Temperature dependent carrier lifetime studies of Mo in crystalline silicon

The capture cross sections of both electronsσn and holes σp were determined for interstitialmolybdenum in crystalline silicon over the temperature range of −110 to 150 °C. Carrier lifetimemeasurements were performed on molybdenum-contaminated silicon using a temperature controlled photoconductance instrument. Injection dependent lifetime spectroscopy was applied at each temperature to calculate σp and σn. This analysis involved a novel approach that independently determined the capture cross sections at each temperature assuming a known defect density and thermal velocity. Since the energy state is in the lower half of the bandgap, the determination of σp is unaffected by the defect energy at all temperatures, and σp is found to decrease with temperature in a fashion consistent with excitonic Auger capture. At temperatures below 0 °C, the determination of σn is also unaffected by the defect energy due to the suppression of thermal emission, and σn decreases with temperature as well. It is shown that a projection of σn to higher temperature suggests the defect has an energy of 0.375 eV above the valance band edge of silicon.D.M. likes to thank the Australian Research Council for fellowship and G.C. likes to thank “CrystalClear Integrated Project” Contract No. SES6-CT_2003-502583 funded by the European Commission

Modal Filters for Infrared Interferometry

Modal filters in the approximately equal to 10-micrometer spectral range have been implemented as planar dielectric waveguides in infrared interferometric applications such as searching for Earth-like planets. When looking for a small, dim object ("Earth") in close proximity to a large, bright object ("Sun"), the interferometric technique uses beams from two telescopes combined with a 180 phase shift in order to cancel the light from a brighter object. The interferometer baseline can be adjusted so that, at the same time, the light from the dimmer object arrives at the combiner in phase. This light can be detected and its infrared (IR) optical spectra can be studied. The cancellation of light from the "Sun" to approximately equal to 10(exp 6) is required; this is not possible without special devices-modal filters- that equalize the wavefronts arriving from the two telescopes. Currently, modal filters in the approximately equal to 10-micrometer spectral range are implemented as single- mode fibers. Using semiconductor technology, single-mode waveguides for use as modal filters were fabricated. Two designs were implemented: one using an InGaAs waveguide layer matched to an InP substrate, and one using InAlAs matched to an InP substrate. Photon Design software was used to design the waveguides, with the main feature all designs being single-mode operation in the 10.5- to 17-micrometer spectral range. Preliminary results show that the filter's rejection ratio is 26 dB

Generalized procedure to determine the dependence of steady-state photoconductance lifetime on the occupation of multiple defects

We present a procedure to determine the dependence of photoconductance lifetime on the occupation of multiple defects. The procedure requires numerical iteration, making it more cumbersome than the analytical equations available for single-defect and simplified two-defect cases, but enabling the following features: (i) it accounts for the defect concentration when calculating the equilibrium carrier concentrations, (ii) it permits recombination through any number of defects, (iii) it calculates the occupation fraction of all defects at any injection, and (iv) it promotes a good understanding of the role of defect occupation in photoconductance measurements. The utility of the numerical procedure is demonstrated on an experimental sample containing multiple defects. The dependence of the sample’s photoconductance on carrier concentration and temperature can be qualitatively described by the generalized procedure but not by either analytical model. The example also demonstrates that the influence of defect occupation on photoconductance lifetime measurements is mitigated at elevated temperatures—a conclusion of particular worth to the study of multicrystalline silicon.This work was funded by an Australian Research Council Linkage Grant between the Australian National University, SierraTherm Production Furnaces, and SunPower Corporation. D.M. is supported by an Australian Research Council fellowship

Method for Measuring Collimator-Pointing Sensitivity to Temperature Changes

For a variety of applications, it is important to measure the sensitivity of the pointing of a beam emerging from a collimator, as a function of temperature changes. A straightforward method for carrying out this measurement is based on using interferometry for monitoring the changes in beam pointing, which presents its own problems. The added temperature dependence and complexity issues relating to using an interferometer are addressed by not using an interferometer in the first place. Instead, the collimator is made part of an arrangement that uses a minimum number of low-cost, off-the-shelf materials and by using a quad diode to measure changes in beam pointing. In order to minimize the influence of the test arrangement on the outcome of the measurement, several steps are taken. The collimator assembly is placed on top of a vertical, 1-m-long, fused silica tube. The quad diode is bonded to a fused silica bar, which, in turn, is bonded to the lower end of the fused silica tube. The lower end of the tube rests on a self-aligning support piece, while the upper end of the tube is kept against two rounded setscrew tips, using a soft rubber string. This ensures that very little stress is applied to the tube as the support structure changes dimensions due to thermal expansion. Light is delivered to the collimator through a bare fiber in order to minimize variable bending torque caused by a randomly relaxing, rigid fiber jacket. In order to separate the effect of temperature on the collimator assembly from the effect temperature has on the rest of the setup, multiple measurements are taken with the collimator assembly rotated from measurement to measurement. Laboratory testing, with 1-m spacing between the collimator and the quad diode, has shown that the sensitivity of the arrangement is better than 100 nm rms, over time spans of at least one hour, if the beam path is protected from atmospheric turbulence by a tube. The equivalent sensitivity to detecting changes in pointing angle is 100 nanoradians

Randomized, open-label, phase 1/2a study to determine the maximum tolerated dose of intraventricular sustained release nimodipine for subarachnoid hemorrhage (NEWTON [Nimodipine Microparticles to Enhance Recovery While Reducing Toxicity After Subarachnoid Hemorrhage])

BACKGROUND AND PURPOSE—: We conducted a randomized, open-label, phase 1/2a, dose-escalation study of intraventricular sustained-release nimodipine (EG-1962) to determine safety, tolerability, pharmacokinetics, and clinical effects in aneurysmal subarachnoid hemorrhage. METHODS—: Subjects with aneurysmal subarachnoid hemorrhage repaired by clipping or coiling were randomized to EG-1962 or enteral nimodipine. Subjects were World Federation of Neurological Surgeons grade 2 to 4 and had an external ventricular drain. Cohorts of 12 subjects received 100 to 1200 mg EG-1962 (9 per cohort) or enteral nimodipine (3 per cohort). The primary objective was to determine the maximum tolerated dose. RESULTS—: Fifty-four subjects in North America were randomized to EG-1962, and 18 subjects were randomized to enteral nimodipine. The maximum tolerated dose was 800 mg. One serious adverse event related to EG-1962 (400 mg) and 2 EG-1962 dose-limiting toxicities were without clinical sequelae. There was no EG-1962-related hypotension compared with 17% (3/18) with enteral nimodipine. Favorable outcome at 90 days on the extended Glasgow outcome scale occurred in 27/45 (60%, 95% confidence interval 46%–74%) EG-1962 subjects (5/9 with 100, 6/9 with 200, 7/9 with 400, 4/9 with 600, and 5/9 with 800 mg) and 5/18 (28%, 95% confidence interval 7%–48%, relative risk reduction of unfavorable outcome; 1.45, 95% confidence interval 1.04–2.03; P=0.027) enteral nimodipine subjects. EG-1962 reduced delayed cerebral ischemia (14/45 [31%] EG-1962 versus 11/18 [61%] enteral nimodipine) and rescue therapy (11/45 [24%] versus 10/18 [56%]). CONCLUSIONS—: EG-1962 was safe and tolerable to 800 mg, and in this, aneurysmal subarachnoid hemorrhage population was associated with reduced delayed cerebral ischemia and rescue therapy. Overall, the rate of favorable clinical outcome was greater in the EG-1962-treated group. CLINICAL TRIAL REGISTRATION—: URL: http://www.clinicaltrials.gov. Unique identifier: NCT01893190

Ultrasound-triggered antibiotic release from PEEK clips to prevent spinal fusion infection: Initial evaluations.

Despite aggressive peri-operative antibiotic treatments, up to 10% of patients undergoing instrumented spinal surgery develop an infection. Like most implant-associated infections, spinal infections persist through colonization and biofilm formation on spinal instrumentation, which can include metal screws and rods for fixation and an intervertebral cage commonly comprised of polyether ether ketone (PEEK). We have designed a PEEK antibiotic reservoir that would clip to the metal fixation rod and that would achieve slow antibiotic release over several days, followed by a bolus release of antibiotics triggered by ultrasound (US) rupture of a reservoir membrane. We have found using human physiological fluid (synovial fluid), that higher levels (100–500 μg) of vancomycin are required to achieve a marked reduction in adherent bacteria vs. that seen in the common bacterial medium, trypticase soy broth. To achieve these levels of release, we applied a polylactic acid coating to a porous PEEK puck, which exhibited both slow and US-triggered release. This design was further refined to a one-hole or two-hole cylindrical PEEK reservoir that can clip onto a spinal rod for clinical use. Short-term release of high levels of antibiotic (340 ± 168 μg), followed by US-triggered release was measured (7420 ± 2992 μg at 48 h). These levels are sufficient to prevent adhesion of Staphylococcus aureus to implant materials. This study demonstrates the feasibility of an US-mediated antibiotic delivery device, which could be a potent weapon against spinal surgical site infection. Statement of Significance: Spinal surgical sites are prone to bacterial colonization, due to presence of instrumentation, long surgical times, and the surgical creation of a dead space (≥5 cm 3 ) that is filled with wound exudate. Accordingly, it is critical that new approaches are developed to prevent bacterial colonization of spinal implants, especially as neither bulk release systems nor controlled release systems are available for the spine. This new device uses non-invasive ultrasound (US) to trigger bulk release of supra-therapeutic doses of antibiotics from materials commonly used in existing surgical implants. Thus, our new delivery system satisfies this critical need to eradicate surviving bacteria, prevent resistance, and markedly lower spinal infection rates

Gettering of interstitial iron in silicon by plasma-enhanced chemical vapour deposited silicon nitride films

It is known that the interstitial iron concentration in silicon is reduced after annealing silicon wafers coated with plasma-enhanced chemical vapour deposited (PECVD) silicon nitride films. The underlying mechanism for the significant iron reduction has remained unclear and is investigated in this work. Secondary ion mass spectrometry (SIMS) depth profiling of iron is performed on annealed iron-contaminated single-crystalline silicon wafers passivated with PECVD silicon nitride films. SIMS measurements reveal a high concentration of iron uniformly distributed in the annealed silicon nitride films. This accumulation of iron in the silicon nitride film matches the interstitial iron loss in the silicon bulk. This finding conclusively shows that the interstitial iron is gettered by the silicon nitride films during annealing over a wide temperature range from 250 °C to 900 °C, via a segregation gettering effect. Further experimental evidence is presented to support this finding. Deep-level transient spectroscopy analysis shows that no new electrically active defects are formed in the silicon bulk after annealing iron-containing silicon with silicon nitride films, confirming that the interstitial iron loss is not due to a change in the chemical structure of iron related defects in the silicon bulk. In addition, once the annealed silicon nitride films are removed, subsequent high temperature processes do not result in any reappearance of iron. Finally, the experimentally measured iron decay kinetics are shown to agree with a model of iron diffusion to the surface gettering sites, indicating a diffusion-limited iron gettering process for temperatures below 700 °C. The gettering process is found to become reaction-limited at higher temperatures

Compartmentalised expression of meprin in small intestinal mucosa: enhanced expression in lamina propria in coeliac disease

Epithelial cells in the human small intestine express meprin, an astacin-like metalloprotease, which accumulates normally at the brush border membrane and in the gut lumen. Therefore, meprin is targeted towards luminal components. In coeliac disease patients, peptides from ingested cereals trigger mucosal inflammation in the small intestine, disrupting epithelial cell differentiation and function. Using in situ hybridisation on duodenal tissue sections, we observed a marked shift of meprin mRNA expression from epithelial cells, the predominant expression site in normal mucosa, to lamina propria leukocytes in coeliac disease. Meprin thereby gains access to the substrate repertoire present beneath the epitheliu

Permanent annihilation of thermally activated defects which limit the lifetime of float-zone silicon

We have observed very large changes in the minority carrier lifetime when high purity float-zone (FZ) silicon wafers are subject to heat-treatments in the range of 200– 1100˚C. Recombination centres were found to become activated upon annealing at 450–700˚C, causing significant reductions in the bulk lifetime, detrimental for high efficiency solar cells and stable high powered devices. Photoluminescence imaging of wafers annealed at 500˚C revealed concentric circular patterns, with lower lifetimes occurring in the centre, and higher lifetimes around the periphery. Deep level transient spectroscopy measurements on samples extracted from the centre of an n-type FZ silicon wafer annealed at 500˚C revealed a large variety of defects with activation energies ranging between 0.16– 0.36eV. Our measurements indicate that vacancy related defects are causing the severe degradation in lifetime when FZ wafers are annealed at 450–700˚C. Upon annealing FZ silicon at temperatures >800°C, the lifetime is completely recovered, whereby the defect-rich regions vanish and do not reappear (permanently annihilated). Our results indicate that, in general, as-grown FZ silicon should not be assumed to be defect lean, nor can it be assumed that the bulk lifetime will remain stable during thermal processing, unless annealed at temperatures >1000°C