Charge and fluence lifetime measurements of a dc high voltage GaAs photogun at high average current

GaAs-based dc high voltage photoguns used at accelerators with extensive user programs must exhibit long photocathode operating lifetime. Achieving this goal represents a significant challenge for proposed high average current facilities that must operate at tens of milliamperes or more. This paper describes techniques to maintain good vacuum while delivering beam, and techniques that minimize the ill effects of ion bombardment, the dominant mechanism that reduces photocathode yield of a GaAs-based dc high voltage photogun. Experimental results presented here demonstrate enhanced lifetime at high beam currents by: (a) operating with the drive laser beam positioned away from the electrostatic center of the photocathode, (b) limiting the photocathode active area to eliminate photoemission from regions of the photocathode that do not support efficient beam delivery, (c) using a large drive laser beam to distribute ion damage over a larger area, and (d) by applying a relatively low bias voltage to the anode to repel ions created within the downstream beam line. A combination of these techniques provided the best total charge extracted lifetimes in excess of 1000 C at dc beam currents up to 9.5 mA, using green light illumination of bulk GaAs inside a 100 kV photogun

High Voltage Design and Evaluation of Wien Filters for the CEBAF 200 keV Injector Upgrade

High-energy nuclear physics experiments at the Jefferson Lab Continuous Electron Beam Accelerator Facility (CEBAF) require highly spin-polarization electron beams, produced from strained super-lattice GaAs photocathodes, activated to negative electron affinity in a photogun operating at 130 kV dc. A pair of Wien filter spin rotators in the injector defines the orientation of the electron beam polarization at the end station target. An upgrade of the CEBAF injector to better support the upcoming MOLLER experiment requires increasing the electron beam energy to 200 keV, to reduce unwanted helicity correlated intensity and position systematics and provide precise control of the polarization orientation. Our contribution describes design, fabrication and testing of the high voltage system to upgrade the Wien spin rotator to be compatible with the 200 keV beam. This required Solidworks modeling, CST and Opera electro- and magnetostatic simulations, upgrading HV vacuum feedthroughs, and assembly techniques for improving electrode alignment. The electric and magnetic fields required by the Wien condition and the successful HV characterization under vacuum conditions are also presented

Photoinjector improvements at CEBAF in support of parity violation experiments

Three photoinjector modifications were undertaken at CEBAF to help ensure successful completion of the PREx and Qweak parity violation experiments: the development of a pockels cell high voltage switch that provides stable voltages at 960 Hz helicity flip rate with 60 μs rise/fall time, the installation of a two-Wien-filter spin flipper for slow spin reversal, and the installation of a new photogun with inverted insulator geometry that operates at higher bias voltage

Production of highly-polarized positrons using polarized electrons at MeV energies

The Polarized Electrons for Polarized Positrons experiment at the injector of the Continuous Electron Beam Accelerator Facility has demonstrated for the first time the efficient transfer of polarization from electrons to positrons produced by the polarized bremsstrahlung radiation induced by a polarized electron beam in a high-$Z$ target. Positron polarization up to 82\% have been measured for an initial electron beam momentum of 8.19~MeV/$c$, limited only by the electron beam polarization. This technique extends polarized positron capabilities from GeV to MeV electron beams, and opens access to polarized positron beam physics to a wide community.Comment: 5 pages, 4 figure

Genetic Testing to Inform Epilepsy Treatment Management From an International Study of Clinical Practice

IMPORTANCE: It is currently unknown how often and in which ways a genetic diagnosis given to a patient with epilepsy is associated with clinical management and outcomes. OBJECTIVE: To evaluate how genetic diagnoses in patients with epilepsy are associated with clinical management and outcomes. DESIGN, SETTING, AND PARTICIPANTS: This was a retrospective cross-sectional study of patients referred for multigene panel testing between March 18, 2016, and August 3, 2020, with outcomes reported between May and November 2020. The study setting included a commercial genetic testing laboratory and multicenter clinical practices. Patients with epilepsy, regardless of sociodemographic features, who received a pathogenic/likely pathogenic (P/LP) variant were included in the study. Case report forms were completed by all health care professionals. EXPOSURES: Genetic test results. MAIN OUTCOMES AND MEASURES: Clinical management changes after a genetic diagnosis (ie, 1 P/LP variant in autosomal dominant and X-linked diseases; 2 P/LP variants in autosomal recessive diseases) and subsequent patient outcomes as reported by health care professionals on case report forms. RESULTS: Among 418 patients, median (IQR) age at the time of testing was 4 (1-10) years, with an age range of 0 to 52 years, and 53.8% (n = 225) were female individuals. The mean (SD) time from a genetic test order to case report form completion was 595 (368) days (range, 27-1673 days). A genetic diagnosis was associated with changes in clinical management for 208 patients (49.8%) and usually (81.7% of the time) within 3 months of receiving the result. The most common clinical management changes were the addition of a new medication (78 [21.7%]), the initiation of medication (51 [14.2%]), the referral of a patient to a specialist (48 [13.4%]), vigilance for subclinical or extraneurological disease features (46 [12.8%]), and the cessation of a medication (42 [11.7%]). Among 167 patients with follow-up clinical information available (mean [SD] time, 584 [365] days), 125 (74.9%) reported positive outcomes, 108 (64.7%) reported reduction or elimination of seizures, 37 (22.2%) had decreases in the severity of other clinical signs, and 11 (6.6%) had reduced medication adverse effects. A few patients reported worsening of outcomes, including a decline in their condition (20 [12.0%]), increased seizure frequency (6 [3.6%]), and adverse medication effects (3 [1.8%]). No clinical management changes were reported for 178 patients (42.6%). CONCLUSIONS AND RELEVANCE: Results of this cross-sectional study suggest that genetic testing of individuals with epilepsy may be materially associated with clinical decision-making and improved patient outcomes

Load-locked dc high voltage GaAs photogun with an inverted-geometry ceramic insulator

A new dc high voltage spin-polarized photoelectron gun has been constructed that employs a compact inverted-geometry ceramic insulator. Photogun performance at 100 kV bias voltage is summarized. I. INTRODUCTION All of the nuclear physics experiments conducted at the Continuous Electron Beam Accelerator Facility (CEBAF) at the Thomas Jefferson National Accelerator Facility (Jefferson Lab) receive electron beams from a dc high voltage spin-polarized GaAs photoemission gun. Since 1995, the year the first polarized electron source was installed at CEBAF [1], there have been four different photogun designs with each new gun an improvement over its predecessor. The most recent design employs a compact, tapered ceramic insulator that extends into the vacuum chamber. This gun geometry is commonly referred to as an ‘‘inverted’’ gun design, a reference to the first such implementation by Breidenbach et al., at SLAC [2]. The main reason for pursuing the inverted ceramic design at Jefferson Lab was to help overcome field emission problems of the previous gun design that used a conventional large-bore cylindrical ceramic insulator common to most dc high voltage spin-polarized GaAs photoguns worldwide [3–7]. The inverted insulator design helped to eliminate field emission because it provided a means to increase the distance between biased and grounded parts of the photogun. This helped reduce the field gradient at some locations not related to beam delivery. Perhaps more importantly, the design significantly reduced the amount of metal biased at high voltage, so there is less metal to generate field emission. Another appealing feature of the design is that the insulator is a common element of medical x-ray sources, and therefore relatively inexpensive compared to cylindrical insulators purchased solely for accelerator electron gun applications. This paper describes the CEBAF invertedgun design, construction, and performance

Charge and fluence lifetime measurements of a dc high voltage GaAs photogun at high average current

GaAs-based dc high voltage photoguns used at accelerators with extensive user programs must exhibit long photocathode operating lifetime. Achieving this goal represents a significant challenge for proposed high average current facilities that must operate at tens of milliamperes or more. This paper describes techniques to maintain good vacuum while delivering beam, and techniques that minimize the ill effects of ion bombardment, the dominant mechanism that reduces photocathode yield of a GaAs-based dc high voltage photogun. Experimental results presented here demonstrate enhanced lifetime at high beam currents by: (a) operating with the drive laser beam positioned away from the electrostatic center of the photocathode, (b) limiting the photocathode active area to eliminate photoemission from regions of the photocathode that do not support efficient beam delivery, (c) using a large drive laser beam to distribute ion damage over a larger area, and (d) by applying a relatively low bias voltage to the anode to repel ions created within the downstream beam line. A combination of these techniques provided the best total charge extracted lifetimes in excess of 1000 C at dc beam currents up to 9.5 mA, using green light illumination of bulk GaAs inside a 100 kV photogun