320 research outputs found
Conductance statistics in small insulating GaAs:Si wires at low temperature. II. Experimental study
We have observed reproducible conductance fluctuations at low temperature in
a small GaAs:Si wire driven across the Anderson transition by the application
of a gate voltage. We analyse quantitatively the log-normal conductance
statistics in terms of truncated quantum fluctuations. Quantum fluctuations due
to small changes of the electron energy (controlled by the gate voltage) cannot
develop fully due to identified geometrical fluctuations of the resistor
network describing the hopping through the sample.
The evolution of the fluctuations versus electron energy and magnetic field
shows that the fluctuations are non-ergodic, except in the critical insulating
region of the Anderson transition, where the localization length is larger than
the distance between Si impurities.
The mean magnetoconductance is in good accordance with simulations based on
the Forward-Directed-Paths analysis, i.e. it saturates to as decreases over orders of
magnitude in the strongly localized regime.Comment: Email contact: [email protected]
Hepatitis C virus infection and related liver disease: the quest for the best animal model
Hepatitis C virus (HCV) is a major cause of cirrhosis and hepatocellular carcinoma (HCC) making the virus the most common cause of liver failure and transplantation. HCV is estimated to chronically affect 130 million individuals and to lead to more than 350,000 deaths per year worldwide. A vaccine is currently not available. The recently developed direct acting antivirals (DAAs) have markedly increased the efficacy of the standard of care but are not efficient enough to completely cure all chronically infected patients and their toxicity limits their use in patients with advanced liver disease, co-morbidity or transplant recipients. Because of the host restriction, which is limited to humans and non-human primates, in vivo study of HCV infection has been hampered since its discovery more than 20 years ago. The chimpanzee remains the most physiological model to study the innate and adaptive immune responses, but its use is ethically difficult and is now very restricted and regulated. The development of a small animal model that allows robust HCV infection has been achieved using chimeric liver immunodeficient mice, which are therefore not suitable for studying the adaptive immune responses. Nevertheless, these models allowed to go deeply in the comprehension of virus-host interactions and to assess different therapeutic approaches. The immunocompetent mouse models that were recently established by genetic humanization have shown an interesting improvement concerning the study of the immune responses but are still limited by the absence of the complete robust life cycle of the virus. In this review, we will focus on the relevant available animal models of HCV infection and their usefulness for deciphering the HCV life cycle and virus-induced liver disease, as well as for the development and evaluation of new therapeutics. We will also discuss the perspectives on future immunocompetent mouse models and the hurdles to their development
Tuning Energy Relaxation along Quantum Hall Channels
The chiral edge channels in the quantum Hall regime are considered ideal
ballistic quantum channels, and have quantum information processing
potentialities. Here, we demonstrate experimentally, at filling factor 2, the
efficient tuning of the energy relaxation that limits quantum coherence and
permits the return toward equilibrium. Energy relaxation along an edge channel
is controllably enhanced by increasing its transmission toward a floating ohmic
contact, in quantitative agreement with predictions. Moreover, by forming a
closed inner edge channel loop, we freeze energy exchanges in the outer
channel. This result also elucidates the inelastic mechanisms at work at
filling factor 2, informing us in particular that those within the outer edge
channel are negligible.Comment: 8 pages including supplementary materia
Noise dephasing in the edge states of the Integer Quantum Hall regime
An electronic Mach Zehnder interferometer is used in the integer quantum hall
regime at filling factor 2, to study the dephasing of the interferences. This
is found to be induced by the electrical noise existing in the edge states
capacitively coupled to each others. Electrical shot noise created in one
channel leads to phase randomization in the other, which destroys the
interference pattern. These findings are extended to the dephasing induced by
thermal noise instead of shot noise: it explains the underlying mechanism
responsible for the finite temperature coherence time of the
edge states at filling factor 2, measured in a recent experiment. Finally, we
present here a theory of the dephasing based on Gaussian noise, which is found
in excellent agreement with our experimental results.Comment: ~4 pages, 4 figure
Strong back-action of a linear circuit on a single electronic quantum channel
What are the quantum laws of electricity in mesoscopic circuits? This very
fundamental question has also direct implications for the quantum engineering
of nanoelectronic devices. Indeed, when a quantum coherent conductor is
inserted into a circuit, its transport properties are modified. In particular,
its conductance is reduced because of the circuit back-action. This phenomenon,
called environmental Coulomb blockade, results from the granularity of charge
transfers across the coherent conductor. Although extensively studied for a
tunnel junction in a linear circuit, it is only fully understood for arbitrary
short coherent conductors in the limit of small circuit impedances and small
conductance reduction. Here, we investigate experimentally the strong
back-action regime, with a conductance reduction of up to 90%. This is achieved
by embedding a single quantum channel of tunable transmission in an adjustable
on-chip circuit of impedance comparable to the resistance quantum
at microwave frequencies. The experiment reveals important deviations from
calculations performed in the weak back-action framework, and matches with
recent theoretical results. From these measurements, we propose a generalized
expression for the conductance of an arbitrary quantum channel embedded in a
linear circuit.Comment: 11 pages including supplementary information, to be published in
Nature Physic
Robust quantum coherence above the Fermi sea
In this paper we present an experiment where we measured the quantum
coherence of a quasiparticle injected at a well-defined energy above the Fermi
sea into the edge states of the integer quantum Hall regime. Electrons are
introduced in an electronic Mach-Zehnder interferometer after passing through a
quantum dot that plays the role of an energy filter. Measurements show that
above a threshold injection energy, the visibility of the quantum interferences
is almost independent of the energy. This is true even for high energies, up to
130~eV, well above the thermal energy of the measured sample. This result
is in strong contradiction with our theoretical predictions, which instead
predict a continuous decrease of the interference visibility with increasing
energy. This experiment raises serious questions concerning the understanding
of excitations in the integer quantum Hall regime
Tuning decoherence with a voltage probe
We present an experiment where we tune the decoherence in a quantum
interferometer using one of the simplest object available in the physic of
quantum conductors : an ohmic contact. For that purpose, we designed an
electronic Mach-Zehnder interferometer which has one of its two arms connected
to an ohmic contact through a quantum point contact. At low temperature, we
observe quantum interference patterns with a visibility up to 57%. Increasing
the connection between one arm of the interferometer to the floating ohmic
contact, the voltage probe, reduces quantum interferences as it probes the
electron trajectory. This unique experimental realization of a voltage probe
works as a trivial which-path detector whose efficiency can be simply tuned by
a gate voltage
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