Discovery of an X-Ray Pulsar in the SMC: AX J0058-7203

We report on the discovery and analysis of an X-ray pulsar, AX J0058-7203, in the Small Magellanic Cloud. This pulsar exhibits coherent pulsations at P= 280.3 s with a double-peak structure. The X-ray spectrum is well fitted with a simple power-law model of photon index ~ 0.7. No significant change of the pulsation period over the observation was found. A comparison with ROSAT observations in the same field reveals that AX J0058-7203 is highly variable, and is most likely a Be star binary pulsar.Comment: 5 pages, 4 figures, to be published in PAS

ASCA Discovery of a Be X-Ray Pulsar in the SMC: AX J0051-733

ASCA observed the central region of the Small Magellanic Cloud, and found a hard X-ray source, AX J0051-733, at the position of the ROSAT source RX J0050.8-7316, which has an optical counterpart of a Be star. Coherent X-ray pulsations of 323.1 +/- 0.3 s were discovered from AX J0051-733. The pulse profile shows several sub-peaks in the soft (0.7-2.0 keV) X-ray band, but becomes nearly sinusoidal in the harder (2.0-7.0 keV) X-ray band. The X-ray spectrum was found to be hard, and is well fitted by a power-law model with a photon index of 1.0 +/- 0.4. The long-term flux history was examined with the archival data of Einstein observatory and ROSAT; a flux variability with a factor > 10 was found.Comment: 6 pages, 5 figures, accepted for publication in PAS

Review of Discrete X-Ray Sources in the Small Magellanic Cloud: Summary of the ASCA Results and Implication on the Recent Star Forming Activity

We made 22 observations on the Small Magellanic Cloud (SMC) and covered full regions by the end of the ASCA mission. We detected 106 discrete sources with a criterion of S/N > 5 and performed systematic analyses on all of the sources. We determined the source positions with an ~40'' error radius (90% confidence) for sources detected in the central 20' radius of the GIS. We detected coherent pulsations from 17 sources. Among them, eight were newly discovered during this study. We classified most of these pulsars as X-ray binary pulsars (XBPs) based on their properties, such as the flux variability and the existence of an optical counterpart. We detected X-ray emission from eight supernova remnants (SNRs). Among them, five SNRs showed emission lines in their spectra, hence we regarded the five as thermal SNRs. We found that XBPs and thermal SNRs in the SMC can be clearly separated by their spectral hardness ratio. Applying this empirical law to faint (thus unclassified) sources, we found 19 XBP candidates and four thermal SNR candidates. We also found several tens of candidates for active galactic nuclei, both from the hardness ratio and the logN--logS relation of extragalactic sources. Based on these ASCA results and further information from other sattelites, we compiled comprehensive catalogues of discrete X-ray sources in the Small Magellanic Cloud. Using the catalogues, we derived the spatial distributions of XBPs and SNRs. XBPs and SNRs were found to be concentrated in the main body and eastern wing, which resembles the distribution of young stars with ages of ~2e7yr. By comparing the source populations in the SMC and our Galaxy, we suggest that the star-forming rate (per unit mass) in the SMC was much higher than the Galaxy 1e7yr ago. We also discuss the recent change of the star-forming rate in the SMC.Comment: 61 pages, 19 figures, to be published in PASJ. Also available at http://www-cr.scphys.kyoto-u.ac.jp/member/jun/job/ (with high-resolution images

Changes in phenols contents from buckwheat sprouts during growth stage

Germinated buckwheat is buckwheat seeds soaked in water just until it begins to bud. Buckwheat sprouts are seedling plants of buckwheat grown up to 10-15 cm. The purpose of this study was to determine the optimal growth period for accumulating the most abundant functional phenol(s) in germinated buckwheat that had been soaked in darkness and buckwheat sprouts cultivated by hydroponic culture. The rutin contained in germinated buckwheat was analyzed by CE (capillary electrophoresis). Phenols, including isoorientin, orientin, isovitexin, vitexin, and rutin were separated from buckwheat sprouts by HPLC and identified by LC-MS. The highest rutin content in germinated buckwheat was found to be 15.8 mg/100 g DW at 20 h after germination. Buckwheat sprouts contained five kinds of major phenols. The highest amounts of isoorientin, orientin, isovitexin, and vitexin were measured at day 3, with the exception of rutin, and then a gradual decrease was observed as the sprouts grew. The quantities of isoorientin, orientin, isovitexin, and vitexin at day 3 were 5.8, 11.7, 26.2, and 28.9 mg/100 g FW, respectively. The rutin content rapidly increased to 109.0 mg/100 g FW until day 6. The highest total phenols in buckwheat sprouts were 162.9 mg/100 g FW at day 6. Germinated buckwheat soaked for 20 h and buckwheat sprouts cultivated for 6 days were rich in dietary phenol(s), which makes these plants a valuable functional food for human consumption.ArticleJOURNAL OF FOOD SCIENCE AND TECHNOLOGY-MYSORE. 50(1):86-93 (2013)journal articl

Blood-pressure-lowering effect of fermented buckwheat sprouts in spontaneously hypertensive rats

A practical antihypertensive food, neo-fermented buckwheat sprouts (neo-FBS), was produced from buckwheat sprouts by lactic fermentation. The neo-FBS preparation gave a 12.7 times better yield and had a 10 times more potent blood-pressure-lowering (BPL) effect than conventionally prepared products. Neo-FBS decreased both systolic and diastolic blood pressure in spontaneously hypertensive rats (SHRs) at a dose of 0.010 mg/kg, an effect comparable to 1.0 mg/kg captopril, an anti-hypertensive drug. Orally administered neo-FBS (10 mg/kg) significantly decreased angiotensin I-converting enzyme (ACE) activity in the lung, thoracic aorta, heart, kidney, and liver of SHRs. Neo-FBS had a detectable relaxing effect on a phenylephrine-precontracted thoracic aorta in SHRs at 0.5 mu g/mL and the EC50 value was 8.3 +/- 1.4 mu g/mL. The ACE inhibition and vasorelaxation activities were found to be responsible for the excellent BPL effect of neo-FBS. As SHR is a standard model for human hypertension, neo-FBS may also have BPL effects in human patients.ArticleJOURNAL OF FUNCTIONAL FOODS. 5(1):406-415 (2013)journal articl

Caractérisation électrique des propriétés d'interface dans les MOSFET nanométriques par des mesures de bruit basse fréquence

In this thesis, electrical properties of gate oxide/channel interface in ultra-scaled nanowire (NW) MOSFETs were experimentally investigated by carrier transport and low-frequency noise (LFN) characterizations. NW FETs, which have aggressively downscaled cross-section of the body, are strong candidates for near future CMOS node. However, the interface quality could be a critical issue due to the large surface/volume ratio, the multiple surface orientations, and additional strain technology to enhance the performance. Understanding of carrier transport and channel interface quality in NW FETs with advanced high-k/metal gate is thus particularly important. LFN provides deep insights into the interface properties of MOSFET without lower limit of required channel size. LFN measurement thus can be a powerful technique for ultra-scaled NW FETs. Also, fitting mobility (such as low-field mobility) extraction by Y-function method is an efficient method. Omega-gate NW FETs were fabricated from FD-SOI substrates, and with Hf-based high-k/metal gate (HfSiON/TiN), reducing detrimental effects by device downscaling. In addition, strain technologies to the channel were additively processed. Tensile strained-SOI substrate was used for NMOS, whereas compressive stressors were used for PMOS devices. Strained Si channel for PMOS was processed by raised SiGe S/D and CESL formations. Strained SiGe channel (SGOI) was also fabricated for further high-performance PMOS FETs. Firstly, the most common Id-Vg was characterized in single-channel NW FETs as the basic performance. Reference SOI NWs provided the excellent static control down to short channel of 17nm. Stressors dramatically enhanced on-current owing to a modification of channel energy-band structure. Then, extracted low-field mobility in NWs also showed large improvement of the performance by stressors. The mobility extraction effectively evaluated FET performance even for ultra-scaled NWs. Next, LFN investigated for various technological and architectural parameters. Carrier number fluctuations with correlated mobility fluctuations (CNF+CMF) model described 1/f noise in all our FETs down to the shortest NWs. Drain current noise behavior was basically similar in both N- and PMOS FETs regardless of technological splits. Larger 1/f noise stemming from S/D regions in PMOS FETs was perfectly interpreted by the CNF+CMF model completed with Rsd fluctuations. This observation highlighted an advantage of SGOI NW with the lowest level of S/D region noise. Geometrical variations altered the CNF component with simple impact of device scaling (reciprocal to both Wtot and Lg). No large impact of surface orientation difference between the channel (100) top and (110) side-walls in [110]-oriented NWs was observed. Scaling regularity with both Wtot and Lg, without much quantum effect, could be attributed to the use of HfSiON/TiN gate and carrier transport occurring mostly near top and side-wall surfaces even in NW geometry. Meanwhile, the CMF factor was not altered by decreasing dimensions, while the mobility strongly depends on the impact. Extracted oxide trap density was roughly steady with scaling, structure, and technological parameter impacts. Simple separation method of the contributions between channel top surface and side-walls was demonstrated in order to evaluate the difference. It revealed that oxide quality on (100) top and (110) side-walls was roughly comparable in all the [110]-devices. The density values lie in similar order as the recent reports. An excellent quality of the interface with HfSiON/TiN gate was thus sustained for all our technological and geometrical splits. Finally, our NWs fulfilled 1/f LFN requirements stated in the ITRS 2013 for future MG CMOS logic node. Consequently, we concluded that appropriate strain technologies powerfully improve both carrier transport and LFN property for future CMOS circuits consisting of NW FETs, without any large concern about the interface quality.Dans cette thèse, les propriétés électriques de transistors à nanofils de silicium liées à l'interface oxyde de grille/canal ont été étudiées par le biais de mesures de bruit basse fréquence (bruit 1/f) et de transport dans le canal. Ces transistors nanofils dont les dimensions ont été réduites jusqu'à quelques nanomètres pour la section, représentent une alternative sérieuse pour les futurs nœuds technologiques CMOS. Cependant, la qualité de l'interface oxyde de grille/canal pose question pour transistors dont l'architecture s'étend dans les 3 dimensions, en raison du fort rapport surface/volume inhérent à ces transistors, des différentes orientations cristallographiques de ces interfaces, ou encore des matériaux contraints utilisés pour améliorer les performances électriques. La compréhension des liens entre les propriétés de transport des porteurs dans le canal, qui garantissent en grande partie les performances électriques des transistors, et la qualité de l'interface avec l'oxyde de grille est fond primordiale pour optimiser les transistors nanofils. Les mesures de bruit, associées à l'étude du transport dans le canal, sont un outil puissant et adapté à ces dispositifs tridimensionnels, sans être limité par la taille ultra-réduite des transistors nanofils. Les transistors nanofils étudiés ont été fabriqués à partir de substrats minces SOI, et intègrent un empilement de grille HfSiON/TiN, qui permet de réduire les dimensions tout en conservant les mêmes propriétés électrostatiques. Pour gagner en performances, des contraintes mécaniques ont été introduites dans le canal en silicium : en tension pour les NMOS, par le biais de substrat contraint (sSOI), et en compression pour les PMOS. Un canal en compression uni-axiale peut être obtenu par l'intégration de source/drain en SiGe et/ou par l'utilisation de couches contraintes de type CESL. Des transistors à canal SiGe sur isolant en compression ont également été fabriqués et étudiés. Les caractéristiques électriques des divers transistors nanofils (courbes Id-Vg, compromis Ion-Ioff, mobilité des porteurs) démontrent l'excellent contrôle électrostatique dû à l'architecture 3D, ainsi que l'efficacité de l'ingénierie de contraintes dans les nanofils jusqu'à de faibles longueurs de grilles (~17nm). Des mesures de bruit basse fréquence ont été réalisées sur ces mêmes dispositifs et analysées en fonction des paramètres géométriques de l'architecture nanofils (largeur W, forme de la section, longueur de grille L), et des diverses variantes technologiques. Nous avons démontré que le bruit 1/f dans les transistors nanofils peut être décrit par le modèle de fluctuations du nombre de porteurs (CNF) corrélées aux fluctuations de mobilité (CMF). Le bruit associé aux régions S/D a pu également être intégré dans ce modèle en ajoutant une contribution, en particulier pour les PMOS. Alors que les différentes variantes technologiques ont peu d'effet sur le bruit 1/f, les variations de géométrie en L et W changent la composante de bruit liée aux fluctuations du nombre de porteurs (CNF) de manière inversement proportionnelle à la surface totale (~1/WL). Cette augmentation du bruit est le reflet du transport qui se produit à proximité des interfaces avec l'oxyde. Les différentes orientations des interfaces supérieures et latérales (110) ou (100) présentent la même quantité de pièges d'interface (extrait à partir des mesures de bruit 1/f, en séparant les contributions des différentes faces du nanofil) bien qu'ayant une rugosité différente essentiellement liée au process. En revanche la composante CMF n'est pas altérée par la réduction des dimensions contrairement à la mobilité des porteurs qui décroit fortement avec L. Finalement, les mesures de bruit 1/f ont été comparées aux spécifications ITRS 2013 pour les transistors multi-grilles en vue des futurs nœuds technologiques de la logique CMOS, et démontrent que nos transistors nanofils satisfont les exigences en la matière