16 research outputs found

    Magnetic properties of epitaxial single crystal ultrathin Fe\u3csub\u3e3\u3c/sub\u3eSi films on GaAs (001)

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    Magnetic properties of Fe3Si films with thickness from 2 to 210 monolayers (ML) epitaxially grown on GaAs (001) were studied using a superconducting quantum interference device and alternating gradient force magnetometers. Growth of these single-crystal intermetallic compound films were carried out in a multichamber molecular beam epitaxy (MBE) system. The samples were covered in situ with Au 50 Å thick to prevent oxidation when the samples were removed from the MBE chamber. All the films are ferromagnetic even for samples as thin as 2 ML. The easy magnetization direction of the films is parallel to the film surface. The magnetic coercivity forces (Hc) of the samples increase as the film thickness decreases to 10 ML, and then decrease when the film thickness decreases further to 2 ML

    Structure of Sc\u3csub\u3e2\u3c/sub\u3eO\u3csub\u3e3\u3c/sub\u3e films epitaxially grown on α -Al\u3csub\u3e2\u3c/sub\u3eO\u3csub\u3e3\u3c/sub\u3e (0001)

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    The crystal structure of scandium oxide films epitaxially grown on α -Al2O3 (0001) under an ultrahigh-vacuum is studied by single-crystal x-ray diffraction. The Sc2O3 film grows in bixbyite phase on the basal (0001) surface of the sapphire substrate with its (111) axis aligned parallel to the substrate normal. In-plane orientation of the film, however, exhibits two distinct growth directions that are defined by the two possible surface orientations of the stepped α -Al2O3 substrate. The atomic structure of the high-quality epitaxial film is fully relaxed and the film has unusual thickness uniformity

    Magnetic properties of epitaxial single crystal ultrathin Fe\u3csub\u3e3\u3c/sub\u3eSi films on GaAs (001)

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    Magnetic properties of Fe3Si films with thickness from 2 to 210 monolayers (ML) epitaxially grown on GaAs (001) were studied using a superconducting quantum interference device and alternating gradient force magnetometers. Growth of these single-crystal intermetallic compound films were carried out in a multichamber molecular beam epitaxy (MBE) system. The samples were covered in situ with Au 50 Å thick to prevent oxidation when the samples were removed from the MBE chamber. All the films are ferromagnetic even for samples as thin as 2 ML. The easy magnetization direction of the films is parallel to the film surface. The magnetic coercivity forces (Hc) of the samples increase as the film thickness decreases to 10 ML, and then decrease when the film thickness decreases further to 2 ML

    GaAs MOSFET using MBE-grown Ga2O3 (Gd2O3) as gate oxide

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