Spatial effects of Fano resonance in local tunneling conductivity in vicinity of impurity on semiconductor surface

We present the results of local tunneling conductivity spatial distribution detailed theoretical investigations in vicinity of impurity atom for a wide range of applied bias voltage. We observed Fano resonance in tunneling conductivity resulting from interference between resonant tunneling channel through impurity energy level and direct tunneling channel between the tunneling contact leads. We have found that interference between tunneling channels strongly modifies form of tunneling conductivity measured by the scanning tunneling microscopy/spectroscopy (STM/STS) depending on the distance value from the impurity.Comment: 4 pages, 3 figure

On strictly Deza graphs with parameters (n,k,k-1,a)

A nonempty $k$-regular graph $\Gamma$ on $n$ vertices is called a Deza graph if there exist constants $b$ and $a$ $(b \geq a)$ such that any pair of distinct vertices of $\Gamma$ has precisely either $b$ or $a$ common neighbours. The quantities $n$, $k$, $b$, and $a$ are called the parameters of $\Gamma$ and are written as the quadruple $(n,k,b,a)$. If a Deza graph has diameter 2 and is not strongly regular, then it is called a strictly Deza graph. In the paper we investigate strictly Deza graphs with parameters $(n, k, b, a)$, where its quantities satisfy the conditions $k = b + 1$ and $\frac{k(k - 1) - a(n - 1)}{b - a} > 1$.Comment: Any comments or suggestions are very welcom

Central limit theorems for the real eigenvalues of large Gaussian random matrices

Let G be an N×N real matrix whose entries are independent identically distributed standard normal random variables Gij∼N(0,1). The eigenvalues of such matrices are known to form a two-component system consisting of purely real and complex conjugated points. The purpose of this paper is to show that by appropriately adapting the methods of [E. Kanzieper, M. Poplavskyi, C. Timm, R. Tribe and O. Zaboronski, Annals of Applied Probability 26(5) (2016) 2733–2753], we can prove a central limit theorem of the following form: if λ1,…,λNR are the real eigenvalues of G, then for any even polynomial function P(x) and even N=2n, we have the convergence in distribution to a normal random variable 1E(NR)−−−−−√⎛⎝∑j=1NRP(λj/2n−−√)−E∑j=1NRP(λj/2n−−√)⎞⎠→N(0,σ2(P)) as n→∞, where σ2(P)=2−2√2∫1−1P(x)2dx

Tuning of tunneling current noise spectra singularities by localized states charging

We report the results of theoretical investigations of tunneling current noise spectra in a wide range of applied bias voltage. Localized states of individual impurity atoms play an important role in tunneling current noise formation. It was found that switching "on" and "off" of Coulomb interaction of conduction electrons with two charged localized states results in power law singularity of low-frequency tunneling current noise spectrum ($1/f^{\alpha}$) and also results on high frequency component of tunneling current spectra (singular peaks appear).Comment: 7 pages, 4 figure

Correlation induced switching of local spatial charge distribution in two-level system

We present theoretical investigation of spatial charge distribution in the two-level system with strong Coulomb correlations by means of Heisenberg equations analysis for localized states total electron filling numbers taking into account pair correlations of local electron density. It was found that tunneling current through nanometer scale structure with strongly coupled localized states causes Coulomb correlations induced spatial redistribution of localized charges. Conditions for inverse occupation of two-level system in particular range of applied bias caused by Coulomb correlations have been revealed. We also discuss possibility of charge manipulation in the proposed system.Comment: 6 pages, 4 figures Submitted to JETP Letter

Correlations between zeros of a random polynomial

We obtain exact analytical expressions for correlations between real zeros of the Kac random polynomial. We show that the zeros in the interval $(-1,1)$ are asymptotically independent of the zeros outside of this interval, and that the straightened zeros have the same limit translation invariant correlations. Then we calculate the correlations between the straightened zeros of the SO(2) random polynomial.Comment: 31 pages, 2 figures; a revised version of the J. Stat. Phys. pape

Scanning tunneling microscopy and spectroscopy at low temperatures of the (110) surface of Te doped GaAs single crystals

We have performed voltage dependent imaging and spatially resolved spectroscopy on the (110) surface of Te doped GaAs single crystals with a low temperature scanning tunneling microscope (STM). A large fraction of the observed defects are identified as Te dopant atoms which can be observed down to the fifth subsurface layer. For negative sample voltages, the dopant atoms are surrounded by Friedel charge density oscillations. Spatially resolved spectroscopy above the dopant atoms and above defect free areas of the GaAs (110) surface reveals the presence of conductance peaks inside the semiconductor band gap. The appearance of the peaks can be linked to charges residing on states which are localized within the tunnel junction area. We show that these localized states can be present on the doped GaAs surface as well as at the STM tip apex.Comment: 8 pages, 8 figures, accepted for publication in PR

Assessment of fire blight resistance in apple clonal rootstocks using molecular markers

Background. Clonal apple rootstocks are one of the main components of intensive gardening. The degree of rootstock damage by fire blight affects the resistance of the variety–rootstock combination. The paper presents a study on marking quantitative trait loci (QTL) of resistance to fire blight Erwinia amylovora in clonal apple rootstock.Materials and methods. A collection of 20 rootstock forms was analyzed. For the study, SCAR markers GE-8019, AE10-375 and microsatellite marker CH-F7-FB1 were used.Results. Polymorphism was observed for all three markers, and their various combinations in one genotype were revealed. It was previously noted that genotypes that carry all three markers were more resistant than those that lack them. The presence of all three markers was observed only in forms 62-396 (В10), 16-1 and 2-9-102. The other genotypes did not have the GE8019 marker. The AE10-375 marker was identified in eight clonal rootstocks. Microsatellite marker CH-F7-FB1 was present in all tested rootstocks. However, polymorphism was detected there. Most genotypes had a 174 bp fragment, but a 210 bp fragment was identified in two of the 20 forms. Clonal rootstock 70-20-21 proved heterozygous for this marker. The analyzed collection also included samples that had only the microsatellite marker: G16, Malysh Budagovskogo, Paradizka Budagovskogo (B9), 54-118 (В118), 57-491, 70-20-20 (В119), 70-20-21, 71-7-22, 76-3-6, 83-1-15, 87-7-12, and 2-12-10. The study of rootstock forms on the basis of resistance to metabolites of the fire blight pathogen was carried out under laboratory conditions using the E. amylovora culture filtrate in vitro on leaf explants. Most of the studied genotypes had different combinations of markers. However, the experiments showed that forms 62-396 and 14-1 with two out of three markers (AE10-375 and CH-F7-FB1) phenotypically manifested the trait of resistance to metabolites of E. amylovora

Results of a study on the stress-strain behavior of the cornea in polarized light under conditions of visual work

Background: Near visual work causes redistribution of internal stresses in the cornea, leading to a change in the shape and parameters of the interference patterns observed on the cornea in polarized light. Purpose: To assess the effect of various types of visual load on the extraocular muscles (EOM) in children and adolescents on the basis of characteristics of the interference patterns observed on the cornea in polarized light. Material and Methods: The interference patterns observed on the cornea in polarized light were studied in children and adolescents before and after they performed a visual load task which consisted in either working with texts printed on paper at different parameters of convenience for reading (97 individuals) or playing Tetris on a smartphone (58 adolescents). A symmetry coefficient K was calculated for the quantitative assessment of changes in interference pattern parameters induced by visual load. Results: Performing a visual load task which consisted in working with texts printed on paper resulted in a significant increase in asymmetry between the actions of the EOM in 60% to 73% of children; this was indicated by the values of a symmetry coefficient K which were twofold to six-fold higher than normal. Performing a visual load task which consisted in playing Tetris on a smartphone resulted in an increase in asymmetry between the actions of the EOM in 64% of adolescents. Conclusion: Our research confirmed that studies on the stress-strain behavior of the cornea in polarized light are promising for assessing the effect of various types of visual load on the function of EOM