Switching from Electron to Hole Transport in Solution-Processed Organic Blend Field-Effect Transistors

Organic electronics became an attractive alternative for practical applications in complementary logic circuits due to the unique features of organic semiconductors such as solution processability and ease of large-area manufacturing. Bulk heterojunctions (BHJ), consisting of a blend of two organic semiconductors of different electronic affinities, allow fabrication of a broad range of devices such as light-emitting transistors, light-emitting diodes, photovoltaics, photodetectors, ambipolar transistors and sensors. In this work, the charge carrier transport of BHJ films in field-effect transistors is switched from electron to hole domination upon processing and post-treatment. Low molecular weight n-type N,N′-bis(n-octyl)-(1,7&1,6)-dicyanoperylene-3,4:9,10-bis(dicarboximide) (PDI8-CN2) was blended with p-type poly[2,5-bis(3-tetradecylthiophene-2-yl)thieno[3,2-b]thiophene] (PBTTT-C14) and deposited by spin-coating to form BHJ films. Systematic investigation of the role of rotation speed, solution temperature, and thermal annealing on thin film morphology was performed using atomic force microscopy, scanning electron microscopy, and grazing incidence wide-angle X-ray scattering. It has been determined that upon thermal annealing the BHJ morphology is modified from small interconnected PDI8-CN2 crystals uniformly distributed in the polymer fraction to large planar PDI8-CN2 crystal domains on top of the blend film, leading to the switch from electron to hole transport in field-effect transistors

Polarization-Sensitive Photodetectors Based on Directionally Oriented Organic Bulk-Heterojunctions

Polarized spectroscopic photodetection enables numerous applications in diverse areas such as sensing, industrial quality control, and visible light communications. Although organic photodetectors (OPDs) can offer a cost-effective alternative to silicon-based technology—particularly when flexibility and large-area arrays are desired—polarized OPDs are only beginning to receive due research interest. Instead of resorting to external polarization optics, this report presents polarized OPDs based on directionally oriented blends of poly(3-hexylthiophene) (P3HT) and benchmark polymer or nonfullerene acceptors fabricated using a versatile solution-based method. Furthermore, a novel postprocessing scheme based on backfilling and plasma etching is advanced to ameliorate high dark-currents that are otherwise inherent to fibrillar active layers. The resulting polarized P3HT:N2200 OPDs exhibit a broad enhancement across all principal figures of merit compared to reference isotropic devices, including peak responsivities of 70 mA W$^{-1}$ and up to a threefold increase in 3 dB bandwidth to 0.75 MHz under parallel-polarized illumination. Polarization ratios of up to 3.5 are obtained across a spectral range that is determined by the specific donor–acceptor combinations. Finally, as a proof-of-concept demonstration, polarized OPDs are used for photoelasticity analysis of rubber films under tensile deformation, highlighting their potential for existing and emerging applications in advanced optical sensing