Design of coplanar power amplifiers for MM-WAVE system applications including thermal aspects

Due to the poor thermal conductivity of GaAs, successful power amplifier design in coplanar technology requires careful thermal considerations. The influences of the active device geometry and mounting conditions have been investigated theoretically and experimentally to provide reliable thermal management design data. 50-µm thinning and flip-chip with thermal bump attachment on AlN or diamond exhibited temperature rises in the order of 50 and 40-30 °C respectively, leading to significant improvement in the performance of coplanar power devices and circuits. These results demonstrate the potential of coplanar MMIC technology for high power applications

Trends and challenges in coplanar millimeter-wave integrated circuit design

Despite the advantages of coplanar waveguide technology for high performance and low cost MMIC applications, its possibilities are still not thoroughly exploited for commercial applications. This paper presents an overview of trends and latest achievements in millimeter-wave coplanar integrated circuit design, such as modeling aspects, mounting techniques, and system applications. Coplanar circuit technology has shown its potential to be competitive with microstrip by recent solutions of the previously hindering technical and technological problems, and the realization of circuits for high performance millimeter wave applications

Very compact 60 GHz high efficiency power amplifier in coplanar technology

We report on the development of a very compact 60 GHz high efficiency power amplifier operated at a bias voltage of only 3 V with a measured saturated output power of 200 mW. Due to the small chip size of 2 x 1 mm2 the amplifier has a power density of 100 mW/mm2 which is 80 per cent higher than the best results reported to date at this frequency. The combination of high output power and reduced chip size together with a state-of-the-art power added efficiency (PAE) of 21 per cent can be attributed to the use of 0. 15 mu m T-gate PHEMTs in combination with coplanar waveguide technology

Photonik II. Optische Verbindungstechnik (Optische Mikrowellenverbindungen). Teilvorhaben: Empfaenger-OEIC fuer GHz-Millimeterwellensignale Abschlussbericht

According to the specifications of the project partner Alcatel SEL the IAF has developed, produced and characterized amplifier MMICs with more than 25 dB gain rate at 60 GHz and delivered to the partners. According to the requirements of Alcatel SEL additional amplifiers with a higher saturated power were developed during the project trying to extend the maximum possible radio distance. Accordingly, the IAF has developed and produced a power amplifier with a P_-_1_d_B-power of more than 20 dBm and 60 GHz. Based on the MMICs developed by the IAF Alcatel was able to build a powerful amplifier module with 55 dB gain. The InGaAs-PIN-photodiodes has been successfully integrated in the existing GaAs-HEMT-MMIC-process with a gate-length of 0.15 #mu#m for millimeter wave circuits. First optical receivers for hybrid-fiber radio-systems at 42 GHz have been successfully produced. (orig.)SIGLEAvailable from TIB Hannover: DtF QN1(68,56) / FIZ - Fachinformationszzentrum Karlsruhe / TIB - Technische InformationsbibliothekBundesministerium fuer Bildung, Wissenschaft, Forschung und Technologie, Bonn (Germany)DEGerman