Digital numerically controlled oscillator

The frequency and phase of an output signal from an oscillator circuit are controlled with accuracy by a digital input word. Positive and negative alterations in output frequency are both provided for by translating all values of input words so that they are positive. The oscillator reference frequency is corrected only in one direction, by adding phase to the output frequency of the oscillator. The input control word is translated to a single algebraic sign and the digital 1 is added thereto. The translated input control word is then accumulated. A reference clock signal having a frequency at an integer multiple of the desired frequency of the output signal is generated. The accumulated control word is then compared with a threshold level. The output signal is adjusted in a single direction by dividing the frequency of the reference clock signal by a first integer or by an integer different from the first integer

Reexamining the "finite-size" effects in isobaric yield ratios using a statistical abrasion-ablation model

The "finite-size" effects in the isobaric yield ratio (IYR), which are shown in the standard grand-canonical and canonical statistical ensembles (SGC/CSE) method, is claimed to prevent obtaining the actual values of physical parameters. The conclusion of SGC/CSE maybe questionable for neutron-rich nucleus induced reaction. To investigate whether the IYR has "finite-size" effects, the IYR for the mirror nuclei [IYR(m)] are reexamined using a modified statistical abrasion-ablation (SAA) model. It is found when the projectile is not so neutron-rich, the IYR(m) depends on the isospin of projectile, but the size dependence can not be excluded. In reactions induced by the very neutron-rich projectiles, contrary results to those of the SGC/CSE models are obtained, i.e., the dependence of the IYR(m) on the size and the isospin of the projectile is weakened and disappears both in the SAA and the experimental results.Comment: 5 pages and 4 figure

The groupoidal analogue Theta~ to Joyal's category Theta is a test category

We introduce the groupoidal analogue \tilde\Theta to Joyal's cell category \Theta and we prove that \tilde\Theta is a strict test category in the sense of Grothendieck. This implies that presheaves on \tilde\Theta model homotopy types in a canonical way. We also prove that the canonical functor from \Theta to \tilde\Theta is aspherical, again in the sense of Grothendieck. This allows us to compare weak equivalences of presheaves on \tilde\Theta to weak equivalences of presheaves on \Theta. Our proofs apply to other categories analogous to \Theta.Comment: 41 pages, v2: references added, Remark 7.3 added, v3: metadata update

Spectral Representation for the Effective Macroscopic Response of a Polycrystal: Application to Third-Order Nonlinear Susceptibility

Erratum: In our paper, we show that the spectral representation for isotropic two-component composites also applies to uniaxial polycrystals. We have learned that this result was, in fact, first conjectured by G.W. Milton. While our derivation is more detailed, our result for the spectral function is the same as Milton's. We very much regret not having been aware of this work at the time of writing our paper. Original abstract: We extend the spectral theory used for the calculation of the effective linear response functions of composites to the case of a polycrystalline material with uniaxially anisotropic microscopic symmetry. As an application, we combine these results with a nonlinear decoupling approximation as modified by Ma et al., to calculate the third-order nonlinear optical susceptibility of a uniaxial polycrystal, assuming that the effective dielectric function of the polycrystal can be calculated within the effective-medium approximation.Comment: v2 includes erratum and the original preprin

Phase Relations in the Li2O-V2O3-V2O5 System at 700 C: Correlations with Magnetic Defect Concentration in Heavy Fermion LiV2O4

The phase relations in the Li2O-V2O3-V2O5 ternary system at 700 C for compositions in equilibrium with LiV2O4 are reported. This study clarified the synthesis conditions under which low and high magnetic defect concentrations can be obtained within the spinel structure of LiV2O4. We confirmed that the LiV2O4 phase can be obtained containing low (0.006 mol%) to high (0.83 mol%) magnetic defect concentrations n{defect} and with consistently high magnetic defect spin S values between 3 and 6.5. The high n{defect} values were obtained in the LiV2O4 phase in equilibrium with V2O3, Li3VO4, or LiVO2 and the low values in the LiV2O4 phase in equilibrium with V3O5. A model is suggested to explain this correlation.Comment: 6 pages, 7 figures; Phys. Rev. B (accepted

Current-oscillator correlation and Fano factor spectrum of quantum shuttle with finite bias voltage and temperature

A general master equation is derived to describe an electromechanical single-dot transistor in the Coulomb blockade regime. In the equation, Fermi distribution functions in the two leads are taken into account, which allows one to study the system as a function of bias voltage and temperature of the leads. Furthermore, we treat the coherent interaction mechanism between electron tunneling events and the dynamics of excited vibrational modes. Stationary solutions of the equation are numerically calculated. We show current through the oscillating island at low temperature appears step like characteristics as a function of the bias voltage and the steps depend on mean phonon number of the oscillator. At higher temperatures the current steps would disappear and this event is accompanied by the emergence of thermal noise of the charge transfer. When the system is mainly in the ground state, zero frequency Fano factor of current manifests sub-Poissonian noise and when the system is partially driven into its excited states it exhibits super-Poissonian noise. The difference in the current noise would almost be removed for the situation in which the dissipation rate of the oscillator is much larger than the bare tunneling rates of electrons.Comment: 14 pages, 8 figure

A Hybrid model for the origin of photoluminescence from Ge nanocrystals in SiO2_2 matrix

In spite of several articles, the origin of visible luminescence from germanium nanocrystals in SiO$_2$ matrix is controversial even today. Some authors attribute the luminescence to quantum confinement of charge carriers in these nanocrystals. On the other hand, surface or defect states formed during the growth process, have also been proposed as the source of luminescence in this system. We have addressed this long standing query by simultaneous photoluminescence and Raman measurements on germanium nanocrystals embedded in SiO$_2$ matrix, grown by two different techniques: (i) low energy ion-implantation and (ii) atom beam sputtering. Along with our own experimental observations, we have summarized relevant information available in the literature and proposed a \emph{Hybrid Model} to explain the visible photoluminescence from nanocrystalline germanium in SiO$_2$ matrix.Comment: 23 pages, 8 figure