7 research outputs found
Gas dependent hysteresis in MoS field effect transistors
We study the effect of electric stress, gas pressure and gas type on the
hysteresis in the transfer characteristics of monolayer molybdenum disulfide
(MoS2) field effect transistors. The presence of defects and point vacancies in
the MoS2 crystal structure facilitates the adsorption of oxygen, nitrogen,
hydrogen or methane, which strongly affect the transistor electrical
characteristics. Although the gas adsorption does not modify the conduction
type, we demonstrate a correlation between hysteresis width and adsorption
energy onto the MoS2 surface. We show that hysteresis is controllable by
pressure and/or gas type. Hysteresis features two well-separated current
levels, especially when gases are stably adsorbed on the channel, which can be
exploited in memory devices.Comment: 8 pages, 5 figure