Effects of impurity atoms on sputtered GMR multilayers

We have investigated the effects of residual gas impurity atoms on interlayer exchange coupling and giant magnetoresistance (GMR) in Co(9Ä)/Cu(9Ä) multilayers. Structural analysis was performed by Co(59) NMR. We deposited sub-monolayer quantities of residual gases at different points in the Co/Cu bilayer; the interfaces, or the middle of the Cu spacers or CO magnetic layers. Impurities at the interface lower the GMR and increase remenant fraction and saturation field. We are able to model these results phenomenologically by adding biquadratic coupling. Impurities in the bulk of the Cu layers lower GMR still further, and such samples are well described by models containing almost 100% biquadratic coupling. We have demonstrated that the ttansport parameters in our samples are largely unaffected by small quantities of impurities, but that the interlayer coupling is extremely sensitive to them, particularly in the bulk of the Cu spacer layers

Reply on the comment on the paper "Superconducting transition in Nb nanowires fabricated using focused ion beam"

In this communication we present our response to the recent comment of A. Engel regarding our paper on FIB- fabricated Nb nanowires (see Vol. 20 (2009) Pag. 465302). After further analysis and additional experimental evidence, we conclude that our interpretation of the experimental results in light of QPS theory is still valid when compared with the alternative proximity-based model as proposed by A. Engel.Comment: 3 pages, 1 figure, accepted by Nanotechnolog

Controlled enhancement or suppression of exchange biasing using impurity δ\delta-layers

The effects of inserting impurity $\delta$-layers of various elements into a Co/IrMn exchange biased bilayer, at both the interface, and at given points within the IrMn layer a distance from the interface, has been investigated. Depending on the chemical species of dopant, and its position, we found that the exchange biasing can be either strongly enhanced or suppressed. We show that biasing is enhanced with a dusting of certain magnetic impurities, present at either at the interface or sufficiently far away from the Co/IrMn interface. This illustrates that the final spin structure at the Co/IrMn interface is not only governed by interface structure/roughness but is also mediated by local exchange or anisotropy variations within the bulk of the IrMn

Scattering in InAs/GaSb Coupled Quantum Wells as a Probe of Higher Order Subband Hybridisation

We have performed a detailed investigation into the inter-subband scattering within InAs/GaSb coupled quantum wells in the electron dominated regime. By considering the carrier mobilities and the quantum lifetime as a function of carrier density, we find that the occupation of higher order electron-like subbands are inhibited by anticrossing with the hole subbands. We also find that, by applying a gate bias to the GaSb layer, we are able to move the electron-hole anticrossing point in energy, modulating the electron-like states that should be localised within the InAs layer

Exchange anisotropy pinning of a standing spin wave mode

Standing spin waves in a thin film are used as sensitive probes of interface pinning induced by an antiferromagnet through exchange anisotropy. Using coplanar waveguide ferromagnetic resonance, pinning of the lowest energy spin wave thickness mode in Ni(80)Fe(20)/Ir(25)Mn(75) exchange biased bilayers was studied for a range of IrMn thicknesses. We show that pinning of the standing mode can be used to amplify, relative to the fundamental resonance, frequency shifts associated with exchange bias. The shifts provide a unique `fingerprint' of the exchange bias and can be interpreted in terms of an effective ferromagnetic film thickness and ferromagnet/antiferromagnet interface anisotropy. Thermal effects are studied for ultra-thin antiferromagnetic Ir(25)Mn(75) thicknesses, and the onset of bias is correlated with changes in the pinning fields. The pinning strength magnitude is found to grow with cooling of the sample, while the effective ferromagnetic film thickness simultaneously decreases. These results suggest that exchange bias involves some deformation of magnetic order in the interface region.Comment: 7 pages, 7 figure