Role of adsorption kinetics in the low-temperature Si growth by gas-source molecular beam epitaxy: In situ observations and detailed modeling of the growth

科研費報告書収録論文(課題番号:12650025・基盤研究(C)(2)・H12～H13/研究代表者:末光, 眞希/有機ケイ素を用いたSiCエピタキシャル成長の表面化学

Low-temperature formation of an interfacial buffer layer using monomethylsilane for 3C-SiC/Si(100) heteroepitaxy

科研費報告書収録論文(課題番号:12650025・基盤研究(C)(2)・H12～H13/研究代表者:末光, 眞希/有機ケイ素を用いたSiCエピタキシャル成長の表面化学

Mode transition between growth and decomposition of oxides on Si(001): Kinetically determined critical coverage for oxidation

科研費報告書収録論文(課題番号:12650025・基盤研究(C)(2)・H12～H13/研究代表者:末光, 眞希/有機ケイ素を用いたSiCエピタキシャル成長の表面化学

In situ SR-XPS observation of Ni-assisted low-temperature formation of epitaxial graphene on 3C-SiC/Si

Low-temperature (~1073 K) formation of graphene was performed on Si substrates by using an ultrathin (2 nm) N

Surface Chemistry Involved in Epitaxy of Graphene on 3C-SiC(111)/Si(111)

Surface chemistry involved in the epitaxy of graphene by sublimating Si atoms from the surface of epitaxial 3C-SiC(111) thin films on Si(111) has been studied. The change in the surface composition during graphene epitaxy is monitored by in situ temperature-programmed desorption spectroscopy using deuterium as a probe (D2-TPD) and complementarily by ex situ Raman and C1s core-level spectroscopies. The surface of the 3C-SiC(111)/Si(111) is Si-terminated before the graphitization, and it becomes C-terminated via the formation of C-rich (6√3 × 6√3)R30° reconstruction as the graphitization proceeds, in a similar manner as the epitaxy of graphene on Si-terminated 6H-SiC(0001) proceeds