421 research outputs found

    Low-noise design issues for analog front-end electronics in 130 nm and 90 nm CMOS technologies

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    Deep sub-micron CMOS technologies provide wellestablished solutions to the implementation of low-noise front-end electronics in various detector applications. The IC designers’ effort is presently shifting to 130 nm CMOS technologies, or even to the next technology node, to implement readout integrated circuits for silicon strip and pixel detectors, in view of future HEP applications. In this work the results of noise measurements carried out on CMOS devices in 130 nm and 90 nm commercial processes are presented. The behavior of the 1/f and white noise terms is studied as a function of the device polarity and of the gate length and width. The study is focused on low current density applications where devices are biased in weak or moderate inversion. Data obtained from the measurements provide a powerful tool to establish design criteria in nanoscale CMOS processes for detector front-ends in LHC upgrades

    MAPS in 130 nm triple well CMOS technology for HEP applications

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    Deep N-well CMOS monolithic active pixel sensors (DNWMAPS) represent an alternative approach to signal processing in pixellated detectors for high energy physics experiments. Based on different resolution constraints, two prototype MAPS, suitable for applications requiring different detector pitch, have been developed and fabricated in 130 nm triple well CMOS technology. This work presents experimental results from the characterization of some test structures together with TCAD and Monte Carlo simulations intended to study the device properties in terms of charge diffusion and charge sharing among pixels

    A 64k pixel CMOS-DEPFET module for the soft X-rays DSSC imager operating at MHz-frame rates

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    : The 64k pixel DEPFET module is the key sensitive component of the DEPFET Sensor with Signal Compression (DSSC), a large area 2D hybrid detector for capturing and measuring soft X-rays at the European XFEL. The final 1-megapixel camera has to detect photons with energies between [Formula: see text] and [Formula: see text], and must provide a peak frame rate of [Formula: see text] to cope with the unique bunch structure of the European XFEL. This work summarizes the functionalities and properties of the first modules assembled with full-format CMOS-DEPFET arrays, featuring [Formula: see text] hexagonally-shaped pixels with a side length of 136 μm. The pixel sensors utilize the DEPFET technology to realize an extremely low input capacitance for excellent energy resolution and, at the same time, an intrinsic capability of signal compression without any gain switching. Each pixel of the readout ASIC includes a DEPFET-bias current cancellation circuitry, a trapezoidal-shaping filter, a 9-bit ADC and a 800-word long digital memory. The trimming, calibration and final characterization were performed in a laboratory test-bench at DESY. All detector features are assessed at [Formula: see text]. An outstanding equivalent noise charge of [Formula: see text]e-rms is achieved at 1.1-MHz frame rate and gain of 26.8 Analog-to-Digital Unit per keV ([Formula: see text]). At [Formula: see text] and [Formula: see text], a noise of [Formula: see text] e-rms and a dynamic range of [Formula: see text] are obtained. The highest dynamic range of [Formula: see text] is reached at [Formula: see text] and [Formula: see text]. These values can fulfill the specification of the DSSC project

    Cosmic Antihelium Nuclei Sensitivity of the GAPS Experiment

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    The General Antiparticle Spectrometer (GAPS) is an Antarctic balloon experiment designed for low-energy (0.1-0.3 GeV/nn) cosmic antinuclei as signatures of dark matter annihilation or decay. GAPS is optimized to detect low-energy antideuterons, as well as to provide unprecedented sensitivity to low-energy antiprotons and antihelium nuclei. The novel GAPS antiparticle detection technique, based on the formation, decay, and annihilation of exotic atoms, provides greater identification power for these low-energy antinuclei than previous magnetic spectrometer experiments. This work reports the sensitivity of GAPS to detect antihelium-3 nuclei, based on full instrument simulation, event reconstruction, and realistic atmospheric influence simulations. The report of antihelium nuclei candidate events by AMS-02 has generated considerable interest in antihelium nuclei as probes of dark matter and other beyond the Standard Model theories. GAPS is in a unique position to detect or set upper limits on the cosmic antihelium nuclei flux in an energy range that is essentially free of astrophysical background. In three long-duration balloon flights, GAPS will be sensitive to an antihelium flux on the level of 1.31.2+4.5106m2sr1s1(GeV/n)11.3^{+4.5}_{-1.2}\cdot 10^{-6}\mathrm{m^{-2}sr^{-1}s^{-1}}(\mathrm{GeV}/n)^{-1} (95% CL) in the energy range of 0.11-0.3 GeV/nn, opening a new window on rare cosmic physics.Comment: 12 pages, 5 figure

    Megahertz-rate ultrafast X-ray scattering and holographic imaging at the European XFEL

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    The advent of X-ray free-electron lasers (XFELs) has revolutionized fundamental science, from atomic to condensed matter physics, from chemistry to biology, giving researchers access to X-rays with unprecedented brightness, coherence and pulse duration. All XFEL facilities built until recently provided X-ray pulses at a relatively low repetition rate, with limited data statistics. Here, results from the first megahertz-repetition-rate X-ray scattering experiments at the Spectroscopy and Coherent Scattering (SCS) instrument of the European XFEL are presented. The experimental capabilities that the SCS instrument offers, resulting from the operation at megahertz repetition rates and the availability of the novel DSSC 2D imaging detector, are illustrated. Time-resolved magnetic X-ray scattering and holographic imaging experiments in solid state samples were chosen as representative, providing an ideal test-bed for operation at megahertz rates. Our results are relevant and applicable to any other non-destructive XFEL experiments in the soft X-ray range

    Design of analog front-ends for the RD53 demonstrator chip

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    The RD53 collaboration is developing a large scale pixel front-end chip, which will be a tool to evaluate the performance of 65 nm CMOS technology in view of its application to the readout of the innermost detector layers of ATLAS and CMS at the HL-LHC. Experimental results of the characterization of small prototypes will be discussed in the frame of the design work that is currently leading to the development of the large scale demonstrator chip RD53A to be submitted in early 2017. The paper is focused on the analog processors developed in the framework of the RD53 collaboration, including three time over threshold front-ends, designed by INFN Torino and Pavia, University of Bergamo and LBNL and a zero dead time front-end based on flash ADC designed by a joint collaboration between the Fermilab and INFN. The paper will also discuss the radiation tolerance features of the front-end channels, which were exposed to up to 800 Mrad of total ionizing dose to reproduce the system operation in the actual experiment
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