Moderate temperature detector development

P-side backside reflecting constant, photodiode characterization, and photodiode diffusion and G-R currents were investigated in an effort to develop an 8 m to 12 m infrared quantum detector using mercury cadmium telluride. Anodization, phosphorus implantation, and the graded band gap concept were approaches considered for backside formation. Variable thickness diodes were fabricated with a back surface anodic oxide to investigate the effect of this surface preparation on the diffusion limited zero bias impedance. A modeling technique was refined to thoroughly model diode characteristics. Values for the surface recombination velocity in the depletion region were obtained. These values were improved by implementing better surface damage removal techniques

Moderate temperature detector development

The development of (Hg, Cd)Te detectors for 8 to 12 micrometer wavelength regions capable of achieving significantly improved sensitivity at noncryogenic temperatures is discussed

Improved detectivity of pyroelectric detectors

High detectivity single-element SBN pyroelectric detectors were fabricated. The theory and technology developments related to improved detector performance were identified and formulated. Improved methods of material characterization, thinning, mounting, blackening and amplifier matching are discussed. Detectors with detectivities of 1.3 x 10 to the 9th power square root of Hz/watt at 1 Hz are reported. Factors limiting performance and recommendations for future work are discussed