Raising Bi-O bands above the Fermi energy level of hole-doped Bi2_2Sr2_2CaCu2_2O8+δ_{8+\delta} and other cuprate superconductors

The Fermi surface (FS) of Bi$_2$Sr$_2$CaCu$_2$O$_{8+\delta}$ (Bi2212) predicted by band theory displays Bi-related pockets around the $(\pi,0)$ point, which have never been observed experimentally. We show that when the effects of hole doping either by substituting Pb for Bi or by adding excess O in Bi2212 are included, the Bi-O bands are lifted above the Fermi energy ($E_F$) and the resulting first-principles FS is in remarkable accord with measurements. With decreasing hole-doping the Bi-O bands drop below $E_F$ and the system self-dopes below a critical hole concentration. Computations on other Bi- as well as Tl- and Hg-based compounds indicate that lifting of the cation-derived band with hole doping is a general property of the electronic structures of the cuprates.Comment: 4 pages, 4 figures; PRL (2006, in press

Improved Current Densities in MgB2 By Liquid-Assisted Sintering

Polycrystalline MgB2 samples with GaN additions were prepared by reaction of Mg, B, and GaN powders. The presence of Ga leads to a low melting eutectic phase which allowed liquid phase sintering and produces plate-like grains. For low-level GaN additions (5% at. % or less), the critical transition temperature, Tc, remained unchanged and in 1T magnetic field, the critical current density, Jc was enhanced by a factor of 2 and 10, for temperatures of \~5K and 20K, respectively. The values obtained are approaching those of hot isostatically pressed samples.Comment: 12 pages, 1 table, 4 figures, accepted in Applied Physics Letter

Thin-Film Trilayer Manganate Junctions

Spin-dependent conductance across a manganate-barrier-manganate junction has recently been demonstrated. The junction is a La$_{0.67}$Sr$_{0.33}$MnO$_3$% -SrTiO$_3$-La$_{0.67}$ Sr$_{0.33}$MnO$_3$ trilayer device supporting current-perpendicular transport. Large magnetoresistance of up to a factor of five change was observed in these junctions at 4.2K in a relatively low field of the order of 100 Oe. Temperature and bias dependent studies revealed a complex junction interface structure whose materials physics has yet to be understood.Comment: 20 pages, 14 figures. To appear in Phil. Trans. R. Soc. Lond. A vol.356 (1998

Depairing critical current achieved in superconducting thin films with through-thickness arrays of artificial pinning centers

Large area arrays of through-thickness nanoscale pores have been milled into superconducting Nb thin films via a process utilizing anodized aluminum oxide thin film templates. These pores act as artificial flux pinning centers, increasing the superconducting critical current, Jc, of the Nb films. By optimizing the process conditions including anodization time, pore size and milling time, Jc values approaching and in some cases matching the Ginzburg-Landau depairing current of 30 MA/cm^2 at 5 K have been achieved - a Jc enhancement over as-deposited films of more than 50 times. In the field dependence of Jc, a matching field corresponding to the areal pore density has also been clearly observed. The effect of back-filling the pores with magnetic material has then been investigated. While back-filling with Co has been successfully achieved, the effect of the magnetic material on Jc has been found to be largely detrimental compared to voids, although a distinct influence of the magnetic material in producing a hysteretic Jc versus applied field behavior has been observed. This behavior has been tested for compatibility with currently proposed models of magnetic pinning and found to be most closely explained by a model describing the magnetic attraction between the flux vortices and the magnetic inclusions.Comment: 9 pages, 10 figure

Angular dependent vortex pinning mechanisms in YBCO coated conductors and thin films

We present a comparative study of the angular dependent critical current density in YBa2Cu3O7 films deposited on IBAD MgO and on single crystal MgO and SrTiO3 substrates. We identify three angular regimes where pinning is dominated by different types of correlated and uncorrelated defects. We show that those regimes are present in all cases, indicating that the pinning mechanisms are the same, but their extension and characteristics are sample dependent, reflecting the quantitative differences in texture and defect density. In particular, the more defective nature of the films on IBAD turns into an advantage as it results in stronger vortex pinning, demonstrating that the critical current density of the films on single crystals is not an upper limit for the performance of the IBAD coated conductors.Comment: 14 pages, 3 figures. Submitted to AP

An estimate for the Morse index of a Stokes wave

Stokes waves are steady periodic water waves on the free surface of an infinitely deep irrotational two dimensional flow under gravity without surface tension. They can be described in terms of solutions of the Euler-Lagrange equation of a certain functional. This allows one to define the Morse index of a Stokes wave. It is well known that if the Morse indices of the elements of a set of non-singular Stokes waves are bounded, then none of them is close to a singular one. The paper presents a quantitative variant of this result.Comment: This version contains an additional reference and some minor change

Enhancement of Critical Current Density in low level Al-doped MgB2

Two sets of MgB2 samples doped with up to 5 at. % of Al were prepared in different laboratories using different procedures. Decreases in the a and c lattice parameters were observed with Al doping confirming Al substitution onto the Mg site. The critical temperature (Tc) remained largely unchanged with Al doping. For 1 - 2.5 at.% doping, at 20K the in-field critical current densities (Jc's) were enhanced, particularly at lower fields. At 5K, in-field Jc was markedly improved, e.g. at 5T Jc was enhanced by a factor of 20 for a doping level of 1 at.% Al. The improved Jcs correlate with increased sample resistivity indicative of an increase in the upper critical field, Hc2, through alloying.Comment: 17 pages, 4 figures, to be published in Superconductor Science and Technolog