80-Gb/s OTDM system analysis of a vertical microcavity-based saturable absorber for the enhancement of pulse pedestal suppression

In future high-speed optical time-division-multiplexed (OTDM) systems, an important factor that needs to be considered for optical pulse generation schemes is the impact of pulse pedestals on the overall system performance. The results presented in this letter are two-fold; first, the impact due to the height of pulse pedestals in an 80-Gb/s OTDM system are established. Second, a solution is provided to overcome these high pedestal levels through the use of a vertical microcavity saturable absorber, which can significantly reduce the pulse pedestal level and give enhanced system performanc

Thermal and optical characterization of micro-LED probes for in vivo optogenetic neural stimulation

Within optogenetics there is a need for compact light sources that are capable of delivering light with excellent spatial, temporal, and spectral resolution to deep brain structures. Here, we demonstrate a custom GaN-based LED probe for such applications and the electrical, optical, and thermal properties are analyzed. The output power density and emission spectrum were found to be suitable for stimulating channelrhodopsin-2, one of the most common light-sensitive proteins currently used in optogenetics. The LED device produced high light intensities, far in excess of those required to stimulate the light-sensitive proteins within the neurons. Thermal performance was also investigated, illustrating that a broad range of operating regimes in pulsed mode are accessible while keeping a minimum increase in temperature for the brain (0.5°C). This type of custom device represents a significant step forward for the optogenetics community, allowing multiple bright excitation sites along the length of a minimally invasive neural probe

Active-matrix GaN micro light-emitting diode display with unprecedented brightness

Displays based on microsized gallium nitride light-emitting diodes possess extraordinary brightness. It is demonstrated here both theoretically and experimentally that the layout of the n-contact in these devices is important for the best device performance. We highlight, in particular, the significance of a nonthermal increase of differential resistance upon multipixel operation. These findings underpin the realization of a blue microdisplay with a luminance of 10⁶ cd/m²

Fabrication and characterisation of microscale air bridges in conductive gallium nitride

Abstract Fabrication and electrical characterisation of microscale air bridges consisting of GaN heavily doped with silicon is described. These were made from GaN-AlInNGaN epitaxial trilayers on sapphire substrates, in which the AlInN was close to the composition lattice matched to GaN at ∼17% InN fraction. The start of the fabrication sequence used inductively coupled plasma etching with chlorine chemistry to define mesas. In situ monitoring by laser reflectometry indicated an AlInN vertical etch rate of 400 nm/minute, ∼70% of the etch rate of GaN. Processing was completed by lateral wet etching of the AlInN in hot nitric acid to leave GaN microbridges supported between anchor posts at both ends. Deposition of Ti-Au contact pads onto the anchor posts allowed study of the electrical characteristics. At low applied voltages, vertical conduction through the undoped AlInN layers was minimal in comparison with the current path through the Si:GaN bridges. Typical structures showed highly linear currentvoltage characteristics at low applied voltages, and had resistances of 1050 . The observed resistance values are compared with the predicted value based on materials parameters and an idealised geometry. The microbridges showed damage from Joule heating only at current densities above 2 × 10 5 A cm −2

Individually addressable AlInGaN micro-LED arrays with CMOS control and subnanosecond output pulses

We report the fabrication and characterization of an ultraviolet (370 nm) emitting AlInGaN-based micro-light- emitting diode (micro-LED) array integrated with complementary metal-oxide-semiconductor control electronics. This configuration allows an 8 × 8 array of micro-LED pixels, each of 72-mum diameter, to be individually addressed. The micro-LED pixels can be driven in direct current (dc), square wave, or pulsed operation, with linear feedback shift registers (LFSRs) allowing the output of the micro-LED pixels to mimic that of an optical data transmitter. We present the optical output power versus drive current characteristics of an individual pixel, which show a micro-LED output power of up to 570 muW in dc operation. Representative optical pulse trains demonstrating the micro-LEDs driven in square wave and LFSR modes, and controlled optical pulsewidths from 300 ps to 40 ns are also presented

Fabrication and characterisation of microscale air bridges in conductive gallium nitride

Fabrication and electrical characterisation of microscale air bridges consisting of GaN heavily doped with silicon is described. These were made from GaN-AlInN-GaN epitaxial trilayers on sapphire substrates, in which the AlInN was close to the composition lattice matched to GaN at ∼17% InN fraction. The start of the fabrication sequence used inductively coupled plasma etching with chlorine chemistry to define mesas. In situ monitoring by laser reflectometry indicated an AlInN vertical etch rate of 400 nm/minute, ∼70% of the etch rate of GaN. Processing was completed by lateral wet etching of the AlInN in hot nitric acid to leave GaN microbridges supported between anchor posts at both ends. Deposition of Ti-Au contact pads onto the anchor posts allowed study of the electrical characteristics. At low applied voltages, vertical conduction through the undoped AlInN layers was minimal in comparison with the current path through the Si:GaN bridges. Typical structures showed highly linear current-voltage characteristics at low applied voltages, and had resistances of 1050 Ω. The observed resistance values are compared with the predicted value based on materials parameters and an idealised geometry. The microbridges showed damage from Joule heating only at current densities above 2×105 A cm−2

Nanofabrication of gallium nitride photonic crystal light-emitting diodes

We describe a comparison of nanofabrication technologies for the fabrication of 2D photonic crystal structures on GaN/InGaN blue LEDs. Such devices exhibit enhanced brightness and the possibility of controlling the angular emission profile of emitted light. This paper describes three nano lithography techniques for patterning photonic crystal structures on the emitting faces of LEDs: direct-write electron beam lithography, hard stamp nanoimprint lithography and soft-stamp nanoimprint lithography with disposable embossing masters. In each case we describe variations on the technique as well as its advantages and disadvantages. Complete process details have been given for all three techniques. In addition, we show how high performance GaN dry etch techniques, coupled with optical process monitoring can transfer resist patterns into underlying GaN material with high fidelit

Micro-pixellated flip-chip inGaN and allnGaN light emitting diodes

Flip-chip GaN-based micro-LED arrays have been fabricated consisting of 256 (16 x 16) micropixels, each of diameter 72μm. Output characteristics are compared to broad-area reference LED devices fabricated from the same wafers

All-optical regeneration at 160-bit/s using a saturable absorber vertical microcavity

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