J-band 16 watt HFET amplifier module for very high power applications

In this work we report on the design and construction of a three stage J-band (10-10.5 GHz) high power amplifier based on 0.4 um gate-length HFET devices. In particular we will demonstrate that by means of a Micro Hybrid Integrated Circuits (MHIC) approach, power amplifier with Pout=16 W, Gass=19 dB @ ldBc and n|=27% can be routinely achieved

A high-yield monolithic X-band four bit phase-shifter

A key element in a GaAs MMIC Transmit/Receive module for active Phased-array application is the phase-shifter needed for the electronic beam steering; because of the circuit complexity and usually large chip size the technological and electrical yield must be maximized. In the present work the design, realisation and performance of an X-band, four-bit phase shifter, using a high-yield technology and a tolerant electric circuit are described

Packaged X-band T/R module for active phased array radar applications

In this article we describe a global design approach of an X-band Tx/Rx module which, by means of a Multi Chip Module (MCM) technique, includes in a single package the different microwave functions (4-bit phase-shifter, low-noise amplifier, power amplifier, switching control circuits), the thin film interconnections, the bias circuits, the driver circuits (Si ICs) and the switching MOS

Broadband high-Q monolithic oscillator tuned by planar yig resonator.

We have designed and characterised a one-port MSFVW-SER based monolithic oscillator working at X band. Loaded Q's up to 3600 has been obtained at 9 GHz with tuning band up to 2 GHz