CORE
πΊπ¦Β
Β make metadata, not war
Services
Services overview
Explore all CORE services
Access to raw data
API
Dataset
FastSync
Content discovery
Recommender
Discovery
OAI identifiers
OAI Resolver
Managing content
Dashboard
Bespoke contracts
Consultancy services
Support us
Support us
Membership
Sponsorship
Community governance
Advisory Board
Board of supporters
Research network
About
About us
Our mission
Team
Blog
FAQs
Contact us
Effect of thermal annealing on dielectric and ferroelectric properties of aerosol-deposited
0.65
Pb
(
Mg
1
/
3
Nb
2
/
3
)
O
3
β
0.35
PbTiO
3
0.65\text{Pb}(\text{Mg}_{1/3}\text{Nb}_{2/3})\text{O}_{3}-0.35\text{PbTiO}_{3}
0.65
Pb
(
Mg
1/3
β
Nb
2/3
β
)
O
3
β
β
0.35
PbTiO
3
β
thick films
Authors
Micka Bah
Franck Levassort
+3Β more
Kevin Nadaud
Matej Sadl
Hana Ursic
Publication date
27 October 2023
Publisher
View
on
arXiv
Abstract
In this work, the effects of thermal annealing at 500 {\deg}C on aerosol-deposited
0.65
Pb
(
Mg
1
/
3
Nb
2
/
3
)
O
3
β
0.35
PbTiO
3
0.65\text{Pb}(\text{Mg}_{1/3}\text{Nb}_{2/3})\text{O}_{3}-0.35\text{PbTiO}_{3}
0.65
Pb
(
Mg
1/3
β
Nb
2/3
β
)
O
3
β
β
0.35
PbTiO
3
β
thick films on stainless-steel substrates are investigated using two complementary methods at high and low applied external electric fields. The first one is Positive Up Negative Down method, which allows us to obtain information about the switching and non-switching contributions to the polarization. It shows that the as-deposited film is ferroelectric before annealing, since it has a switching contribution to the polarization. After annealing, both the switching and non-switching contributions to polarization increased by a factor of 1.6 and 2.33, respectively, indicating stronger ferroelectric behavior. The second method is based on impedance spectroscopy coupled with Rayleigh analysis. The results show that post-deposition thermal annealing increases the reversible domain wall contribution to the dielectric permittivity by a factor 11 while keeping the threshold field similar. This indicates, after annealing, domain wall density is larger while domain wall mobility remains similar. These two complementary characterization methods show that annealing increases the ferroelectric behavior of the thick film by increasing the domain wall density and its influence is visible both on polarization versus electric field loop and dielectric permittivity
Similar works
Full text
Available Versions
arXiv.org e-Print Archive
See this paper in CORE
Go to the repository landing page
Download from data provider
oai:arXiv.org:2310.18005
Last time updated on 18/01/2024