Could the Hercules satellite be a stellar stream in the Milky Way halo?

We investigate the possibility that Hercules, a recently discovered Milky Way (MW) satellite, is a stellar stream in the process of formation. This hypothesis is motivated by Hercules' highly elongated shape as well as the measurement of a tentative radial velocity gradient along its body. The application of simple analytical techniques on radial velocity data of its member stars provides tight constraints on the tangential velocity of the system (v_t = -16^{+6}_{-22} km/s, relative to the Galactic Standard of Rest). Combining this with its large receding velocity (145 km/s) and distance (138 kpc) yields an orbit that would have taken Hercules to within 6^{+9}_{-2} kpc of the Galactic centre approximately 0.6 Gyr ago. This very small perigalacticon can naturally explain the violent tidal destruction of the dwarf galaxy in the MW's gravitational potential, inducing its transformation into a stellar stream.Comment: Conference proceedings of "A Universe of dwarf galaxies: Observations, Theories, Simulations" held in Lyon, France (June 14-18, 2010

Are the Ultra-Faint Dwarf Galaxies Just Cusps?

We develop a technique to investigate the possibility that some of the recently discovered ultra-faint dwarf satellites of the Milky Way might be cusp caustics rather than gravitationally self-bound systems. Such cusps can form when a stream of stars folds, creating a region where the projected 2-D surface density is enhanced. In this work, we construct a Poisson maximum likelihood test to compare the cusp and exponential models of any substructure on an equal footing. We apply the test to the Hercules dwarf (d ~ 113 kpc, M_V ~ -6.2, e ~ 0.67). The flattened exponential model is strongly favored over the cusp model in the case of Hercules, ruling out at high confidence that Hercules is a cusp catastrophe. This test can be applied to any of the Milky Way dwarfs, and more generally to the entire stellar halo population, to search for the cusp catastrophes that might be expected in an accreted stellar halo.Comment: Accepted for publication in ApJ Letters. Minor revisions from version

Prometheus' Legacy: Responsibility and Technology

A prominent view in contemporary philosophy of technology suggests that more technology implies more possibilities and, therefore, more responsibilities. Consequently, the question ‘What technology?’ is discussed primarily on the backdrop of assessing, assigning, and avoiding technology-borne culpability. The view is reminiscent of the Olympian gods’ vengeful and harsh reaction to Prometheus’ play with fire. However, the Olympian view leaves unexplained how technologies increase possibilities. Also, if Olympians are right, endorsing their view will at some point demand putting a halt to technological development, which is absurd. Hence, we defend an alternative perspective on the relationship between responsibility and technology: Our Promethean view recognises technology as the result of collective, forward-looking responsibility and not only as a cause thereof. Several examples illustrate that technologies are not always the right means to tackle human vulnerabilities. Together, these arguments prompt a change in focus from the question ‘What technology?’ to ‘Why technology?

Luck, Epigenetics and the Worth of Collective Agents

Ethics & Philosophy of Technolog

Kondo physics in tunable semiconductor nanowire quantum dots

We have observed the Kondo effect in strongly coupled semiconducting nanowire quantum dots. The devices are made from indium arsenide nanowires, grown by molecular beam epitaxy, and contacted by titanium leads. The device transparency can be tuned by changing the potential on a gate electrode, and for increasing transparencies the effects dominating the transport changes from Coulomb Blockade to Universal Conductance Fluctuations with Kondo physics appearing in the intermediate region.Comment: 4 pages, 4 figure

Shadow epitaxy for in-situ growth of generic semiconductor/superconductor devices

Uniform, defect-free crystal interfaces and surfaces are crucial ingredients for realizing high-performance nanoscale devices. A pertinent example is that advances in gate-tunable and topological superconductivity using semiconductor/superconductor electronic devices are currently built on the hard proximity-induced superconducting gap obtained from epitaxial indium arsenide/aluminium heterostructures. Fabrication of devices requires selective etch processes; these exist only for InAs/Al hybrids, precluding the use of other, potentially superior material combinations. We present a crystal growth platform -- based on three-dimensional structuring of growth substrates -- which enables synthesis of semiconductor nanowire hybrids with in-situ patterned superconductor shells. This platform eliminates the need for etching, thereby enabling full freedom in choice of hybrid constituents. We realise and characterise all the most frequently used architectures in superconducting hybrid devices, finding increased yield and electrostatic stability compared to etched devices, along with evidence of ballistic superconductivity. In addition to aluminium, we present hybrid devices based on tantalum, niobium and vanadium. This is the submitted version of the manuscript. The accepted, peer reviewed version is available from Advanced Materials: http://doi.org/10.1002/adma.201908411 Previous title: Shadow lithography for in-situ growth of generic semiconductor/superconductor device

Fornærmelsens retorikk En studie av Gregor av Nazianz taler mot keiser Julian den frafalne

Dette en er bearbeidet utgave av oppgaven. Rettelser gjelder skrivefeil (august 2007