Laser drilling of via micro-holes in single-crystal semiconductor substrates using a 1070 nm fibre laser with millisecond pulse widths

Micro-machining of semiconductors is relevant to fabrication challenges within the semiconductor industry. For via holes for solar cells, laser drilling potentially avoids deep plasma etching which requires sophisticated equipment and corrosive, high purity gases. Other applications include backside loading of cold atoms into atom chips and ion traps for quantum physics research, for which holes through the semiconductor substrate are needed. Laser drilling, exploiting the melt ejection material removal mechanism, is used industrially for drilling hard to machine materials such as superalloys. Lasers of the kind used in this work typically form holes with diameters of 100’s of microns and depths of a few millimetres in metals. Laser drilling of semiconductors typically uses short pulses of UV or long wavelength IR to achieve holes as small as 50 microns. A combination of material processes occurs including laser absorption, heating, melting, vaporization with vapour and dust particle ejection and resolidification. An investigation using materials with different fundamental material parameters allows the suitability of any given laser for the processing of semiconductors to be determined. We report results on the characterization of via holes drilled using a 2000 W maximum power 1070 nm fibre laser with 1-20 ms pulses using single crystal silicon, gallium arsenide and sapphire. Holes were characterised in cross-section and plan view. Significantly, relatively long pulses were effective even for wide bandgap substrates which are nominally transparent at 1070 nm. Examination of drilled samples revealed holes had been successfully generated in all materials via melt ejection

Laser drilling of micro-holes in single crystal silicon, indium phosphide and indium antimonide using a continuous wave (CW) 1070 nm fibre laser with millisecond pulse widths

The laser micro-drilling of “thru” holes, also known as via holes, in Si, InP and InSb semiconductor wafers was studied using millisecond pulse lengths from an IPG Laser Model YLR-2000 CW multimode 2 kW Ytterbium Fibre Laser and a JK400 (400 W) fibre laser, both with 1070 nm wavelength. The flexibility of this laser wavelength and simple pulsing scheme were demonstrated for semiconductor substrates of narrow (InSb Eg 0.17 eV) and wide (InP Eg 1.35 eV)) room-temperature bandgap, Eg, with respect to the photon energy of 1.1 eV. Optical microscopy and cross-sectional analysis were used to quantify hole dimensions and the distribution of recast material for all wafers and, for silicon, any microcracking for both (100) and (111) single crystal surface Si wafer orientations. It was found that the thermal diffusivity was not a sufficient parameter for predicting the relative hole sizes for the Si, InP and InSb single crystal semiconductors studied. Detailed observations for Si showed that, between the threshold energies for surface melting and the irradiance for drilling a “thru” hole from the front surface to rear surface, there was a range of irradiances for which micro-cracking occurred near the hole circumference. The directionality and lengths of these microcracks were studied for the (100) and (111) orientations and possible mechanisms for formation were discussed, including the Griffith criterion for microcracks and the failure mechanism of fatigue usually applied to welding of metals. For Si, above the irradiance for formation of a thru-hole, few cracks were observed. Future work will compare similar observations and measurements in other narrow- and wide-bandgap semiconductor wafer substrates. We demonstrated one application of this laser micro-drilling process for the micro-fabrication of a thru hole precisely-located in the centre of a silicon-based atom chip which had been patterned using semiconductor lithographic techniques. The end-user application was a source of magneto-optically trapped (MOT) cold atoms of Rubidium (87Rb) for portable quantum sensing

Laser drilling of microholes in single crystal silicon using continuous wave (CW) 1070 nm fiber lasers with millisecond pulse widths

The laser microdrilling of via holes in Si semiconductor wafers was studied using 1 ms pulses from an Yb fibre laser with 1070 nm wavelength. Optical microscopy and cross‑sectional analysis were used to quantify hole dimensions, the distribution of recast material and any microcracking for both (100) and (111) single crystal surface semiconductor wafer orientations. The flexibility of this laser wavelength and simple pulsing scheme were demonstrated for a range of semiconductor substrates of narrow and wide bandgap including InSb, GaSb, InAs, GaAs, InP and sapphire. Detailed observations for Si showed that, between the threshold energies for surface melting and the irradiance for drilling a “thru” hole from the front surface to rear surface, there was a range of irradiances for which microcracking occurred near the hole circumference. The directionality and lengths of these microcracks were studied for the (100) and (111) orientations and possible mechanisms for formation were discussed, including the Griffith criterion for microcracks and the failure mechanism of fatigue usually applied to welding of metals. Above the irradiance for formation of a thru hole, few cracks were observed. Future work will compare similar observations and measurements in other narrow- and wide-bandgap semiconductor wafer substrates

III-V semiconductor waveguides for photonic functionality at 780 nm

Photonic integrated circuits based on III-V semiconductor polarization-maintaining waveguides were designed and fabricated for the first time for application in a compact cold-atom gravimeter1,2 at an operational wavelength of 780 nm. Compared with optical fiber-based components, semiconductor waveguides achieve very compact guiding of optical signals for both passive functions, such as splitting and recombining, and for active functions, such as switching or modulation. Quantum sensors, which have enhanced sensitivity to a physical parameter as a result of their quantum nature, can be made from quantum gases of ultra-cold atoms. A cloud of ultra-cold atoms may start to exhibit quantum-mechanical properties when it is trapped and cooled using laser cooling in a magneto-optical trap, to reach milli-Kelvin temperatures. The work presented here focuses on the design and fabrication of optical devices for a quantum sensor to measure the acceleration of gravity precisely and accurately. In this case the cloud of ultra-cold atoms consists of rubidium (87Rb) atoms and the sensor exploits the hyperfine structure of the D1 transition, from an outer electronic state of 5 2S ½ to 5 2P3/2 which has an energy of 1.589 eV or 780.241 nm. The short wavelength of operation of the devices dictated stringent requirements on the Molecular Beam Epitaxy (MBE) and device fabrication in terms of anisotropy and smoothness of plasma etch processes, cross-wafer uniformities and alignment tolerances. Initial measurements of the optical loss of the polarization-maintaining waveguide, assuming Fresnel reflection losses only at the facets, suggested a loss of 8 dB cm-1, a loss coefficient, α, of 1.9 (±0.3) cm-1

Near infrared integrated photonic switches for portable quantum sensors

A novel integrated semiconductor photonic switch, based on carrier-induced refractive index changes, has been designed and fabricated for use at near infrared wavelengths (890-920 nm, 750-780 nm and 745-775 nm). These switches are intended for use in quantum sensors which rely on the spectroscopy of caesium, rubidium or potassium atoms respectively. The beam-steering properties of the 890-920 nm device are presented and its extinction ratio measured to be 13.4 dB. This measurement was limited by coupling efficiency. Subsequent changes made to the testing equipment include the implementation of an automated testing routine. This new experimental setup will facilitate the full characterisation of the 890-920 nm device and the newly fabricated optical switches, designed for operation in the wavelength ranges 750-780 nm and 745-775 nm respectively

Laser drilling of microholes in single crystal silicon using continuous wave (CW) 1070 nm fiber lasers with millisecond pulse widths

The laser microdrilling of via holes in Si semiconductor wafers was studied using 1 ms pulses from an Yb fibre laser with 1070 nm wavelength. Optical microscopy and cross‑sectional analysis were used to quantify hole dimensions, the distribution of recast material and any microcracking for both (100) and (111) single crystal surface semiconductor wafer orientations. The flexibility of this laser wavelength and simple pulsing scheme were demonstrated for a range of semiconductor substrates of narrow and wide bandgap including InSb, GaSb, InAs, GaAs, InP and sapphire. Detailed observations for Si showed that, between the threshold energies for surface melting and the irradiance for drilling a “thru” hole from the front surface to rear surface, there was a range of irradiances for which microcracking occurred near the hole circumference. The directionality and lengths of these microcracks were studied for the (100) and (111) orientations and possible mechanisms for formation were discussed, including the Griffith criterion for microcracks and the failure mechanism of fatigue usually applied to welding of metals. Above the irradiance for formation of a thru hole, few cracks were observed. Future work will compare similar observations and measurements in other narrow- and wide-bandgap semiconductor wafer substrates

Finishing the euchromatic sequence of the human genome

The sequence of the human genome encodes the genetic instructions for human physiology, as well as rich information about human evolution. In 2001, the International Human Genome Sequencing Consortium reported a draft sequence of the euchromatic portion of the human genome. Since then, the international collaboration has worked to convert this draft into a genome sequence with high accuracy and nearly complete coverage. Here, we report the result of this finishing process. The current genome sequence (Build 35) contains 2.85 billion nucleotides interrupted by only 341 gaps. It covers ∼99% of the euchromatic genome and is accurate to an error rate of ∼1 event per 100,000 bases. Many of the remaining euchromatic gaps are associated with segmental duplications and will require focused work with new methods. The near-complete sequence, the first for a vertebrate, greatly improves the precision of biological analyses of the human genome including studies of gene number, birth and death. Notably, the human enome seems to encode only 20,000-25,000 protein-coding genes. The genome sequence reported here should serve as a firm foundation for biomedical research in the decades ahead

SARS-CoV-2 Omicron is an immune escape variant with an altered cell entry pathway

Vaccines based on the spike protein of SARS-CoV-2 are a cornerstone of the public health response to COVID-19. The emergence of hypermutated, increasingly transmissible variants of concern (VOCs) threaten this strategy. Omicron (B.1.1.529), the fifth VOC to be described, harbours multiple amino acid mutations in spike, half of which lie within the receptor-binding domain. Here we demonstrate substantial evasion of neutralization by Omicron BA.1 and BA.2 variants in vitro using sera from individuals vaccinated with ChAdOx1, BNT162b2 and mRNA-1273. These data were mirrored by a substantial reduction in real-world vaccine effectiveness that was partially restored by booster vaccination. The Omicron variants BA.1 and BA.2 did not induce cell syncytia in vitro and favoured a TMPRSS2-independent endosomal entry pathway, these phenotypes mapping to distinct regions of the spike protein. Impaired cell fusion was determined by the receptor-binding domain, while endosomal entry mapped to the S2 domain. Such marked changes in antigenicity and replicative biology may underlie the rapid global spread and altered pathogenicity of the Omicron variant

Investigation of hospital discharge cases and SARS-CoV-2 introduction into Lothian care homes

Background The first epidemic wave of severe acute respiratory syndrome coronavirus-2 (SARS-CoV-2) in Scotland resulted in high case numbers and mortality in care homes. In Lothian, over one-third of care homes reported an outbreak, while there was limited testing of hospital patients discharged to care homes. Aim To investigate patients discharged from hospitals as a source of SARS-CoV-2 introduction into care homes during the first epidemic wave. Methods A clinical review was performed for all patients discharges from hospitals to care homes from 1st March 2020 to 31st May 2020. Episodes were ruled out based on coronavirus disease 2019 (COVID-19) test history, clinical assessment at discharge, whole-genome sequencing (WGS) data and an infectious period of 14 days. Clinical samples were processed for WGS, and consensus genomes generated were used for analysis using Cluster Investigation and Virus Epidemiological Tool software. Patient timelines were obtained using electronic hospital records. Findings In total, 787 patients discharged from hospitals to care homes were identified. Of these, 776 (99%) were ruled out for subsequent introduction of SARS-CoV-2 into care homes. However, for 10 episodes, the results were inconclusive as there was low genomic diversity in consensus genomes or no sequencing data were available. Only one discharge episode had a genomic, time and location link to positive cases during hospital admission, leading to 10 positive cases in their care home. Conclusion The majority of patients discharged from hospitals were ruled out for introduction of SARS-CoV-2 into care homes, highlighting the importance of screening all new admissions when faced with a novel emerging virus and no available vaccine

Genomic epidemiology of SARS-CoV-2 in a UK university identifies dynamics of transmission

AbstractUnderstanding SARS-CoV-2 transmission in higher education settings is important to limit spread between students, and into at-risk populations. In this study, we sequenced 482 SARS-CoV-2 isolates from the University of Cambridge from 5 October to 6 December 2020. We perform a detailed phylogenetic comparison with 972 isolates from the surrounding community, complemented with epidemiological and contact tracing data, to determine transmission dynamics. We observe limited viral introductions into the university; the majority of student cases were linked to a single genetic cluster, likely following social gatherings at a venue outside the university. We identify considerable onward transmission associated with student accommodation and courses; this was effectively contained using local infection control measures and following a national lockdown. Transmission clusters were largely segregated within the university or the community. Our study highlights key determinants of SARS-CoV-2 transmission and effective interventions in a higher education setting that will inform public health policy during pandemics.</jats:p