Novel Contact Materials For Improved Performance CdTe Solar Cells

This program has explored a number of novel materials for contacts to CdTe solar cells in order to reduce the back contact Schottky barrier to zero and produce an ohmic contact. The project tested a wide range of potential contact materials including TiN, ZrN, CuInSe2:N, a-Si:H and alloys with C, and FeS2. Improved contacts were achieved with FeS2. As part of understanding the operation of the devices and controlling the deposition processes, a number of other important results were obtained. In the process of this project and following its conclusion it led to research that resulted in seven journal articles, nine conference publications, 13 talks presented at conferences, and training of eight graduate students. The seven journal articles were published in 2015, 2016, and 2017 and have been cited, as of March 2018, 52 times (one cited 19 times and two cited 11 times). We demonstrated high levels of doping of CIS with N but electrical activity of the resulting N was not high and the results were difficult to reproduce. Furthermore, even with high doping the contacts were not good. Annealing did not improve the contacts. A-Si:H was found to produce acceptable but unstable contacts, degrading even over a day or two, apparently due to H incorporation into the CdTe. Alloying with C did not improve the contacts or stability. The transition metal nitrides produced Schottky type contacts for all materials tested. While these contacts were found to be unsatisfactory, we investigated FeS2 and found this material to be effective and comparable to the best contacts currently available. The contacts were found to be chemically stable under heat treatment and preferable to Cu doped contacts. Thus, we demonstrated an improved contact material in the course of this project. In addition, we developed new ways of controlling the deposition of CdTe and other materials, demonstrated the nature of defects in CdTe, and studied the distribution of conductivity and carrier type in CdTe devices. We demonstrated the conduction mechanism by which CdTe polycrystals improve the performance of the devices relative to single crystal devices. The mechanism shows that grain boundaries are conduction pathways for photogenerated electrons and that the corresponding holes are confined to the grains and therefore do not contribute to recombination

A Review: Thermal Stability of Methylammonium Lead Halide Based Perovskite Solar Cells

Perovskite solar cells have achieved photo-conversion efficiencies greater than 20%, making them a promising candidate as an emerging solar cell technology. While perovskite solar cells are expected to eventually compete with existing silicon-based solar cells on the market, their long-term stability has become a major bottleneck. In particular, perovskite films are found to be very sensitive to external factors such as air, UV light, light soaking, thermal stress and others. Among these stressors, light, oxygen and moisture-induced degradation can be slowed by integrating barrier or interface layers within the device architecture. However, the most representative perovskite absorber material, CH3NH3PbI3 (MAPbI3), appears to be thermally unstable even in an inert environment. This poses a substantial challenge for solar cell applications because device temperatures can be over 45°C higher than ambient temperatures when operating under direct sunlight. Herein, recent advances in resolving thermal stability problems are highlighted through literature review. Moreover, the most recent and promising strategies for overcoming thermal degradation are also summarized

Bandgap Profiling in CIGS Solar Cells Via Valence Electron Energy-Loss Spectroscopy

A robust, reproducible method for the extraction of relative bandgap trends from scanning transmission electron microscopy (STEM) based electron energy-loss spectroscopy (EELS) is described. The effectiveness of the approach is demonstrated by profiling the bandgap through a CuIn1-xGaxSe2 solar cell that possesses intentional Ga/(In + Ga) composition variation. The EELS-determined bandgap profile is compared to the nominal profile calculated from compositional data collected via STEM-based energy dispersive X-ray spectroscopy. The EELS based profile is found to closely track the calculated bandgap trends, with only a small, fixed offset difference. This method, which is particularly advantageous for relatively narrow bandgap materials and/or STEM systems with modest resolution capabilities (i.e., 100 meV), compromises absolute accuracy to provide a straightforward route for the correlation of local electronic structure trends with nanoscale chemical and physical structure/microstructure within semiconductor materials and devices. Published by AIP Publishing

Real-Time Optimization of Anti-Reflective Coatings for CIGS Solar Cells

A new method combining in-situ real-time spectroscopic ellipsometry and optical modeling to optimize the thickness of an anti-reflective (AR) coating for Cu(In,Ga)Se2 (CIGS) solar cells is described and applied directly to fabricate devices. The model is based on transfer matrix theory with input from the accurate measurement of complex dielectric function spectra and thickness of each layer in the solar cell by spectroscopic ellipsometry. The AR coating thickness is optimized in real time to optically enhance device performance with varying thickness and properties of the constituent layers. Among the parameters studied, we notably demonstrate how changes in thickness of the CIGS absorber layer, buffer layers, and transparent contact layer of higher performance solar cells affect the optimized AR coating thickness. An increase in the device performance of up to 6% with the optimized AR layer is demonstrated, emphasizing the importance of designing the AR coating based on the properties of the device structure

Characterization and Analysis of Ultrathin CIGS Films and Solar Cells Deposited by 3-Stage Process

In view of the large-scale utilization of Cu(In,Ga)Se2 (CIGS) solar cells for photovoltaic application, it is of interest not only to enhance the conversion efficiency but also to reduce the thickness of the CIGS absorber layer in order to reduce the cost and improve the solar cell manufacturing throughput. In situ and real-time spectroscopic ellipsometry (RTSE) has been used conjointly with ex situ characterizations to understand the properties of ultrathin CIGS films. This enables monitoring the growth process, analyzing the optical properties of the CIGS films during deposition, and extracting composition, film thickness, grain size, and surface roughness which can be corroborated with ex situ measurements. The fabricated devices were characterized using current voltage and quantum efficiency measurements and modeled using a 1-dimensional solar cell device simulator. An analysis of the diode parameters indicates that the efficiency of the thinnest cells was restricted not only by limited light absorption, as expected, but also by a low fill factor and open-circuit voltage, explained by an increased series resistance, reverse saturation current, and diode quality factor, associated with an increased trap density

Pulsed Laser Deposition of Graphite Counter Electrodes for Dye-Sensitized Solar Cells

We report on pulsed laser deposition of graphite onto flexible plastic and conductive glass substrates for use as a counter electrode in dye-sensitized solar cells. The efficiency of as-prepared graphite electrodes was tested using CdS-sensitized solar cell architecture resulting in external quantum efficiency comparable to that of conventional platinum counter electrodes. This work highlights the possibility of using pulsed laser deposited graphite as a low-cost alternative to platinum, which could be fabricated both on flexible and rigid substrates

Nanostructure Evolution of Magnetron Sputtered Hydrogenated Silicon Thin Films

Hydrogenated silicon (Si:H) thin films have been prepared by radio frequency (RF) magnetron sputtering. The effect of hydrogen gas concentration during sputtering on the resultant film structural and optical properties has been investigated by real time spectroscopic ellipsometry (RTSE) and grazing incidence x-ray diffraction (GIXRD). The analysis of in-situ RTSE data collected during sputter deposition tracks the evolution of surface roughness and film bulk layer thickness with time. Growth evolution diagrams depicting amorphous, nanocrystalline and mixed-phase regions for low and high deposition rate Si:H are constructed and the effects of process parameter (hydrogen gas concentration, total pressure and RF power) variations on the deposition rate have been qualified. Virtual interface analysis of RTSE data provides nanocrystalline volume fraction depth profiles in the mixed-phase growth regime. GIXRD measurements show the presence of (111) and (220) oriented crystallites. Vibrational mode absorption features from Si-Hn bonding configurations at 590, 640, 2000 and 2090 cm-1 are obtained by ex-situ infrared spectroscopic ellipsometry. Hydrogen incorporation decreases as films transition from amorphous to nanocrystalline phases with increasing hydrogen gas concentration during sputtering. Published by AIP Publishing

Assessment of Cu(In, Ga)Se₂ Solar Cells Degradation Due to Water Ingress Effect on the CdS Buffer Layer

The effect of water ingress on the surface of the buffer layer of a Cu(In, Ga)Se2 (CIGS) solar cell was studied. Such degradation can occur either during the fabrication process, if it involves a chemical bath as is often the case for CdS, or while the modules are in the field and encapsulants degrade. To simulate the impact of this moisture ingress, devices with a structure sodalime glass/Mo/CIGS/CdS were immersed in deionized water. The thin films were then analyzed both pre and post water soaking. Dynamic secondary ion mass spectroscopy (SIMS) was performed on completed devices to analyze impurity diffusion (predominantly sodium and potassium) and to assess potential degradation mechanisms. The results were compared to device measurements, which indicate a degradation of all device parameters due to an increase in the total and peak trap densities, as shown by simulation. This is potentially due to a modification of the sodium profile in the bulk CIGS, with a decrease content after water soaking or because the oxygen profile increased in the bulk CIGS after water soaking

Analysis of Post-Deposition Recrystallization Processing via Indium Bromide of Cu(In,Ga)Se\u3csub\u3e2\u3c/sub\u3e Thin Films

Cu(In,Ga)Se2 (CIGS) thin films were deposited at low temperature (350 °C) and high rate (10 µm/h) by a single stage process. The effect of post-deposition treatments at 400 °C and 500 °C by indium bromide vapor were studied and compared to the effect of a simple annealing under selenium. Structural, electrical, and chemical analyses demonstrate that there is a drastic difference between the different types of annealing, with the ones under indium bromide leading to much larger grains and higher conductivity. These properties are associated with a modification of the elemental profiles, specifically for gallium and sodium

Theoretical Analysis of Experimental Data of Sodium Diffusion in Oxidized Molybdenum Thin Films

In this work, the diffusion process of sodium (Na) in molybdenum (Mo) thin films while it was deposited on soda lime glass (SLG) was studied. A small amount of oxygen was present in the chamber while the direct-current (DC) magnetron sputtering was used for the deposition. The substrate temperatures were varied to observe its effect. Such molybdenum films, with or without oxidations, are often used in thin film solar cells, either as back contact or as hole transport layers. Secondary ion mass spectrometry (SIMS) was used to quantify the concentration of the species. A grain diffusion mechanistic model incorporating the effect of grain and grain boundary geometrical shape and size was developed. The model was used to provide an in-depth theoretical analysis of the sodium diffusion in molybdenum thin films that lead to the measured SIMS data. It was observed that not only diffusion coefficients should be considered when analyzing diffusion processes in thin films but also the ratio of grain boundary size to grain size. Both depend on substrate temperature and directly affect the amount of diffused species in the film. The data were analyzed under the light of the film growth speed versus diffusion front speed, the effect of oxygen content, and the effect of substrate temperature on the overall diffusion process. The temperature inversely affects the ratio of grain boundary size and grain size and directly affects the diffusion coefficient, which leads to a preferable temperature at which the highest amount of alkali can be found in the film