Determining Curie temperature of (Ga,Mn)As samples based on electrical transport measurements: low Curie temperature case

In this paper we show that the widely accepted method of the determination of Curie temperature (TC) in (Ga,Mn)As samples, based on the position of the peak in the temperature derivative of the resistivity,completely fails in the case of non-metallic and low-TC unannealed samples. In this case we propose an alternative method, also based on electric transport measurements, which exploits temperature dependence of the second derivative of the resistivity upon magnetic field.Comment: 5 pages, 3 figure

Enhancing thermoelectric properties of single-walled carbon nanotubes using halide compounds at room temperature and above.

Carbon nanotubes (CNTs) are materials with exceptional electrical, thermal, mechanical, and optical properties. Ever since it was demonstrated that they also possess interesting thermoelectric properties, they have been considered a promising solution for thermal energy harvesting. In this study, we present a simple method to enhance their performance. For this purpose, thin films obtained from high-quality single-walled CNTs (SWCNTs) were doped with a spectrum of inorganic and organic halide compounds. We studied how incorporating various halide species affects the electrical conductivity, the Seebeck coefficient, and the Power Factor. Since thermoelectric devices operate under non-ambient conditions, we also evaluated these materials' performance at elevated temperatures. Our research shows that appropriate dopant selection can result in almost fivefold improvement to the Power Factor compared to the pristine material. We also demonstrate that the chemical potential of the starting CNT network determines its properties, which is important for deciphering the true impact of chemical and physical functionalization of such ensembles

Electrostatically-induced strain of graphene on GaN nanorods

Few-layer graphene deposited on semiconductor nanorods separated by undoped spacers has been studied in perspective for the fabrication of stable nanoresonators. We show that an applied bias between the graphene layer and the nanorod substrate affects the graphene electrode in two ways: 1) by a change of the carrier concentration in graphene and 2) by inducing strain, as demonstrated by the Raman spectroscopy. The capacitance of the investigated structures scales with the area of graphene in contact with the nanorods. Due to the reduced contact surface, the efficiency of graphene gating is one order of magnitude lower than for a comparable structure without nanorods. The shift of graphene Raman modes observed under bias clearly shows the presence of electrostatically-induced strain and only a weak modification of carrier concentration, both independent of number of graphene layers. A higher impact of bias on strain was observed for samples with a larger contact area between the graphene and the nanorods which shows perspective for the construction of sensors and nanoresonator devices

Study of influence of domain structure on observed magnetoresistance anomalies in GaMnAs

Magneto-transport properties of a Ga0.93Mn0.07As ferromagnetic semiconductor film with strong epitaxial strain (Ga0.7In0.3As buffer) have been studied. The observed magnetoresistance showed peculiar peaks at the magnetic fields corresponding to magnetization switching probed by Hall voltage. Computer simulations showed that these anomalies could originate from the formation of complex, island-like magnetic domains, and their propagation in the sample

Galvanomagnetic methods of Curie temperature determination in (Ga,Mn)As

We critically discuss various experimental methods to determine Curie temperature TC of (Ga,Mn)As thin layers or other conducting magnetic materials by means of electric charge transport measurements. They all base on the influence of sample magnetization on the magnetoresistivity tensor ρ̂ and are an alternative to the method based upon an analysis of the temperature derivative of the sample resistance (Novák et al., 2008). These methods can be applied even when standard SQUID magnetometers are difficult or impossible to use – for example for extremely small samples or in the case of experiments performed at very specific physical conditions, e.g. at high hydrostatic pressure inside the clamp cell. We show that the use of the so called Arrott plot prepared with the use of high magnetic field isotherms ρxx(H0),ρxy(H0) (H0 – external magnetic field) may lead to substantial (of the order of 10 K) divergence of the obtained TC values depending on the assumptions which are necessary to make in this case and depending on the direction of a magnetic anisotropy easy axis. We also propose a number of ways how to obtain, basing on low magnetic field isotherms ρxx(H0),ρxy(H0), clear and characteristic features which are closely related to the ferromagnetic–paramagnetic phase transition

Hydrostatic-pressure-induced changes of magnetic anisotropy in (Ga, Mn)As thin films

The impact of hydrostatic pressure on magnetic anisotropy energies in (Ga, Mn)As thin films with in-plane and out-of-plane magnetic easy axes predefined by epitaxial strain was investigated. In both types of sample we observed a clear increase in both in-plane and out-of-plane anisotropy parameters with pressure. The out-of-plane anisotropy constant is well reproduced by the mean-field p-d Zener model; however, the changes in uniaxial anisotropy are much larger than expected in the Mn-Mn dimer scenario