8 research outputs found

    Effect of thermal annealing on dielectric and ferroelectric properties of aerosol-deposited 0.65Pb(Mg1/3Nb2/3)O3−0.35PbTiO30.65\text{Pb}(\text{Mg}_{1/3}\text{Nb}_{2/3})\text{O}_{3}-0.35\text{PbTiO}_{3} thick films

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    In this work, the effects of thermal annealing at 500 {\deg}C on aerosol-deposited 0.65Pb(Mg1/3Nb2/3)O3−0.35PbTiO30.65\text{Pb}(\text{Mg}_{1/3}\text{Nb}_{2/3})\text{O}_{3}-0.35\text{PbTiO}_{3} thick films on stainless-steel substrates are investigated using two complementary methods at high and low applied external electric fields. The first one is Positive Up Negative Down method, which allows us to obtain information about the switching and non-switching contributions to the polarization. It shows that the as-deposited film is ferroelectric before annealing, since it has a switching contribution to the polarization. After annealing, both the switching and non-switching contributions to polarization increased by a factor of 1.6 and 2.33, respectively, indicating stronger ferroelectric behavior. The second method is based on impedance spectroscopy coupled with Rayleigh analysis. The results show that post-deposition thermal annealing increases the reversible domain wall contribution to the dielectric permittivity by a factor 11 while keeping the threshold field similar. This indicates, after annealing, domain wall density is larger while domain wall mobility remains similar. These two complementary characterization methods show that annealing increases the ferroelectric behavior of the thick film by increasing the domain wall density and its influence is visible both on polarization versus electric field loop and dielectric permittivity

    Investigating the Feasibility of Preparing Metal–Ceramic Multi-Layered Composites Using Only the Aerosol-Deposition Technique

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    The preparation of metal–ceramic layered composites remains a challenge due to the incompatibilities of the materials at the high temperatures of the co-firing process. For densification, the ceramic thick-film materials must be subjected to high-temperature annealing (usually above 900 °C), which can increase the production costs and limit the use of substrate or co-sintering materials with a low oxidation resistance and a low melting point, such as metals. To overcome these problems, the feasibility of preparing dense, defect-free, metal–ceramic multilayers with a room-temperature-based method should be investigated. In this study, we have shown that the preparation of ceramic–metal Al2O3/Al/Al2O3/Gd multilayers using aerosol deposition (AD) is feasible and represents a simple, reliable and cost-effective approach to substrate functionalisation and protection. Scanning electron microscopy of the multilayers showed that all the layers have a dense, defect-free microstructure and good intra-layer connectivity. The top Al2O3 dielectric layer provides excellent electrical resistance (i.e., 7.7 × 1012 Ω∙m), which is required for reliable electric field applications

    Effect of thermal annealing on dielectric and ferroelectric properties of aerosol-deposited 0.65Pb(Mg1/3Nb2/3)O3-0.35 PbTiO3 thick films

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    International audienceIn this work, the effects of thermal annealing at 500°C on aerosol-deposited 0.65Pb(Mg1/3Nb2/3)O 3-0.35PbTiO 3 thick films on stainless-steel substrates are investigated using two complementary methods at high and low applied external electric fields. The first one is Positive Up Negative Down method, which allows us to obtain information about the switching and non-switching contributions to the polarization. It shows that the as-deposited film is ferroelectric before annealing, since it has a switching contribution to the polarization. After annealing, both the switching and non-switching contributions to polarization increased by a factor of 1.6 and 2.33, respectively, indicating stronger ferroelectric behavior. The second method is based on impedance spectroscopy coupled with Rayleigh analysis. The results show that post-deposition thermal annealing increases the reversible domain wall contribution to the dielectric permittivity by a factor 11 while keeping the threshold field similar. This indicates, after annealing, domain wall density is larger while domain wall mobility remains similar. These two complementary characterization methods show that annealing increases the ferroelectric behavior of the thick film by increasing the domain wall density and its influence is visible both on polarization versus electric field loop and dielectric permittivity

    Construction and Functionality of a Ceramic Resonant Pressure Sensor for Operation at Elevated Temperatures

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    Piezoelectric ceramic resonant pressure sensors have shown potential as sensing elements for harsh environments, such as elevated temperatures. For operating temperatures exceeding ~250 °C, conventional and widely used Pb(Zr,Ti)O3 (PZT) piezoelectrics should be replaced. Here, a ceramic pressure sensor from low-temperature co-fired ceramics (LTCC) was constructed by integrating a piezoelectric actuator made from bismuth ferrite (BiFeO3) on a diaphragm. This ferroelectric material was selected because of its high Curie temperature (TC = 825 °C) and as a lead-free piezoelectric extensively investigated for high-temperature applications. In order to construct a sensor with suitable pressure sensitivity, numerical simulations were used to define the optimum construction dimensions. The functionality of the pressure sensor was tested up to 201 °C. The measurements confirmed a pressure sensitivity, i.e., resonance frequency shift of the sensor per unit of pressure, of −8.7 Hz/kPa up to 171 °C. It was suggested that the main reason for the hindered operation at the elevated temperatures could lie in the thermo-mechanical properties of the diaphragm and the adhesive bonding at the actuator-diaphragm interconnection

    Multifunctional energy storage and piezoelectric properties of 0.65Pb(Mg<sub>1/3</sub>Nb<sub>2/3</sub>)O<sub>3</sub>–0.35PbTiO<sub>3</sub> thick films on stainless-steel substrates

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    Abstract The miniaturization of electronic devices and power systems requires the fabrication of functional components in the form of micrometer-sized thick films. A major challenge is the integration of functional ceramics with metals, which are considered incompatible with high-temperature ceramic processing. To overcome the integration barrier, an aerosol deposition (AD) spray-coating method based on room temperature deposition can be used. By employing the AD method, we were able to deposit relaxor-ferroelectric 0.65Pb(Mg1/3Nb2/3)O3–0.35PbTiO3 ceramic thick films on low-cost stainless-steel substrates. The as-deposited films were dense, with ∼97% of the theoretical density. Moreover, the post-deposition annealing at 500 °C did not result in any microstructural changes. Compared to the as-deposited films, the annealed films exhibit improved energy storage and electromechanical properties. The annealed thick films achieve a recoverable energy density of 15.1 J⋅cm−3 at an electric field of 1350 kV⋅cm−1 and an electric-field cycling stability of 5 million cycles. A piezoelectric response was detected through the entire film thickness by piezoelectric force microscopy. Macroscopic displacement measurements revealed a maximum relative strain of 0.38% at 1000 kV⋅cm−1, corresponding to inverse effective piezoelectric coefficient of ∼40 pm⋅V−1. In this study, we overcame the integration challenges and demonstrated the multifunctionalization of future ceramic-metal structures, as the deposited thick films on stainless steel exhibit energy storage capability and piezoelectric properties.</jats:p

    Self-Poling of BiFeO<sub>3</sub> Thick Films

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    Bismuth ferrite (BiFeO<sub>3</sub>) is difficult to pole because of the combination of its high coercive field and high electrical conductivity. This problem is particularly pronounced in thick films. The poling, however, must be performed to achieve a large macroscopic piezoelectric response. This study presents evidence of a prominent and reproducible self-poling effect in few-tens-of-micrometer-thick BiFeO<sub>3</sub> films. Direct and converse piezoelectric measurements confirmed that the as-sintered BiFeO<sub>3</sub> thick films yield <i>d</i><sub>33</sub> values of up to ∼20 pC/N. It was observed that a significant self-poling effect only appears in cases when the films are heated and cooled through the ferroelectric-paraelectric phase transition (Curie temperature <i>T</i><sub>C</sub> ∼ 820 °C). These self-poled films exhibit a microstructure with randomly oriented columnar grains. The presence of a compressive strain gradient across the film thickness cooled from above the <i>T</i><sub>C</sub> was experimentally confirmed and is suggested to be responsible for the self-poling effect. Finally, the macroscopic <i>d</i><sub>33</sub> response of the self-poled BiFeO<sub>3</sub> film was characterized as a function of the driving-field frequency and amplitude
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