94 research outputs found

    Specific features of the electrical resistance of half-metallic ferromagnetic alloys Co2CrAl and Co2CrGa

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    It has been shown by comparing the results of studying the electrical and magnetic properties of the half-metallic ferromagnetic Heusler alloys Co2CrAl and Co2CrGa with the calculations of their electronic structure that high values of the electrical resistivity ρ are caused by a disordered distribution of atoms over the sites of the L21 cubic structure, and the anomalous behavior of ρ(T) is associated with the transformation of the electronic spectrum due to the ferromagnetic-to-paramagnetic transition. © 2013 Pleiades Publishing, Ltd

    Electrical and galvanomagnetic properties of AuAl2+6%Cu intermetallic compounds at low temperatures

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    The AuAl2 intermetallic compounds are of substantial interest in view of their application potential. The investigated intermetallics AuAl 2+6%Cu were prepared from fine powders of AuAl2 and Cu by vacuum sputtering on a glass substrate and consisted of films with a thickness of about one micrometer. The films were annealed. The temperature and field dependence of the electroresistivity, the magnetoresistivity and the Hall effect of AuAl2+6%Cu films were measured in the temperature interval from 4.2 to 100 K and at magnetic fields of up to 15 T. We demonstrate that the temperature dependence of the electroresistivity has a minimum at T = 20 K and a metallic behavior above this temperature. The magnetoresistivity is very small (less then 1%), positive at low temperatures and negative above 12 K. The Hall coefficient is positive, which corresponds to the holes in a one zone model with a charge carrier concentration of about 1.6 1020 cm-3. © Published under licence by IOP Publishing Ltd

    Magnetic and electrical properties of the half-metallic ferromagnets Co2CrAl

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    This paper presents the results of measurements of the magnetic and electrical properties of the ferromagnetic alloy Co2CrAl in two structural states: (i) after severe plastic deformation and (ii) after shortterm high-temperature annealing of the deformed specimens. The experiments have been performed at temperatures in the range from 2 to 900 K in magnetic fields H ≤ 50 kOe. The ferromagnetic Curie temperature TC and the paramagnetic Curie temperature Θ have been determined (TC = 305 K and Θ = 326 K), as well as the spontaneous magnetic moment μS and the effective magnetic moment μeff per molecule of the alloy (μS = 1.62 μB and μeff 2 = 8.2 μB 2). It has been shown that the magnetic crystalline anisotropy energy of the alloy is on the order of ∼5 × 105 erg/g. The specific features of the electrical properties are associated with the presence of an energy gap in the electronic spectrum near the Fermi level EF and with the change in the parameters of the energy gap as a function of the temperature. © 2013 Pleiades Publishing, Ltd

    Peculiarities of the electronic transport in half-metallic Co-based Heusler alloys

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    Electrical, magnetic and galvanomagnetic properties of half-metallic Heusler alloys of Co2_2YZ (Y = Ti, V, Cr, Mn, Fe, Ni, and Z = Al, Si, Ga, Ge, In, Sn, Sb) were studied in the temperature range 4.2--900 K and in magnetic fields of up to 100 kOe. It was found that varying Y in affects strongly the electric resistivity and its temperature dependence ρ(T)\rho(T), while this effect is not observed upon changing Z. When Y is varied, extrema (maximum or minimum) are observed in ρ(T)\rho(T) near the Curie temperature TCT_C. At T<TCT < T_C, the ρ(T)\rho(T) behavior can be ascribed to a change in electronic energy spectrum near the Fermi level. The coefficients of the normal and anomalous Hall effect were determined. It was shown that the latter coefficient, RSR_S, is related to the residual resistivity ρ0\rho_0 by a power law RSρ0k/MSR_S \sim \rho_0^k/M_S with MSM_S the spontaneous magnetization. The exponent kk was found to be 1.8 for Co2_2FeZ alloys, which is typical for asymmetric scattering mechanisms, and 2.9 for Co2_2YAl alloys, which indicates an additional contribution to the anomalous Hall effect. The temperature dependence of resistivity at low temperatures is analyzed and discussed in the framework of the two-magnon scattering theory.Comment: Invited Report on the Moscow International Symposium on Magnetism MISM-2017, pdf only, 6 pages, J. Magn. Magn. Mater., in pres

    Electrical and optical properties of a PtSn 4 single crystal

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    A topological semimetal PtSn4 single crystal was grown by method of crystallization from a solution in a melt. Then the electrical resistivity and galvanomagnetic properties (magnetoresistivity and the Hall effect) were studied in the temperature range from 4.2 to 80 K and in magnetic fields up to 100 kOe. The optical measurements were carried out at room temperature. The residual resistivity is shown to be low enough and amount to ∼ 0.5 μOhm•cm. The temperature dependence of the electrical resistivity has a metallic type, increasing monotonically with temperature. A sufficiently large magnetoresistance of 750% is observed. The majority carriers are supposed to be holes with a concentration of ∼ 6.8•10 21 cm -3 and mobility of ∼ 1950 cm 2 /Vs at T = 4.2 K as a result of the Hall effect studies. The optical properties of PtSn 4 have features characteristic of "bad" metals. © 2019 Published under licence by IOP Publishing Ltd.This work was partly supported by the state assignment of Russia (theme “Spin” No. АААА-А18-18020290104-2 and theme “Electron” No. АААА-А18-118020190098-5), by the RFBR (project No.17-52-52008) and by the Government of the Russian Federation (state contract No. 02.A03.21.0006)

    The Electronic Structure, Thermoelectric, and Optical Properties of Heusler Alloys Mn2MeAl (Me = Ti, V, Cr)

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    Abstract: The results of calculations of the electronic structure, thermoelectric characteristics, and experimental study of the thermoelectric, electrical, and optical properties of Mn2MeAl Heusler alloys (Me = Ti, V, Cr) are presented. The agreement between theory and experiment in the sign of the Seebeck coefficient is shown. The obtained pattern of the band spectrum allows us to qualitatively explain the peculiarities of the temperature dependences of the electrical resistance and the permittivity dispersion. © 2023, The Author(s).Ural Branch, Russian Academy of Sciences, UB RAS; Russian Science Foundation, RSF: 22-22-20109This study was supported by a grant from the Russian Science Foundation (project no. 22-22-20109, https://rscf.ru/project/22-22-20109/ , Institute of Metal Physics, Ural Branch, Russian Academy of Sciences)

    Multipartite Entanglement in Rabi Driven Superconducting Qubits

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    Exploring highly connected networks of qubits is invaluable for implementing various quantum algorithms and simulations as it allows for entangling qubits with reduced circuit depth. Here, we demonstrate a multi-qubit STAR (Sideband Tone Assisted Rabi driven) gate. Our scheme is inspired by the ion qubit M{\o}lmer-S{\o}rensen gate and is mediated by a shared photonic mode and Rabi-driven superconducting qubits, which relaxes restrictions on qubit frequencies during fabrication and supports scalability. We achieve a two-qubit gate with maximum state fidelity of 0.95 in 310 ns, a three-qubit gate with state fidelity 0.905 in 217 ns, and a four-qubit gate with state fidelity 0.66 in 200 ns. Furthermore, we develop a model of the gate that show the four-qubit gate is limited by shared resonator losses and the spread of qubit-resonator couplings, which must be addressed to reach high-fidelity operations.Comment: 16 pages, 14 figure

    Josephson Effect between Condensates with Different Internal Structures

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    A general formula for Josephson current in a wide class of hybrid junctions between different internal structures is derived on the basis of the Andreev picture. The formula extends existing formulae and also enables us to analyze novel B-phase/A-phase/B-phase (BAB) junctions in superfluid helium three systems, which are accessible to experiments. It is predicted that BAB junctions will exhibit two types of current-phase relations associated with different internal symmetries. A ``pseudo-magnetic interface effect'' inherent in the system is also revealed.Comment: 4 pages, 2 figure

    Magnetic and thermal properties of alloys close in composition to the spin gapless semiconductor Mn2CoAl

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    The field dependence of magnetization at T = 4.2 K and in magnetic fields of up to 70 kOe, temperature dependences of magnetization (2 K 11 kOe) magnetization is described in the Stoner models with the Rhodes-Wohlfarth parameter pRW = 1.3 for Mn1.99Co0.96Al1.05 and pRW = 2.3 for Mn1.79Co1.25Al0.96. When the composition deviates from the stoichiometric Mn2CoAl, the spontaneous moment decreases slightly, the effective moment, on the contrary, increases. In this case, a negative sign of the temperature-independent component of the paramagnetic susceptibility is observed. The density of states n(EF) at Fermi level and the Debye temperature ΘD of studied alloys have the usual values for 3d-metal alloys. © 2021 Author(s).The research was carried out within the state assignment of Ministry of Science and Higher Education of the Russian Federation (theme “Spin” No. AAAA-A18-118020290104-2), was supported in part by the Russian Foundation for Basic Research (projects Nos. 18-02-00739 and 20-32-90065) and by the Government of the Russian Federation (decision No. 211, contract No. 02.A03.21.0006). The authors would like to thank D. A. Shishkin and P. B. Terentyev for measuring the magnetic properties of alloys at high temperatures

    Structure and magnetic properties of the Co2FeAl and Co2NiSi Heusler alloy films

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    The structural and magnetic properties (field dependences of the magnetization in magnetic fields of up to 6 kOe) of thin-film Co2FeAl, and Co2NiSi Heusler alloys grown by pulsed laser deposition on glass and a single-crystalline Al2O3 R-plane substrate at different growth temperatures (20, 280 and 420 °C) were studied. It was found that the stoichiometric composition of the films depends on the substrate temperature during growth and repeats the composition of the target for films grown at low temperatures. The films deposited on a single crystalline Al2O3 substrate have uniaxial magnetic anisotropy in the plane. © Published under licence by IOP Publishing Ltd.This work was partly supported by the state assignment of Minobrnauki of Russia (themes “Spin” No. АААА-А18-118020290104-2), RFBR grants (Nos. 18-32-00686 and 18-02-00739) and the Government of the Russian Federation (state contract No. 02.A03.21.0006)
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