EFFECT OF ANNEALING TEMPERATURE ON THE OPTICAL AND STRUCTURAL PROPERTIES OF DIP-COATED Al2O3 THIN FILMS PREPARED BY SOL–GEL ROUTE

Thin films of Al2O3 were prepared by the sol–gel process. Dip-coating technique was used for deposition of the Al2O3 thin films onto glass substrates. Optical and structural properties of the films were investigated with respect to the annealing temperature (100–500°C). The structure of these films was determined by X-ray diffraction (XRD). Scanning electron microscopy (SEM) was performed for the analysis of surface morphology. For determination of the optical constants of Al2O3 thin films, UV-Visible spectrophotometry measurements were carried out. Annealing temperature affects the structural and optical properties of the Al2O3 thin films. The refractive index and extinction coefficient of the films at 550 nm wavelength increase from 1.56 to 1.66, and from 3.41 × 10-5 to 5.54 × 10-5, respectively while optical band gap and thickness of the films decrease from 4.15 eV to 4.11 eV, and 360 nm to 260 nm, respectively, by increasing annealing temperature from 100°C to 500°C.Aluminum oxide, sol–gel, thin films, optical constants

Two novel genomospecies in the Agrobacterium tumefaciens species complex associated with rose crown gall

In this study, we explored the pathogenicity and phylogenetic position of Agrobacterium spp. strains isolated from crown gall tissues on annual, perennial, and ornamental plants in Iran. Of the 43 strains studied, 10 strains were identified as Allorhizobium vitis (formerly Agrobacterium vitis) using the species-specific primer pair PGF/PGR. Thirty-three remaining strains were studied using multilocus sequence analysis of four housekeeping genes (i.e., atpD, gyrB, recA, and rpoB), from which seven strains were identified as A. larrymoorei and one strain was identified as A. rubi (Rer); the remaining 25 strains were scattered within the A. tumefaciens species complex. Two strains were identified as genomospecies 1 (G1), seven strains were identified as A. radiobacter (G4), seven strains were identified as A. deltaense (G7), two strains were identified as A. nepotum (G14), and one strain was identified as "A. viscosum" (G15). The strains Rnr, Rnw, and Rew as well as the two strains OT33 and R13 all isolated from rose and the strain Ap1 isolated from apple were clustered in three atypical clades within the A. tumefaciens species complex. All but eight strains (i.e., Nec10, Ph38, Ph49, fic9, Fic72, R13, OT33, and Ap1) were pathogenic on tomato and sunflower seedlings in greenhouse conditions, whereas all but three strains (i.e., fic9, Fic72, and OT33) showed tumorigenicity on carrot root discs. The phylogenetic analysis and nucleotide diversity statistics suggested the existence of two novel genomospecies within the A. tumefaciens species complex, which we named "G19" and "G20." Hence, we propose the strains Rew, Rnw, and Rnr as the members of "G19" and the strains R13 and OT33 as the members of G20, whereas the phylogenetic status of the atypical strain Ap1 remains undetermined

Linear and nonlinear optical properties of dewetted SiGe islands

We propose to exploit the natural mechanical instability of thin solid films to form regular patterns of monocrystalline atomically smooth silicon and germanium nanostructures that cannot be realized with conventional methods. The solid-state dewetting dynamics is guided by pre-patterning the sample by a combination of electron-beam lithography and reactive-ion etching, obtaining precise control over number, size, shape, and relative position of the final Si1-xGex structures. Here we describe our progress in the spectroscopic investigation of individual dewetted Si1-xGex nanoislands: in the linear regime, bright Mie-type localized resonances are detected in the visible spectral range, with a spectral position that can be tuned by modifying the size of the nanoparticles. In the non-linear regime, instead, sizable third-harmonic generation is observed at the level of single islands. We believe that these results will be pivotal to a novel approach in spectral filtering, sensing and structural color with all-dielectric photonic devices

Engineering of the spin on dopant process on silicon on insulator substrate

We report on a systematic analysis of phosphorus diffusion in silicon on insulator thin film via spin-on-dopant process (SOD). This method is used to provide an impurity source for semiconductor junction fabrication. The dopant is first spread into the substrate via SOD and then diffused by a rapid thermal annealing process. The dopant concentration and electron mobility were characterized at room and low temperature by four-probe and Hall bar electrical measurements. Time-of-flight-secondary ion mass spectroscopy was performed to estimate the diffusion profile of phosphorus for different annealing treatments. We find that a high phosphorous concentration (greater than 1020 atoms cm-3) with a limited diffusion of other chemical species and allowing to tune the electrical properties via annealing at high temperature for short time. The ease of implementation of the process, the low cost of the technique, the possibility to dope selectively and the uniform doping manufactured with statistical process control show that the methodology applied is very promising as an alternative to the conventional doping methods for the implementation of optoelectronic devices

Realization of electron vortices with large orbital angular momentum using miniature holograms fabricated by electron beam lithography

Free electron beams that carry high values of orbital angular momentum (OAM) possess large magnetic moments along the propagation direction. This makes them an ideal probe for measuring the electronic and magnetic properties of materials, as well as for fundamental experiments in magnetism. However, their generation requires the use of complex diffractive elements, which usually take the form of nano-fabricated holograms. Here, we show how the limitations of the current fabrication of such holograms can be overcome by using electron beam lithography. We demonstrate experimentally the realization of an electron vortex beam with the largest OAM value that has yet been reported to the first diffraction order (L = 1000 ℏ), paving the way for even more demanding demonstrations and applications of electron beam shaping