Magnetic properties of Fe3Si films with thickness from 2 to 210 monolayers (ML) epitaxially grown on GaAs (001) were studied using a superconducting quantum interference device and alternating gradient force magnetometers. Growth of these single-crystal intermetallic compound films were carried out in a multichamber molecular beam epitaxy (MBE) system. The samples were covered in situ with Au 50 Å thick to prevent oxidation when the samples were removed from the MBE chamber. All the films are ferromagnetic even for samples as thin as 2 ML. The easy magnetization direction of the films is parallel to the film surface. The magnetic coercivity forces (Hc) of the samples increase as the film thickness decreases to 10 ML, and then decrease when the film thickness decreases further to 2 ML

Chen, H.S.

Hong, M.

Kwo, J.

Liou, Sy_Hwang

Malhotra, S.S.

Mannaerts, J.P.

Shen, J.X.

English

UNL | Libraries

University of Nebraska - Lincoln 
DigitalCommons@University of Nebraska - Lincoln 
Si-Hwang Liou Publications Research Papers in Physics and Astronomy 
May 1993 
Magnetic properties of epitaxial single crystal ultrathin Fe3Si films 
on GaAs (001) 
Sy_Hwang Liou 
University of Nebraska-Lincoln, sliou@unl.edu 
S.S. Malhotra 
University of Nebraska - Lincoln 
J.X. Shen 
University of Nebraska - Lincoln 
M. Hong 
AT&T Bell Laboratories, Murray Hill, New Jersey 
J. Kwo 
AT&T Bell Laboratories, Murray Hill, New Jersey 
See next page for additional authors 
Follow this and additional works at: https://digitalcommons.unl.edu/physicsliou 
 Part of the Physics Commons 
Liou, Sy_Hwang; Malhotra, S.S.; Shen, J.X.; Hong, M.; Kwo, J.; Chen, H.S.; and Mannaerts, J.P., "Magnetic 
properties of epitaxial single crystal ultrathin Fe3Si films on GaAs (001)" (1993). Si-Hwang Liou 
Publications. 51. 
https://digitalcommons.unl.edu/physicsliou/51 
This Article is brought to you for free and open access by the Research Papers in Physics and Astronomy at 
DigitalCommons@University of Nebraska - Lincoln. It has been accepted for inclusion in Si-Hwang Liou Publications 
by an authorized administrator of DigitalCommons@University of Nebraska - Lincoln. 
Authors 
Sy_Hwang Liou, S.S. Malhotra, J.X. Shen, M. Hong, J. Kwo, H.S. Chen, and J.P. Mannaerts 
This article is available at DigitalCommons@University of Nebraska - Lincoln: https://digitalcommons.unl.edu/
physicsliou/51 
Magnetic properties of epitaxial single crystal ultrathin FesSi films 
on GaAs (001) 
S. H. Liou, S, S. Malhotra, and J. X. Shen 
Behlen Laboratory of Physics and Center for Materials Research and dnalysis, University of Nebraska, 
Lincoln, Nebraska 68588-N II 
M. Hong, J. Kwo, H. S. Chen, and J. P. Mannaerts 
A T&T Bell Laboratories, Murray Hill, Nem Jersey 07914 
Magnetic properties of Fe,Si films with thickness from 2 to 210 monolayers (ML) epitaxially 
grown on GaAs (001) were studied using a superconducting quantum interference device and 
alternating gradient force magnetometers. Growth of these single-crystal intermetallic 
compound films were carried out in a multichamber molecular beam epitaxy (MBE) system. 
The samples were covered in situ with Au 50 A thick to prevent oxidation when the samples 
were removed from the MBE chamber. All the films are ferromagnetic even for samples as thin 
as 2 ML. The easy magnetization direction of the films is parallel to the film surface. The 
magnetic coercivity forces (H,) of the samples increase as the film thickness dec.reases to 10 ML., 
and then decrease when the film thickness decreases further to 2 ML. 
INTRODUCTION 
The integration of magnetic materials with III-V com- 
pound semiconductors may provide new devices which ex- 
pand the usages of both classes of materials. Many ele- 
ments and intermet.allic compounds have been found to 
grow epitaxially on GaAs.‘-7 Among them Fe, bee Co, and 
Fe3A11-,Si, films are ferromagnetic at room tempera- 
ture.“” 
For Fe or Co on GaAs, interaction and interdiffusion 
occur at some moderate temperatures of - 200 “C!. In con- 
trast, the interface between GaAs and the intermetallic 
compound Fe3A1, .-,Si, is thermodynamically stable for 
temperatures up to 600 “C!.’ This compound has a BiF3 
(DO,) structure with a lattice constant very close to that 
of GaAs, while bulk GaAs possesses a zinc-blende sttuc- 
ture with a lattice constant of 5.6533 A, as illustrated in 
Fig. 1. 
In this paper, we focused on the magnetic properties of 
one member of the compound family, FesSi, which has a 
lattice constant of 5.64 A. The lattice mismatch between 
Fe$i (OOI) and GaAs (001) is only -0.23%. The stabil- 
ity at the interface and the small lattice mismatch allow us 
to prepare epitaxial ultrathin [a few monolayers (ML)] 
FesSi films on GaAs in a multichamber molecular beam 
epitaxy (MBE) system.’ We observed that Fe,Si films 
down to 2 ML. thick are ferromagnetic and the easy mag- 
netization is in the film plane. The coercivities of the films 
increase with decreasing thickness, and then decrease when 
the film thickness is less than 10 ML. 
EXPERIMENT 
The MBE system includes two growth chambers; a 
solid source III-V (GaAs) chamber and a metal deposition 
chamber which is As free and is equipped with two elec- 
tron guns and several effusion cells, capable of evaporating 
materials with high melting points. In this work, Fe and Si 
were evaporated from electron beam sources with a depo- 
sition rate of 0.5 A/s for Fe,Si. First, a buffer layer of 
GaAs 1 ,um thick was grown on a GaAs (001) wafer. The 
sample was then transferred to the metal deposition cham- 
ber for the growth of FesSi. A wide range of substrate 
temperatures between 250 and 500 “C were used. The 
growth and microstructure of Fe$i films were studied us- 
ing in situ reflection high energy electron diffraction 
(RHEED) and transmission electron microscopy (TEM). 
Rutherford backscattering spectrometty (RBS) was used 
to calibrate the composition and the thickness of thicker 
Fe$i films. The film thickness varies from 2 to 210 ML. 
All of the films were coated in situ with a thin layer of Au 
50 A thick to prevent oxidation of ultrathin Fe;Si films. 
The magnetization was measured at room temperature 
(300 K) by using an alternating-gradient force magneto- 
meter, and at 10 K by using a commercial superconducting 
quantum interference device magnetometer. Sizes of the 
G&As 
!Zinc blende) 
I-’ CJ 
i 
.” d
a = 5.6533 ii 
Fe$i 
i.D03) 
T 
a 
III 
0 
a = 5.64 A 
FIG. I. (001 j unreconstructed surface of GaAs and Fe,% with their 
respective lattice constants of bulk crystal structures. 
6766 J. Appl. Phys. 73 (7 O), 15 May 1993 0021-6979/93/106766-03$06.00 @ 1993 American institute of Physics 6766 
Downloaded 12 Oct 2006 to 129.93.16.206. Redistribution subject to AIP license or copyright, see http://jap.aip.org/jap/copyright.jsp
8 
t=zML 
_ (6 4 
-it3 &~$s=- ^ 
T==lOK *~::. .‘,- ’ . ..y 
*:“c’ 
- z f, 
.I 
.; I :- 
, (4 
I t = 5 ML P I 
i 
(15 Aj &$-@“-- r 
T=lOK .s- y- 
!’ f 
!i: 1 
! ,y 1 
t 1 
I , (4 I 
-9000 -6QQO -3000 0 5300 6000 9000 
2 ! %.ez+l. Cd) 
-150 -100 -50 0 50 100 150 
FIG. 2. Hysteresis loops of epitaxial ultrathin Fe& films on GaAs (001) 
meawred at 10 K for various film thickness; (a) 2 ML, (b) 5 ML. (c) 10 
ML., and id) CO ML. 
measured samples are -5 mm x 5 mm. The magnetic field 
was applied in the film plane along the [llO] direction. 
Note that [l 101 of Fe$i is parallel with [l lo] of the GaAs 
buffer layer.7*Y We also measured the samples with the 
magnetic field applied perpendicular to the film plane and 
in the film plane along [lOO].‘O 
RESULTS AND DISCUSSION 
Owing to 3 very small lattice mismatch ( -0.23%)) 
fully strained layers of Fe,Si were grown on GaAs (001). 
From our previous TEM study,’ no misfit dislocation was 
observed in the as-grown samples even for films as thick as 
600 w (210 ML). The cross-section images show clearly 
that sharp interfaces existed between Fe$i and GaAs. As 
indicated by the elongated sharp streaky RHEED patterns, 
an atomically smooth Fe$i surface was obtained even for 
_wowth of 1 h/iL. Moreover, Kikuchi arcs which are indic- 
ative of a well-ordered single crystal were present for films 
with thickness greater than 12 ML. 
The magnetizations (M) versus applied fields (H) 
shown in Figs. 2(a)-2(d) were measured at 10 K with the 
500 500 o T=lOK 
400 l T = 300 K 
300 
0 OU 
0 40 SO 120 160 200 240 
Thiclcness (ML) 
FIG. 3. Magnetic cocrcivity force (H,) vs film thickness of Fe$i mea- 
sured at 10 and 300 K. 
field being parallel to the film plane and along the [ 1101 
direction. Due to the large portion of the sample being 
GaAs substrate which is diamagnetic, the negative slope is 
present in the original magnetization curve. The negative 
slope was corrected by assuming a linear dependence of the 
diamagnetic signal versus the magnetic field. From Fig. 
2(a) of the sample 2 ML thick, it clearly indicates the 
existence of a ferromagnetic state. The magnetic moment 
of these measured sampIes is about 140 emu/g which is 
close to that of bulk Fe$i.” The total weight of eac.h sam- 
ple was estimated by comparing the weight before and after 
etching and subtracting the weight of the Au overcoating. 
As indicated by the behavior of initial magnetization, 
which is almost flat until the external magnetic field ap- 
proaches the magnetic coercivity force (H,), the domain 
wall pinning is very strong in these films. The samples 
exhibit square hysteresis loops except for the film 2 ML 
thick. 
The H,‘s of the films measured with magnetic field 
parallel to the ftlm surface and along [ 1 lo] direction at 10 
and 300 K are shown in Fig. 3. For the thicker films, the 
magnetic coercive forces (H,) are small, similar to that of 
bulk Fe,Si.” Like most thin magnetic films, the H, of FesSi 
films increases with decreasing thickness and reaches a 
maximum for the film 10 ML thick. An H, as high as 500 
Oe at 10 K has been observed. For films with thickness less 
than 10 ML, however, the H,‘s at 10 K, decrease slightly. 
The 5-ML-thick film has He=425 Oe, and the 2-ML-thick 
film has H,=350 Oe. In contrast, the HGs of the 5-ML- 
thick films at 300 K are only a few Oe, The magnetic 
behavior of the ultrathin Fe,Si films with thickness less 
than 10 ML may be strongly affected by the Au film coated 
at the top. 
For the measurement with the magnetic field perpen- 
dicular to the film plane, the magnetization is not saturated 
even under the applied field of 1.4 T. The saturation field 
for these films with shape anisotropy should be - 1.4 T. It 
indicates existence of some in-plane anisotropy. This in- 
plane anisotropy plus the shape anisotropy make the easy 
magnetization of these films parallel to the film surface. 
In summary, we have studied the magnetic properties 
6767 J. Appl. Phys., Vol. 73, No. IO, 15 May 1993 Liou et a/. 6767 
Downloaded 12 Oct 2006 to 129.93.16.206. Redistribution subject to AIP license or copyright, see http://jap.aip.org/jap/copyright.jsp
of ultrathin MBE grown Fe3Si films. The coercivity forces 
of these films increase with decreasing film thickness and 
decrease when the film thickness is less than 10 ML. All 
the samples, except 2-ML-thick film, exhibit square hyster- 
esis loops. We found that all the films are ferromagnetic 
even for films as thin as 2 ML. 
‘A. Y. Cho and P. D. Demiere, J. Appl. Phys. 49, 3328 (1978). 
‘J. i%assies and N. T. Linh, J. Cryst. Growth 56, 25 (1982). 
‘G. A. Prinz and J. J. Krebs, Appl. Phys. Lett. 39, 397 (1981); G. A. 
Prinz, Phys. Rev. Lett. 54, 1051 (1985). 
‘J. P. Harbison, T. Sands, N. Tabatabair. W. Ii. Chan, L. 7. Floroz, and 
6768 J. Appl. Phys., Vol. 73, No. 10, 15 May 1993 
V. G. Keramidas, Appl. Phys. L&t. 53, 1717 (1988). 
‘C, J. Palmstrom, N.?abatabaie, and S. J. Allen, Jr., Appl. Phys. L&t. 
53, 2608 (1988). 
“A. Guivarch, R, Guerin, and M, Secoue, Electron. L&t. 23, 1004 
(19X7). 
‘M. Hong, H. S. Chen, 3. Kwo, A. R. Kortan, J. P. Mannaerts, 8. E. 
Weir, and L. C. Feldman, J.Cryst. Growth 111, 984 (1991). 
‘S. J. Cowdery and F. X. Kayyser, Mater. Res. Bull. 14, 91 (1979). 
“Y F Hsieh, M. Hong, J. Kwo, A. R. Kortdn, H. S. Chen, and J. P. . 
Mannaerts, Inst. Phys. ConE Series No. 120, 95 (19921, 
‘“S H. Liou et al. (unpublished). 
” i. M. Bozorth, Fwromagnetism (Van Nostrand, New York, 1964), 
p. 95. 
Lieu et al. 6768 
Downloaded 12 Oct 2006 to 129.93.16.206. Redistribution subject to AIP license or copyright, see http://jap.aip.org/jap/copyright.jsp


Magnetic properties of epitaxial single crystal ultrathin Fe\u3csub\u3e3\u3c/sub\u3eSi films on GaAs (001)

DigitalCommons@University of Nebraska

University of Nebraska - Lincoln DigitalCommons@University of Nebraska - Lincoln Si-Hwang Liou Publications Research Papers in Physics and Astronomy May 1993 Magnetic properties of epitaxial single crystal ultrathin Fe3Si films on GaAs (001) Sy_Hwang Liou University of Nebraska-Lincoln, sliou@unl.edu S.S. Malhotra University of Nebraska - Lincoln J.X. Shen University of Nebraska - Lincoln M. Hong AT&T Bell Laboratories, Murray Hill, New Jersey J. Kwo AT&T Bell Laboratories, Murray Hill, New Jersey See next page for additional authors Follow this and additional works at: https://digitalcommons.unl.edu/physicsliou  Part of the Physics Commons Liou, Sy_Hwang; Malhotra, S.S.; Shen, J.X.; Hong, M.; Kwo, J.; Chen, H.S.; and Mannaerts, J.P., "Magnetic properties of epitaxial single crystal ultrathin Fe3Si films on GaAs (001)" (1993). Si-Hwang Liou Publications. 51. https://digitalcommons.unl.edu/physicsliou/51 This Article is brought to you for free and open access by the Research Papers in Physics and Astronomy at DigitalCommons@University of Nebraska - Lincoln. It has been accepted for inclusion in Si-Hwang Liou Publications by an authorized administrator of DigitalCommons@University of Nebraska - Lincoln. Authors Sy_Hwang Liou, S.S. Malhotra, J.X. Shen, M. Hong, J. Kwo, H.S. Chen, and J.P. Mannaerts This article is available at DigitalCommons@University of Nebraska - Lincoln: https://digitalcommons.unl.edu/physicsliou/51 Magnetic properties of epitaxial single crystal ultrathin FesSi films on GaAs (001) S. H. Liou, S, S. Malhotra, and J. X. Shen Behlen Laboratory of Physics and Center for Materials Research and dnalysis, University of Nebraska, Lincoln, Nebraska 68588-N II M. Hong, J. Kwo, H. S. Chen, and J. P. Mannaerts A T&T Bell Laboratories, Murray Hill, Nem Jersey 07914 Magnetic properties of Fe,Si films with thickness from 2 to 210 monolayers (ML) epitaxially grown on GaAs (001) were studied using a superconducting quantum interference device and alternating gradient force magnetometers. Growth of these single-crystal intermetallic compound films were carried out in a multichamber molecular beam epitaxy (MBE) system. The samples were covered in situ with Au 50 A thick to prevent oxidation when the samples were removed from the MBE chamber. All the films are ferromagnetic even for samples as thin as 2 ML. The easy magnetization direction of the films is parallel to the film surface. The magnetic coercivity forces (H,) of the samples increase as the film thickness dec.reases to 10 ML., and then decrease when the film thickness decreases further to 2 ML. INTRODUCTION The integration of magnetic materials with III-V com- pound semiconductors may provide new devices which ex- pand the usages of both classes of materials. Many ele- ments and intermet.allic compounds have been found to grow epitaxially on GaAs.‘-7 Among them Fe, bee Co, and Fe3A11-,Si, films are ferromagnetic at room tempera- ture.“” For Fe or Co on GaAs, interaction and interdiffusion occur at some moderate temperatures of - 200 “C!. In con- trast, the interface between GaAs and the intermetallic compound Fe3A1, .-,Si, is thermodynamically stable for temperatures up to 600 “C!.’ This compound has a BiF3 (DO,) structure with a lattice constant very close to that of GaAs, while bulk GaAs possesses a zinc-blende sttuc- ture with a lattice constant of 5.6533 A, as illustrated in Fig. 1. In this paper, we focused on the magnetic properties of one member of the compound family, FesSi, which has a lattice constant of 5.64 A. The lattice mismatch between Fe$i (OOI) and GaAs (001) is only -0.23%. The stabil- ity at the interface and the small lattice mismatch allow us to prepare epitaxial ultrathin [a few monolayers (ML)] FesSi films on GaAs in a multichamber molecular beam epitaxy (MBE) system.’ We observed that Fe,Si films down to 2 ML. thick are ferromagnetic and the easy mag- netization is in the film plane. The coercivities of the films increase with decreasing thickness, and then decrease when the film thickness is less than 10 ML. EXPERIMENT The MBE system includes two growth chambers; a solid source III-V (GaAs) chamber and a metal deposition chamber which is As free and is equipped with two elec- tron guns and several effusion cells, capable of evaporating materials with high melting points. In this work, Fe and Si were evaporated from electron beam sources with a depo- sition rate of 0.5 A/s for Fe,Si. First, a buffer layer of GaAs 1 ,um thick was grown on a GaAs (001) wafer. The sample was then transferred to the metal deposition cham- ber for the growth of FesSi. A wide range of substrate temperatures between 250 and 500 “C were used. The growth and microstructure of Fe$i films were studied us- ing in situ reflection high energy electron diffraction (RHEED) and transmission electron microscopy (TEM). Rutherford backscattering spectrometty (RBS) was used to calibrate the composition and the thickness of thicker Fe$i films. The film thickness varies from 2 to 210 ML. All of the films were coated in situ with a thin layer of Au 50 A thick to prevent oxidation of ultrathin Fe;Si films. The magnetization was measured at room temperature (300 K) by using an alternating-gradient force magneto- meter, and at 10 K by using a commercial superconducting quantum interference device magnetometer. Sizes of the G&As !Zinc blende) I-’ CJ i .” da = 5.6533 ii Fe$i i.D03) T a III 0 a = 5.64 A FIG. I. (001 j unreconstructed surface of GaAs and Fe,% with their respective lattice constants of bulk crystal structures. 6766 J. Appl. Phys. 73 (7 O), 15 May 1993 0021-6979/93/106766-03$06.00 @ 1993 American institute of Physics 6766 Downloaded 12 Oct 2006 to 129.93.16.206. Redistribution subject to AIP license or copyright, see http://jap.aip.org/jap/copyright.jsp8 t=zML _ (6 4 -it3 &~$s=- ^ T==lOK *~::. .‘,- ’ . ..y *:“c’ - z f, .I .; I :- , (4 I t = 5 ML P I i (15 Aj &$-@“-- r T=lOK .s- y- !’ f !i: 1 ! ,y 1 t 1 I , (4 I -9000 -6QQO -3000 0 5300 6000 9000 2 ! %.ez+l. Cd) -150 -100 -50 0 50 100 150 FIG. 2. Hysteresis loops of epitaxial ultrathin Fe& films on GaAs (001) meawred at 10 K for various film thickness; (a) 2 ML, (b) 5 ML. (c) 10 ML., and id) CO ML. measured samples are -5 mm x 5 mm. The magnetic field was applied in the film plane along the [llO] direction. Note that [l 101 of Fe$i is parallel with [l lo] of the GaAs buffer layer.7*Y We also measured the samples with the magnetic field applied perpendicular to the film plane and in the film plane along [lOO].‘O RESULTS AND DISCUSSION Owing to 3 very small lattice mismatch ( -0.23%)) fully strained layers of Fe,Si were grown on GaAs (001). From our previous TEM study,’ no misfit dislocation was observed in the as-grown samples even for films as thick as 600 w (210 ML). The cross-section images show clearly that sharp interfaces existed between Fe$i and GaAs. As indicated by the elongated sharp streaky RHEED patterns, an atomically smooth Fe$i surface was obtained even for _wowth of 1 h/iL. Moreover, Kikuchi arcs which are indic- ative of a well-ordered single crystal were present for films with thickness greater than 12 ML. The magnetizations (M) versus applied fields (H) shown in Figs. 2(a)-2(d) were measured at 10 K with the 500 500 o T=lOK 400 l T = 300 K 300 0 OU 0 40 SO 120 160 200 240 Thiclcness (ML) FIG. 3. Magnetic cocrcivity force (H,) vs film thickness of Fe$i mea- sured at 10 and 300 K. field being parallel to the film plane and along the [ 1101 direction. Due to the large portion of the sample being GaAs substrate which is diamagnetic, the negative slope is present in the original magnetization curve. The negative slope was corrected by assuming a linear dependence of the diamagnetic signal versus the magnetic field. From Fig. 2(a) of the sample 2 ML thick, it clearly indicates the existence of a ferromagnetic state. The magnetic moment of these measured sampIes is about 140 emu/g which is close to that of bulk Fe$i.” The total weight of eac.h sam- ple was estimated by comparing the weight before and after etching and subtracting the weight of the Au overcoating. As indicated by the behavior of initial magnetization, which is almost flat until the external magnetic field ap- proaches the magnetic coercivity force (H,), the domain wall pinning is very strong in these films. The samples exhibit square hysteresis loops except for the film 2 ML thick. The H,‘s of the films measured with magnetic field parallel to the ftlm surface and along [ 1 lo] direction at 10 and 300 K are shown in Fig. 3. For the thicker films, the magnetic coercive forces (H,) are small, similar to that of bulk Fe,Si.” Like most thin magnetic films, the H, of FesSi films increases with decreasing thickness and reaches a maximum for the film 10 ML thick. An H, as high as 500 Oe at 10 K has been observed. For films with thickness less than 10 ML, however, the H,‘s at 10 K, decrease slightly. The 5-ML-thick film has He=425 Oe, and the 2-ML-thick film has H,=350 Oe. In contrast, the HGs of the 5-ML- thick films at 300 K are only a few Oe, The magnetic behavior of the ultrathin Fe,Si films with thickness less than 10 ML may be strongly affected by the Au film coated at the top. For the measurement with the magnetic field perpen- dicular to the film plane, the magnetization is not saturated even under the applied field of 1.4 T. The saturation field for these films with shape anisotropy should be - 1.4 T. It indicates existence of some in-plane anisotropy. This in- plane anisotropy plus the shape anisotropy make the easy magnetization of these films parallel to the film surface. In summary, we have studied the magnetic properties 6767 J. Appl. Phys., Vol. 73, No. IO, 15 May 1993 Liou et a/. 6767 Downloaded 12 Oct 2006 to 129.93.16.206. Redistribution subject to AIP license or copyright, see http://jap.aip.org/jap/copyright.jspof ultrathin MBE grown Fe3Si films. The coercivity forces of these films increase with decreasing film thickness and decrease when the film thickness is less than 10 ML. All the samples, except 2-ML-thick film, exhibit square hyster- esis loops. We found that all the films are ferromagnetic even for films as thin as 2 ML. ‘A. Y. Cho and P. D. Demiere, J. Appl. Phys. 49, 3328 (1978). ‘J. i%assies and N. T. Linh, J. Cryst. Growth 56, 25 (1982). ‘G. A. Prinz and J. J. Krebs, Appl. Phys. Lett. 39, 397 (1981); G. A. Prinz, Phys. Rev. Lett. 54, 1051 (1985). ‘J. P. Harbison, T. Sands, N. Tabatabair. W. Ii. Chan, L. 7. Floroz, and 6768 J. Appl. Phys., Vol. 73, No. 10, 15 May 1993 V. G. Keramidas, Appl. Phys. L&t. 53, 1717 (1988). ‘C, J. Palmstrom, N.?abatabaie, and S. J. Allen, Jr., Appl. Phys. L&t. 53, 2608 (1988). “A. Guivarch, R, Guerin, and M, Secoue, Electron. L&t. 23, 1004 (19X7). ‘M. Hong, H. S. Chen, 3. Kwo, A. R. Kortan, J. P. Mannaerts, 8. E. Weir, and L. C. Feldman, J.Cryst. Growth 111, 984 (1991). ‘S. J. Cowdery and F. X. Kayyser, Mater. Res. Bull. 14, 91 (1979). “Y F Hsieh, M. Hong, J. Kwo, A. R. Kortdn, H. S. Chen, and J. P. . Mannaerts, Inst. Phys. ConE Series No. 120, 95 (19921, ‘“S H. Liou et al. (unpublished). ” i. M. Bozorth, Fwromagnetism (Van Nostrand, New York, 1964), p. 95. Lieu et al. 6768 Downloaded 12 Oct 2006 to 129.93.16.206. Redistribution subject to AIP license or copyright, see http://jap.aip.org/jap/copyright.jsp

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Magnetic properties of epitaxial single crystal ultrathin Fe\u3csub\u3e3\u3c/sub\u3eSi films on GaAs (001)

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