2,182 research outputs found
Spinon-Holon binding in model
Using a phenomenological model, we discuss the consequences of spinon-holon
binding in the U(1) slave-boson approach to model. Within a small
( hole concentration) expansion, we show that spinon-holon binding produces
a pseudo-gap normal state with a segmented Fermi surface and the
superconducting state is formed by opening an "additional" d-wave gap on the
segmented Fermi surface. The d-wave gap merge with the pseudo-gap smoothly as
temperature . The quasi-particles in the superconducting state are
coupled to external electromagnetic field with a coupling constant of order
where , depending on the strength of the
effective spinon-holon binding potential.Comment: 9 pages, 3 figure
Spin-Hall Conductivity in Electron-Phonon Coupled Systems
We derive the ac spin-Hall conductivity of
two-dimensional spin-orbit coupled systems interacting with dispersionless
phonons of frequency . For the linear Rashba model we show that the
electron-phonon contribution to the spin-vertex corrections breaks the
universality of at low-frequencies and provides a
non-trivial renormalization of the interband resonance. On the contrary, in a
generalized Rashba model for which the spin-vertex contributions are absent,
the coupling to the phonons enters only through the self-energy, leaving the
low frequency behavior of unaffected by the
electron-phonon interaction.Comment: 4 pages, 3 figures, version as printe
Nonlinear thermal control in an N-terminal junction
We demonstrate control over heat flow in an N-terminal molecular junction.
Using simple model Hamiltonians we show that the heat current through two
terminals can be tuned, switched, and amplified, by the temperature and
coupling parameters of external gating reservoirs. We discuss two models: A
fully harmonic system, and a model incorporating anharmonic interactions. For
both models the control reservoirs induce thermal fluctuations of the
transition elements between molecular vibrational states. We find that a fully
harmonic model does not show any controllability, while for an anharmonic
system the conduction properties of the junction strongly depend on the
parameters of the gates. Realizations of the model system within nanodevices
and macromolecules are discussed
Enhanced carrier scattering rates in dilute magnetic semiconductors with correlated impurities
In III-V dilute magnetic semiconductors (DMSs) such as GaMnAs,
the impurity positions tend to be correlated, which can drastically affect the
electronic transport properties of these materials. Within the memory function
formalism we have derived a general expression for the current relaxation
kernel in spin and charge disordered media and have calculated spin and charge
scattering rates in the weak-disorder limit. Using a simple model for magnetic
impurity clustering, we find a significant enhancement of the charge
scattering. The enhancement is sensitive to cluster parameters and may be
controllable through post-growth annealing.Comment: 4 pages, 3 figure
Many body effects in finite metallic carbon nanotubes
The non homogeneity of the charge distribution in a carbon nanotube leads to
the formation of an excitonic resonance, in a similar way to the one observed
in X-ray absorption in metals. As a result, a positive anomaly at low bias
appears in the tunnelling density of states. This effect depends on the
screening of the electron--electron interactions by metallic gates, and it
modifies the coupling of the nanotube to normal and superconducting electrodes.Comment: 5 page
Transport properties in correlated systems: An analytical model
Several studies have so far investigated transport properties of strongly
correlated systems. Interesting features of these materials are the lack of
resistivity saturation well beyond the Mott-Ioffe-Regel limit and the scaling
of the resistivity with the hole density in underdoped cuprates. Due to the
strongly correlated nature of these materials, mainly numerical techniques have
been employed. A key role in this regards is thought to be played by the
continuous transfer of spectral weight from coherent to incoherent states. In
this paper we employ a simple analytical expression for the electronic Green's
function to evaluate both quasi-particle and transport properties in correlated
systems. Our analytical approach permits to enlighten the specific role of the
spectral transfer due to the correlation on different features. In particular
we investigate the dependence of both quasi-particle and transport scattering
rate on the correlation degree and the criterion for resistivity saturation.
systems.Comment: 11 pages, 8 figures. New version correcting a mistake of the previous
version and added figure
Dielectric function of the semiconductor hole liquid: Full frequency and wave vector dependence
We study the dielectric function of the homogeneous semiconductor hole liquid
of p-doped bulk III-V zinc-blende semiconductors within random phase
approximation. The single-particle physics of the hole system is modeled by
Luttinger's four-band Hamiltonian in its spherical approximation. Regarding the
Coulomb-interacting hole liquid, the full dependence of the zero-temperature
dielectric function on wave vector and frequency is explored. The imaginary
part of the dielectric function is analytically obtained in terms of
complicated but fully elementary expressions, while in the result for the real
part nonelementary one-dimensional integrations remain to be performed. The
correctness of these two independent calculations is checked via Kramers-Kronig
relations.
The mass difference between heavy and light holes, along with variations in
the background dielectric constant, leads to dramatic alternations in the
plasmon excitation pattern, and generically, two plasmon branches can be
identified. These findings are the result of the evaluation of the full
dielectric function and are not accessible via a high-frequency expansion. In
the static limit a beating of Friedel oscillations between the Fermi wave
numbers of heavy and light holes occurs.Comment: 16 pages, 11 figures included. Update: Minor additions and
adjustments, published versio
Polarons in semiconductor quantum-dots and their role in the quantum kinetics of carrier relaxation
While time-dependent perturbation theory shows inefficient carrier-phonon
scattering in semiconductor quantum dots, we demonstrate that a quantum kinetic
description of carrier-phonon interaction predicts fast carrier capture and
relaxation. The considered processes do not fulfill energy conservation in
terms of free-carrier energies because polar coupling of localized quantum-dot
states strongly modifies this picture.Comment: 6 pages, 6 figures, accepted for publication in Phys.Rev.
Small polarons in dilute gas Bose-Einstein condensates
A neutral impurity atom immersed in a dilute Bose-Einstein condensate (BEC)
can have a bound ground state in which the impurity is self-localized. In this
small polaron-like state, the impurity distorts the density of the surrounding
BEC, thereby creating the self-trapping potential minimum. We describe the
self-localization in a strong coupling approach
Variational solution of the T-matrix integral equation
We present a variational solution of the T-matrix integral equation within a
local approximation. This solution provides a simple form for the T matrix
similar to Hubbard models but with the local interaction depending on momentum
and frequency. By examining the ladder diagrams for irreducible polarizability,
a connection between this interaction and the local-field factor is
established. Based on the obtained solution, a form for the T-matrix
contribution to the electron self-energy in addition to the GW term is
proposed. In the case of the electron-hole multiple scattering, this form
allows one to avoid double counting.Comment: 7 pages, 7 figure
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