Spatial distribution of local density of states in vicinity of impurity on semiconductor surface

We present the results of detailed theoretical investigations of changes in local density of total electronic surface states in 2D anisotropic atomic semiconductor lattice in vicinity of impurity atom for a wide range of applied bias voltage. We have found that taking into account changes in density of continuous spectrum states leads to the formation of a downfall at the particular value of applied voltage when we are interested in the density of states above the impurity atom or even to a series of downfalls for the fixed value of the distance from the impurity. The behaviour of local density of states with increasing of the distance from impurity along the chain differs from behaviour in the direction perpendicular to the chain.Comment: 6 pages, 5 figure

Russia — Germany Humanitarian Cooperation: Opportunities and Limitations Under the “Traffic Light” Coalition in Germany

Благодарности: выражаю благодарность своему научному руководителю, профессору Лебедевой Марине Михайловне за неизменную поддержку в исследовательском и творческом поиске.Acknowledgments: I would like to express my gratitude to my academic supervisor, Professor Marina M. Lebedeva for her constant support in research and creative searching.Выборы 2021 г. в Германии привели к смене правительства и формированию трехпартийной коалиции. В свете произошедших перестановок в германском внешнеполитическом истеблишменте, актуальность приобретает вопрос о возможных сдвигах в российскогерманских отношениях. Целью настоящей работы является анализ перспектив развития сотрудничества между Россией и ФРГ по комплексу гуманитарных вопросов.The 2021 elections in Germany led to a government change and the formation of a three-party coalition. In the light of the foreign policy changes in Germany, it is of high importance to foresee the possible shifts in Russian-German relations. This paper aims at analyzing the prospects for Russian-German humanitarian cooperation

Correlation induced switching of local spatial charge distribution in two-level system

We present theoretical investigation of spatial charge distribution in the two-level system with strong Coulomb correlations by means of Heisenberg equations analysis for localized states total electron filling numbers taking into account pair correlations of local electron density. It was found that tunneling current through nanometer scale structure with strongly coupled localized states causes Coulomb correlations induced spatial redistribution of localized charges. Conditions for inverse occupation of two-level system in particular range of applied bias caused by Coulomb correlations have been revealed. We also discuss possibility of charge manipulation in the proposed system.Comment: 6 pages, 4 figures Submitted to JETP Letter

Approaches to the construction of simulation model of the process optimization of rare plants microclonal propagation

The authors present approaches to constructing an imitation model for the optimization of the process of rare plants microclonal reproduction (on the example of the Belgorod region), which allow to identify the most effective ways of explants sterilization, to define the optimal composition of nutrient media for regenerants growth (tube plants) and growth regulators (phytohormones) for propagation of mini-plant

Oral corticosteroid (OCS) risk predictor for Type II Diabetes in asthma

Peer reviewedPostprin

Low-temperature scanning tunneling microscopy of ring-like surface electronic structures around Co islands on InAs(110) surfaces

We report on the experimental observation by scanning tunneling microscopy at low temperature of ring-like features that appear around Co metal clusters deposited on a clean (110) oriented surface of cleaved p-type InAs crystals. These features are visible in spectroscopic images within a certain range of negative tunneling bias voltages due to the presence of a negative differential conductance in the current-voltage dependence. A theoretical model is introduced, which takes into account non-equilibrium effects in the small tunneling junction area. In the framework of this model the appearance of the ring-like features is explained in terms of interference effects between electrons tunneling directly and indirectly (via a Co island) between the tip and the InAs surface.Comment: 8 pages, 4 figure

Historical phenomenon of ‘role reversal’ psychological aspect of the gender identity in history

© 2015, Ecozone, OAIMDD. All rights reserved. The article studies the historical phenomenon of the change of gender identity by means of studying the life of the Russian female officer N.A. Durova, who took part in Patriotic War of 1812. The existential crisis situation of her childhood has become the dominant idea of N.A. Durova’s life, who has overcome the conflict, the gender role reversal, acceptance of the male identity. It has become the sense-making factor of her life, provided her professional success and military career

Scanning tunneling microscopy and spectroscopy at low temperatures of the (110) surface of Te doped GaAs single crystals

We have performed voltage dependent imaging and spatially resolved spectroscopy on the (110) surface of Te doped GaAs single crystals with a low temperature scanning tunneling microscope (STM). A large fraction of the observed defects are identified as Te dopant atoms which can be observed down to the fifth subsurface layer. For negative sample voltages, the dopant atoms are surrounded by Friedel charge density oscillations. Spatially resolved spectroscopy above the dopant atoms and above defect free areas of the GaAs (110) surface reveals the presence of conductance peaks inside the semiconductor band gap. The appearance of the peaks can be linked to charges residing on states which are localized within the tunnel junction area. We show that these localized states can be present on the doped GaAs surface as well as at the STM tip apex.Comment: 8 pages, 8 figures, accepted for publication in PR

ANALYSIS OF THE BASE OF CURRENT STANDARDSFOR THE METALLURGICAL INDUSTRY

This article discusses the classification of standards in metallurgy, the distribution of standards in various groups of Section 77 - Metallurgy of the All-Russian classifier of standards. The distribution of standards from section 77 - Metallurgy by time intervals of adoption of standards is analyzed.В настоящей статье рассмотрена классификация стандартов по металлургии, распределение стандартов по различным группам раздела 77 - Металлургия общероссийского классификатора стандартов. Проанализировано распределение стандартов из раздела 77 – Металлургия по временным интервалам принятия стандартов