Sharp-switching band-modulation back-gated devices in advanced FDSOI technology

International audienceA band-modulation device with a free top surface, named Z3-FET (Zero front-gate, Zero swing slope and Zero impact ionization) and fabricated in the most advanced Fully Depleted Silicon-On-Insulator technology, is demonstrated experimentally. Since the device has no front gate, the operation mechanism is controlled by two adjacent heavily doped buried ground planes acting as back-gates. Characteristics such as sharp quasi-vertical switching, low leakage, and tunable trigger voltage are measured and discussed. We explore several variants (thin and thick silicon or SiGe body) and show promising results in terms of high current, switching performance and ESD capability with relatively low back-gate and drain bias operation

A band-modulation device in advanced FDSOI technology: Sharp switching characteristics

International audienceA band-modulation device is demonstrated experimentally in advanced FDSOI (Fully Depleted SOI). The Z2-FET (Zero Impact Ionization and Zero Subthreshold Slope FET) is a very recent sharp switching device which achieves remarkable performance in terms of leakage current and triggering control. The device is fabricated with Ultra-Thin Body and Buried Oxide (UTBB) Silicon-On-Insulator (SOI) technology, features an extremely sharp on-switch, low leakage and an adjustable triggering voltage (VON). The Z2-FET operation relies on the modulation of electrons and holes injection barriers. In this paper, we show, for the first time, experimental data obtained with the most advanced FDSOI node

Thin-body ESD protections in 28nm UTBB-FDSOI: From static to transient behavior

International audienceInnovative Ultra-Thin Body and Buried Oxide FDSOI protections (BBC-T and Z2-FET) are characterized and analyzed in order to assess the CDM time domain behavior. In addition to static (leakage and triggering) control, it is found that front and back gate coupling is a very efficient way to improve the transient responses of the proposed devices