Transition from Diffusive to Localized Regimes in Surface Corrugated Optical Waveguides

Exact calculations of the transmittance of surface corrugated optical waveguides are presented. The elastic scattering of diffuse light or other electromagnetic waves from a rough surface induces a diffusive transport along the waveguide axis. As the length of the corrugated part of the waveguide increases, a transition from the diffusive to the localized regime is observed. This involves an analogy with electron conduction in nanowires, and hence, a concept analogous to that of ``resistance'' can be introduced. We show an oscillatory behavior of both the elastic mean free path and the localization length versus the wavelength.Comment: 3 pages, REVTEX, 3 PS figure

Electronic transport in low temperature nanocrystalline silicon thin-film transistors obtained by Hot-Wire CVD

Hydrogenated nanocrystalline silicon (nc-Si:H) obtained by hot-wire chemical vapour deposition (HWCVD) at low substrate temperature (150 °C) has been incorporated as the active layer in bottom-gate thin-film transistors (TFTs). These devices were electrically characterised by measuring in vacuum the output and transfer characteristics for different temperatures. The field-effect mobility showed a thermally activated behaviour which could be attributed to carrier trapping at the band tails, as in hydrogenated amorphous silicon (a-Si:H), and potential barriers for the electronic transport. Trapped charge at the interfaces of the columns, which are typical in nc-Si:H, would account for these barriers. By using the Levinson technique, the quality of the material at the column boundaries could be studied. Finally, these results were interpreted according to the particular microstructure of nc-Si:H

A thermophysical study of the melting process in alkyl chain metal n-alkanoates: The thallium (I) series

The peculiar thermal behavior of the thallium(I) n-alkanoates series (consisting in several transitions between polymorphic and mesomorphic phases) in comparison with other metallic n-alkanoates series is stated. The allowance of highly accurate adiabatic heat capacity data permits a study of the CH2CH2 contributions to the lattice heat capacity curve at low temperature. Moreover, in this series an anomalous gradual enhancement of the lattice heat capacity has been interpreted from vibrational spectroscopy results as a noncooperative effect due to the internal hindered rotation of the alkyl chain (formation of gauche defects, even in the solid state). The thermodynamics of the “stepwise melting process” from the totally ordered solid at low temperature to the isotropic liquid is based on a revised lattice heat-capacity curve. This was used to evaluate the energy and entropy not only of the clear first order transitions present in the series but also of the described noncooperative effect. The CH2CH2 enthalpy and entropy contribution for this series is estimated and a comparison with the published values for other series is carried out. Moreover, the texture of the mesophases is revealed by polarized light microscopy. © 1999 American Institute of Physics.Peer Reviewedhttp://deepblue.lib.umich.edu/bitstream/2027.42/69602/2/JCPSA6-111-8-3590-1.pd

Raman microstructural analysis of silicon-on-insulator formed by high dose oxygen ion implantation: As-implanted structures

A microstructural analysis of silicon-on-insulator samples obtained by high dose oxygen ion implantation was performed by Raman scattering. The samples analyzed were obtained under different conditions thus leading to different concentrations of defects in the top Si layer. The samples were implanted with the surface covered with SiO2 capping layers of different thicknesses. The spectra measured from the as-implanted samples were fitted to a correlation length model taking into account the possible presence of stress effects in the spectra. This allowed quantification of both disorder effects, which are determined by structural defects, and residual stress in the top Si layer before annealing. These data were correlated to the density of dislocations remaining in the layer after annealing. The analysis performed corroborates the existence of two mechanisms that generate defects in the top Si layer that are related to surface conditions during implantation and the proximity of the top Si/buried oxide layer interface to the surface before annealing

Conditioning factors in flooding of karstic poljes—the case of the Zafarraya polje (South Spain)

The Zafarraya polje undergoes periodical flooding, of which the last episode (1996–1997) was analysed in detail on this paper. On the basis of the retention curves of the two lakes that formed in the northwestern and southwestern sectors, we calculated the total infiltration capacity of the polje to have a maximum value of 3–3.5 m3/s and so we infer that when the flow of the Arroyo de la Madre exceeds this figure, there will be a risk of flooding in the polje. We also propose a model for the 1996 flood that can be extended to other similar occurrences in this and other poljes where we can establish the role played by groundwater and surface water during this flood. In response to the heavy precipitation, the flow of the Arroyo de la Madre rose abruptly, exceeding the infiltration capacity of the main swallow holes on the polje, causing first the northern lake and then the southern lake to form with only surface water supply. The water table of the karst aquifer rose sharply, reaching a situation of equilibrium between the level in the lakes and the water table in this sector of the karst aquifer that prevented infiltration through the swallow holes. In the case of the southern lake, there were even cases of swallow holes that began to operate as estavelles. During this phase of maximum flooding, one single lake was present, which was divided into two once more when the water table of the karst aquifer in the polje sector began to fall and surface supply also began to decrease

Deep levels in p(+)-n junctions fabricated by rapid thermal annealing of Mg or Mg/P implanted InP

In this work, we investigate the deep levels present in ion implanted and rapid thermal annealed (RTA) InP p(+)-n junctions. The samples were implanted with magnesium or coimplanted with magnesium and phosphorus. These levels were characterized using deep level transient spectroscopy (DLTS) and capacitance-voltage transient technique (CVTT). Seven majority deep levels located in the upper half of the band gap were detected in the junctions by using DLTS measurements, four of which (at 0.6, 0.45, 0.425, and 0.2 eV below the conduction band) result from RTA, while the origin of the other three levels (at 0.46, 0.25, and 0.27 eV below the conduction band) can be ascribed to implantation damage. An RTA-induced origin was assigned to a minority deep level at 1.33 eV above the valence band. From CVTT measurements, several characteristics of each trap were derived. Tentative assignments have been proposed for the physical nature of all deep levels