Improved position measurement of nano electromechanical systems using cross correlations

We consider position measurements using the cross-correlated output of two tunnel junction position detectors. Using a fully quantum treatment, we calculate the equation of motion for the density matrix of the coupled detector-detector-mechanical oscillator system. After discussing the presence of a bound on the peak-to-background ratio in a position measurement using a single detector, we show how one can use detector cross correlations to overcome this bound. We analyze two different possible experimental realizations of the cross correlation measurement and show that in both cases the maximum cross-correlated output is obtained when using twin detectors and applying equal bias to each tunnel junction. Furthermore, we show how the double-detector setup can be exploited to drastically reduce the added displacement noise of the oscillator.Comment: 9 pages, 1 figure; v2: new Sec.

Charge and momentum transfer in supercooled melts: Why should their relaxation times differ?

The steady state values of the viscosity and the intrinsic ionic-conductivity of quenched melts are computed, in terms of independently measurable quantities. The frequency dependence of the ac dielectric response is estimated. The discrepancy between the corresponding characteristic relaxation times is only apparent; it does not imply distinct mechanisms, but stems from the intrinsic barrier distribution for $\alpha$-relaxation in supercooled fluids and glasses. This type of intrinsic ``decoupling'' is argued not to exceed four orders in magnitude, for known glassformers. We explain the origin of the discrepancy between the stretching exponent $\beta$, as extracted from $\epsilon(\omega)$ and the dielectric modulus data. The actual width of the barrier distribution always grows with lowering the temperature. The contrary is an artifact of the large contribution of the dc-conductivity component to the modulus data. The methodology allows one to single out other contributions to the conductivity, as in ``superionic'' liquids or when charge carriers are delocalized, implying that in those systems, charge transfer does not require structural reconfiguration.Comment: submitted to J Chem Phy

Strong Correlation to Weak Correlation Phase Transition in Bilayer Quantum Hall Systems

At small layer separations, the ground state of a nu=1 bilayer quantum Hall system exhibits spontaneous interlayer phase coherence and has a charged-excitation gap E_g. The evolution of this state with increasing layer separation d has been a matter of controversy. In this letter we report on small system exact diagonalization calculations which suggest that a single phase transition, likely of first order, separates coherent incompressible (E_g >0) states with strong interlayer correlations from incoherent compressible states with weak interlayer correlations. We find a dependence of the phase boundary on d and interlayer tunneling amplitude that is in very good agreement with recent experiments.Comment: 4 pages, 4 figures included, version to appear in Phys. Rev. Let

Temperature dependent carrier lifetime studies on Ti-doped multicrystalline silicon

Carrier lifetimemeasurements were performed on deliberately Ti-doped multicrystalline silicon wafers using a temperature controlled photoconductance device. The dominant recombination center was found to be the double-donor level associated with interstitial titanium. The interstitial Ti concentrations in multicrystalline silicon wafers were determined by measuring the Shockley–Read–Hall time constant for holes and using the known values of the thermal velocity and capture cross section for holes of the double-donor level at different temperatures. The measured values of the Ti concentration were then used to determine the electron capture cross section of the double-donor level over the temperature range of 140–270 °C via the measured values of the Shockley–Read–Hall time constant for electrons and the known thermal velocity. Multiphonon emission was found to be the most likely capture mechanism for this temperature range for electron capture into the double-donor level of Ti in silicon. The effective segregation coefficient for Ti was estimated by fitting Scheil’s equation to the measured values of the Ti concentrations and their respective vertical positions in the ingot. If all Ti were present as the interstitial double-donor, a lower limit of 1.8×10⁻⁶ can be ascribed to the segregation coefficient, which is very close to the equilibrium value.This work was funded by an Australian Research Council Linkage Grant between the Australian National University, SierraTherm Production Furnaces, and SunPower Corporation. D.H.M. is supported by an Australian Research Council fellowship

Electrical transport through a single-electron transistor strongly coupled to an oscillator

We investigate electrical transport through a single-electron transistor coupled to a nanomechanical oscillator. Using a combination of a master-equation approach and a numerical Monte Carlo method, we calculate the average current and the current noise in the strong-coupling regime, studying deviations from previously derived analytic results valid in the limit of weak-coupling. After generalizing the weak-coupling theory to enable the calculation of higher cumulants of the current, we use our numerical approach to study how the third cumulant is affected in the strong-coupling regime. In this case, we find an interesting crossover between a weak-coupling transport regime where the third cumulant heavily depends on the frequency of the oscillator to one where it becomes practically independent of this parameter. Finally, we study the spectrum of the transport noise and show that the two peaks found in the weak-coupling limit merge on increasing the coupling strength. Our calculation of the frequency-dependence of the noise also allows to describe how transport-induced damping of the mechanical oscillations is affected in the strong-coupling regime.Comment: 11 pages, 9 figure

Spin-dependent Seebeck coefficients of Ni_{80}Fe_{20} and Co in nanopillar spin valves

We have experimentally determined the spin-dependent Seebeck coefficient of permalloy (Ni_{80}Fe_{20}) and cobalt (Co) using nanopillar spin valve devices. The devices were specifically designed to completely separate heat related effects from charge related effects. A pure heat current through the nanopillar spin valve, a stack of two ferromagnetic layers (F) separated by a non-magnetic layer (N), leads to a thermovoltage proportional to the spin-dependent Seebeck coefficient S_{S}=S_{\uparrow}-S_{\downarrow} of the ferromagnet, where S_{\uparrow} and S_{\downarrow} are the Seebeck coefficient for spin-up and spin-down electrons. By using a three-dimensional finite-element model (3D-FEM) based on spin-dependent thermoelectric theory, whose input material parameters were measured in separate devices, we were able to accurately determine a spin-dependent Seebeck coefficient of -1.8 microvolt/Kelvin and -4.5 microvolt/Kelvin for cobalt and permalloy, respectively corresponding to a Seebeck coefficient polarization P_{S}=S_{S}/S_{F} of 0.08 and 0.25, where S_{F} is the Seebeck coefficient of the ferromagnet. The results are in agreement with earlier theoretical work in Co/Cu multilayers and spin-dependent Seebeck and spin-dependent Peltier measurements in Ni_{80}Fe_{20}/Cu spin valve structures

Edge spin accumulation in semiconductor two-dimensional hole gases

The controlled generation of localized spin densities is a key enabler of semiconductor spintronics In this work, we study spin Hall effect induced edge spin accumulation in a two-dimensional hole gas with strong spin orbit interactions. We argue that it is an intrinsic property, in the sense that it is independent of the strength of disorder scattering. We show numerically that the spin polarization near the edge induced by this mechanism can be large, and that it becomes larger and more strongly localized as the spin-orbit coupling strength increases, and is independent of the width of the conducting strip once this exceeds the elastic scattering mean-free-path. Our experiments in two-dimensional hole gas microdevices confirm this remarkable spin Hall effect phenomenology. Achieving comparable levels of spin polarization by external magnetic fields would require laboratory equipment whose physical dimensions and operating electrical currents are million times larger than those of our spin Hall effect devices.Comment: 6 pages, 5 figure

Variations in signal-to-noise characteristics of tissue-equivalent attenuators for mammographic automatic exposure control system performance evaluation

PURPOSE: This work investigates the impact of tissue-equivalent attenuator choice on measured signal-to-noise ratio (SNR) for automatic exposure control (AEC) performance evaluation in digital mammography. It also investigates how the SNR changes for each material when used to evaluate AEC performance across different mammography systems. METHODS: AEC performance was evaluated for four mammography systems using seven attenuator sets at two thicknesses (4 and 8 cm). All systems were evaluated in 2D imaging mode, and one system was evaluated in digital breast tomosynthesis (DBT) mode. The methodology followed the 2018 ACR digital mammography quality control (DMQC) manual. Each system-attenuator-thickness combination was evaluated using For Processing images in ImageJ with standard ROI size and location. The closest annual physicist testing results were used to explore the impact of varying measured AEC performance on image quality. RESULTS: The measured SNR varied by 44%-54% within each system across all attenuators at 4 cm thickness in 2D mode. The variation appeared to be largely due to changes in measured noise, with variations of 46%-67% within each system across all attenuators at 4 cm thickness in 2D mode. Two systems had failing SNR levels for two of the materials using the minimum SNR criterion specified in the ACR DMQC manual. Similar trends were seen in DBT mode and at 8 cm thickness. Within each material, there was 115%-131% variation at 4 cm and 82%-114% variation at 8 cm in the measured SNR across the four imaging systems. Variation in SNR did not correlate with system operating level based on visual image quality and average glandular dose (AGD). CONCLUSION: Choice of tissue-equivalent attenuator for AEC performance evaluation affects measured SNR values. Depending on the material, the difference may be enough to result in failure following the longitudinal and absolute thresholds specified in the ACR DMQC manual

Chalcogenide phase change materials for nanoscale switching

Since the demonstration of threshold switching in chalcogenide alloys over forty five years ago, phase change materials have been extensively investigated for switching and data storage applications. Phase change switching is based on the reversible change between crystalline and amorphous states of a material and in many chalcogenides this change of state takes place in nanoseconds