provide Pre-Layout Design Guide for High-Speed Channel Designers. by using the Proposed High-Accuracy and High-Bandwidth Physics-Based Via Model, the Via Optimization Time Can Be Drastically Reduced with High Accuracy

Mode-Decomposition-Based Equivalent Via (MEV) Model and MEV Model Application Range Analysis

The Mode-Decomposition-Based Equivalent Via (MEV) Model is Proposed in This Paper, which is a Physics-Based Equivalent Model for the High-Speed Channel Modeling. the Application Ranges of the MEV Model Are Analyzed by Varying Anti-Pad Radius, Via Radius, and Distance between the Parallel Plates for a Single Via with Multiple Layers. based on the S-Parameter Comparison with Full-Wave Simulations, the MEV Model is Useful for the Insertion Loss Calculation Up to 100 GHz. Meanwhile, the Return Loss from the MEV Model Shows a High Level of Correlation with Full-Wave Simulation Results Up to 70GHz, Even When the Anti-Pad Radius is Larger Than the Commonly Used Size. the Parallel-Plate Height Has a Negligible Impact on the Accuracy of the MEV Model. This Paper Demonstrates the Large Application Range of the MEV Model and Verifies that MEV Model is Suitable for Practical High-Speed Via Analysis

Monte Carlo Particle Simulation of Avalanche Breakdown in a Reverse Biased Diode with Full Band Structure

To model the avalanche breakdown of a voltage regulator diode under reverse bias, a computationally rigorous device physics model using the Monte Carlo method to solve charge carrier Boltzmann transport equations (BTEs) is proposed. The transport of energetic charge carriers is calculated by using the full energy band instead of the non-parabolic band structure. The position-dependent doping profile found in real diodes is modeled accurately and time-efficiently. A two-step method is introduced to accelerate the simulation of avalanche breakdown. With the proposed model, the expected IV characteristics of a voltage regulator diode under reverse bias are simulated. The transport of charge carriers and avalanche breakdown are modeled at the microscopic level, and the simulation results are verified through comparison with the IV characteristics from the datasheet. This model can be used to analyze device susceptibility to electrical stress, providing a graphical visualization for failure mechanisms

Simplified Equivalent Golden Finger Port Setup for Fast and Accurate High-Speed Channel Simulation

A Simplified Equivalent Golden Finger Port Setup is Proposed for Efficient, Accurate 3D Full-Wave Simulation for High-Speed Channels. the Bent Connector Pins, Which Mate with the Golden Finger, Are Simplified as Equivalent Cylindrical Pins to Meet the Wave Port Setting Requirements for 3D Full-Wave Simulation. the Effects of the Equivalent Cylindrical Pin Location and Diameter Are Analyzed through 3D Full-Wave Simulation. a Closed-Form Expression is Newly Proposed to Correlate the Location and Diameter of the Equivalent Cylindrical Pin with Respect to the Widely Used Bent Connector Pin. on the Basis of the Closed-Form Expression, the Bent Connector Pin Can Be Accurately Replaced by the Simplified Equivalent Cylindrical Pin Structure in 3D Full-Wave Simulation. Practical Examples using Commercial High-Speed Connector Pin Models with Gold Fingers Verify that the Proposed Modeling Method is Accurate and Efficient Up to 40 GHz