Intrafield Distortion Characterization

Distortion of printed photoresist patterns exists in all photolithographic tools and can be generated by numerous factors. These noncorrectable overlay errors are the direct result of lens imperfections, machine inaccuracy, and reticle error. Any one of these factors can have extreme effects on pattern placement and quality. This study involved characterizing this anomaly and was the first of its kind at the Semiconductor & Microsystems Fabrication Laboratory (SMFL). Incorporating a unique test reticle, crosshairs were printed on silicon wafers. These features were measured via Manufacturing Electron Beam Exposure System (MEBES) market analysis to reveal any pattern migration. This analysis involves passing the electron stream over the beams of the crosshairs. The resulting signature from electron backscattering showed small movements of the pattern. Mathematical modeling of the raw data extracts correctable errors leaving a residual distortion map. These maps can be used as a figure of merit for the amount of pattern placement distortion within the photolithographic tool

A Pilot Study of Urokinase-Type Plasminogen Activator (uPA) Overexpression in the Brush Cytology of Patients with Malignant Pancreatic or Biliary Strictures

We have previously demonstrated that uPA is overexpressed in pancreatic tumors. In an attempt to diagnose these tumors earlier, we sought to determine whether uPA could be identified in endoscopic retrograde cholangiopancreatography obtained brushings in patients with malignant pancreatic and biliary strictures. Secondarily, uPA was measured in the serum of this patient population. uPA overexpression was identified in the cytologic tissue in 8 of 11 patients (72.7%). Serum analysis demonstrated a 2-fold higher concentration of uPA in the pancreaticobiliary cancer patients (1.27 versus 0.56 ng/mL; P = .0182). Also, uPA overexpression correlated with serum levels (P < .0001). This study confirms that uPA can be detected in the ERCP cytologically obtained tissue and is frequently present in a higher concentration in the serum of pancreaticobiliary cancer patients. A larger sample size will be required to address its value as a sensitive marker for the diagnosis of pancreatic or biliary cancers

Fabrication of Diamond Nanowires for Quantum Information Processing Applications

We present a design and a top-down fabrication method for realizing diamond nanowires in both bulk single crystal and polycrystalline diamond. Numerical modeling was used to study coupling between a Nitrogen Vacancy (NV) color center and optical modes of a nanowire, and to find an optimal range of nanowire diameters that allows for large collection efficiency of emitted photons. Inductively coupled plasma (ICP) reactive ion etching (RIE) with oxygen is used to fabricate the nanowires. Drop-casted nanoparticles (including $\mathrm{Au}$, $\mathrm{SiO_{2}}$ and $\mathrm{Al_2O_3}$) as well as electron beam lithography defined spin-on glass and evaporated $\mathrm{Au}$ have been used as an etch mask. We found $\mathrm{Al_2O_3}$ nanoparticles to be the most etch resistant. At the same time FOx e-beam resist (spin-on glass) proved to be a suitable etch mask for fabrication of ordered arrays of diamond nanowires. We were able to obtain nanowires with near vertical sidewalls in both polycrystalline and single crystal diamond. The heights and diameters of the polycrystalline nanowires presented in this paper are \unit[\approx1]{\mu m} and \unit[120-340]{nm}, respectively, having a \unit[200]{nm/min} etch rate. In the case of single crystal diamond (types Ib and IIa) nanowires the height and diameter for different diamonds and masks shown in this paper were \unit[1-2.4]{\mu m} and \unit[120-490]{nm} with etch rates between \unit[190-240]{nm/min}.Comment: 11 pages, 26 figures, submitted to Diamond and related Materials; http://www.sciencedirect.com/science?_ob=ArticleURL&_udi=B6TWV-4Y7MM1M-1&_user=10&_coverDate=01%2F25%2F2010&_rdoc=1&_fmt=high&_orig=search&_sort=d&_docanchor=&view=c&_acct=C000050221&_version=1&_urlVersion=0&_userid=10&md5=6dc58b30f4773a710c667306fc541cc

Chemical Mechanical Planarization for Ta-based Superconducting Quantum Devices

We report on the development of a chemical mechanical planarization (CMP) process for thick damascene Ta structures with pattern feature sizes down to 100 nm. This CMP process is the core of the fabrication sequence for scalable superconducting integrated circuits at 300 mm wafer scale. This work has established the elements of the various CMP-related design rules that can be followed by a designer for the layout of circuits that include Ta-based coplanar waveguide resonators, capacitors, and interconnects for tantalum-based qubits and single flux quantum (SFQ) circuits. The fabrication of these structures utilizes 193 nm optical lithography, along with 300 mm process tools for dielectric deposition, reactive ion etch, wet-clean, CMP and in-line metrology, all tools typical for a 300 mm wafer CMOS foundry. Process development was guided by measurements of physical and electrical characteristics of the planarized structures. Physical characterization such as atomic force microscopy across the 300 mm wafer surface showed local topography was less than 5 nm. Electrical characterization confirmed low leakage at room temperature, and less than 12% within wafer sheet resistance variation, for damascene Ta line-widths ranging from 100 nm to 3 {\mu}m. Run-to-run reproducibility was also evaluated. Effects of process integration choices including deposited thickness of Ta are discussed.Comment: 31 pages, 16 figure

Engineering of Niobium Surfaces Through Accelerated Neutral Atom Beam Technology For Quantum Applications

A major roadblock to scalable quantum computing is phase decoherence and energy relaxation caused by qubits interacting with defect-related two-level systems (TLS). Native oxides present on the surfaces of superconducting metals used in quantum devices are acknowledged to be a source of TLS that decrease qubit coherence times. Reducing microwave loss by surface engineering (i.e., replacing uncontrolled native oxide of superconducting metals with a thin, stable surface with predictable characteristics) can be a key enabler for pushing performance forward with devices of higher quality factor. In this work, we present a novel approach to replace the native oxide of niobium (typically formed in an uncontrolled fashion when its pristine surface is exposed to air) with an engineered oxide, using a room-temperature process that leverages Accelerated Neutral Atom Beam (ANAB) technology at 300 mm wafer scale. This ANAB beam is composed of a mixture of argon and oxygen, with tunable energy per atom, which is rastered across the wafer surface. The ANAB-engineered Nb-oxide thickness was found to vary from 2 nm to 6 nm depending on ANAB process parameters. Modeling of variable-energy XPS data confirm thickness and compositional control of the Nb surface oxide by the ANAB process. These results correlate well with those from transmission electron microscopy and X-ray reflectometry. Since ANAB is broadly applicable to material surfaces, the present study indicates its promise for modification of the surfaces of superconducting quantum circuits to achieve longer coherence times.Comment: 22 pages, 7 figures, will be submitted to Superconductor Science and Technology Special Focus Issue Journa

Conference of Microelectronics Research 2002

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