104 research outputs found

    Activated O2 dissociation and formation of oxide islands on the Be(0001) surface: Another atomistic model for metal oxidation

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    By simulating the dissociation of O2 molecules on the Be(0001) surface using the first-principles molecular dynamics approach, we propose a new atomistic model for the surface oxidation of sp metals. In our model, only the dissociation of the first oxygen molecule needs to overcome an energy barrier, while the subsequent oxygen molecules dissociate barrierlessly around the adsorption area. Consequently, oxide islands form on the metal surface, and grow up in a lateral way. We also discover that the firstly dissociated oxygen atoms are not so mobile on the Be(0001) surface, as on the Al(111) surface. Our atomistic model enlarges the knowledge on metal surface oxidations by perfectly explaining the initial stage during the surface oxidation of Be, and might be applicable to some other sp metal surfaces.Comment: 5 pages, 4 figure

    Dissociation of O2 molecules on strained Pb(111) surfaces

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    By performing first-principles molecular dynamics calculations, we systematically simulate the adsorption behavior of oxygen molecules on the clean and strained Pb(111) surfaces. The obtained molecular adsorption precursor state, and the activated dissociation process for oxygen molecules on the clean Pb surface are in good agreements with our previous static calculations, and perfectly explains previous experimental observations [Proc. Natl. Acad. Sci. U.S.A. 104, 9204 (2007)]. In addition, we also study the influences of surface strain on the dissociation behaviors of O2 molecules. It is found that on the compressed Pb(111) surfaces with a strain value of larger than 0.02, O2 molecules will not dissociate at all. And on the stretched Pb(111) surfaces, O2 molecules become easier to approach, and the adsorption energy of the dissociated oxygen atoms is larger than that on the clean Pb surface

    Growth, electronic properties and reactivity of vanadium deposited onto a thin alumina film

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    The interaction of metals with oxide surfaces plays an important role in the manner of growth of the metal/oxide interface and eventually for the electronic properties and chemical reactivity of the resultant surface. We have investigated such effects for vanadium on alumina. By using a thin alumina film grown on a NiAl(110) as a model substrate, we were able to apply scanning tunneling microscopy (STM) as well as electron spectroscopic techniques without charging problems. According to our STM results, vanadium deposition at 300 K results in the formation of small thin particles/islands partly incorporated into the film at low coverages. With increasing coverage three-dimensional growth is found. The thermal stability and the growth behaviour of these nuclei at elevated deposition temperatures (≥600 K) are in agreement with a strong metal substrate interaction. In the coverage regime below 0.1 ML, X-ray photoelectron and X-ray absorption spectroscopy data provide evidence that the deposits are oxidized to Vx+, 1<x<2. Furthermore, we have studied the interaction at 720 K and in an ambient atmosphere of oxygen in order to check how vanadium reacts with the alumina film under more severe conditions. In fact, a thickening of the alumina film has been observed, which we ascribe to a catalytic effect of vanadia on the alumina film growth

    Alkane Trapping onto Structured Alkane Monolayers on Pt(111) at Low Temperature

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    Temperature Effects on Vanadium Overlayers on the TiO 2

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