Transversal loss factor of an rf-focussing iris structure with rectangular holes

By replacing the irises in an electron linac by a slit one gets a structure capable of focussing/defocussing an electron beam (rf-quadrupoles). Therefore one can think of a combination of rf- and conventional magnetic quadrupoles for transversal focussing in linear-colliders. Furthermore they can meet the demands of BNS-damping without initial energy spread. Considering multibunch-operation of a collider, the long-range wake behaviour of this kind of structure has to be investigated. A three-cell structure has been built and investigated for dipole-type transversal long-range wakes. The experimental results are compared to numerical simulations done with MAFIA

A high-Tc 4-bit periodic threshold analog-to-digital converter

Using ramp-type Josephson junctions a 4-bit periodic threshold ADC has been designed, fabricated and tested. Practical design constraints will be discussed in terms of noise immunity, flux flow, available technology, switching speed etc. In a period of four years we fabricated about 100 chips in order to bring the technology to an acceptable level and to test various designs and circuit layouts. This resulted in a basic comparator that is rather insensitive to the stray field generated by the analog input signal or variations in mask alignment during fabrication. The input signal is fed into the comparators using a resistive divider network. Full functionality at low frequencies has been demonstrate

Against False Settlement: Designing Efficient Consumer Rights Enforcement Systems in Europe

Published in cooperation with the American Bar Association Section of Dispute Resolutio

Ramp Type HTS Josephson Junctions with PrBaCuGaO Barriers

Ramp type Josephson junctions have been fabricated using DyBa/sub 2/Cu/sub 3/O/sub 7-/spl delta// as electrode material and PrBa/sub 2/Cu/sub 3-x/Ga/sub x/O/sub 7-/spl delta// with x=0, 0.10 and 0.40 as junction barriers. Barrier thickness lie between 6-30 nm. Several junctions without barrier were made in order to find ways to minimize the damage of the ramp interface. In total about 40 chips were fabricated each containing several junctions and their I-V characteristics measured for various temperatures down to 4.2 K. Only those junctions showing clear RSJ-like curves were selected to be analyzed. In some cases we also measured I/sub c/ as a function of a small applied field and obtained a clear Fraunhofer pattern, but there is a tendency to flux trapping as evidenced by LTSEM. It was found at 4.2 K that the critical current density J/sub c/ scales with the specific resistance R/sub n/A as J/sub c/=C/sub bar/(R/sub n/A)/sup -m/ (m=1.8/spl plusmn/0.5). The barrier material dependent constant C/sub bar/ increases with x, whereas, for a given d, J/sub c/ is constant and R/sub n/A increase

Fluid-structure interaction in Taylor-Couette flow

The linear stability of a viscous fluid between two concentric, rotating cylinders is considered. The inner cylinder is a rigid boundary and the outer cylinder has an elastic layer exposed to the fluid. The subject is motivated by flow between two adjoining rollers in a printing press. The governing equations of the fluid layer are the incompressible Navier-Stokes equations, and the governing equations of the elastic layer are Navier\u27s equations. A narrow gap, neutral stability, and axisymmetric disturbances are assumed. The solution involves a novel technique for treating two layer stability problems, where an exact solution in the elastic layer is used to isolate the problem in the fluid layer. The results show that the presence of the elastic layer has only a slight effect on the critical Taylor numbers for the elastic parameters of modern printing presses. However, there are parameter values where the critical Taylor number is dramatically different than the classical Taylor-Couette problem

The design of the HOM-damping cells for the S-band linear collider

Damping cells for the higher order modes are necessary for the S-band linear collider to minimize BBU (Beam-Break-Up). The construction of the damper cells has to take into account the different field geometries of the higher order modes. So two different types of dampers have been designed: a wall slotted an an iris slotted cell. In order to optimize the two types of damping cells with respect to damping strength, impedance matching between coupling system and waveguide dampers and between damping cell and undamped cells and the tuning system, damping cells of both types have been built and examinated

The effect of a single HOM-damper cell within a channel of undamped cells

The effect of a single HOM-damper cell within a channel of undamped cells is described theoretically using an equivalent circuit model. From this a simple equation can be derived which relates the Q-value of the single damping-cell, the bandwidth of the passband under consideration, and the additional phase shift which is introduced by the damper cell to provide energy flow into the damper cell. This equation immediately shows the limitations of such single cell damping systems. Comparisons with experimental results are shown

An HTS Quasi-One junction SQUID-based periodic threshold comparator for a 4-bit superconductive flash A/D converter

An all high-Tc periodic threshold comparator for application in a 4-bit superconductive A/D converter has been realized and tested. The theoretical threshold curve of the comparator is calculated and compared to the measured results. Furthermore, the thermal noise immunity and the influence of flux-flow are considered, resulting in practical design constraints for the comparator circui