Assessing the Nature of the Distribution of Localised States in Bulk GaAsBi.

A comprehensive assessment of the nature of the distribution of sub band-gap energy states in bulk GaAsBi is presented using power and temperature dependent photoluminescence spectroscopy. The observation of a characteristic red-blue-red shift in the peak luminescence energy indicates the presence of short-range alloy disorder in the material. A decrease in the carrier localisation energy demonstrates the strong excitation power dependence of localised state behaviour and is attributed to the filling of energy states furthest from the valence band edge. Analysis of the photoluminescence lineshape at low temperature presents strong evidence for a Gaussian distribution of localised states that extends from the valence band edge. Furthermore, a rate model is employed to understand the non-uniform thermal quenching of the photoluminescence and indicates the presence of two Gaussian-like distributions making up the density of localised states. These components are attributed to the presence of microscopic fluctuations in Bi content, due to short-range alloy disorder across the GaAsBi layer, and the formation of Bi related point defects, resulting from low temperature growth

GaSbBi alloys and heterostructures: fabrication and properties

International audienceDilute bismuth (Bi) III-V alloys have recently attracted great attention, due to their properties of band-gap reduction and spin-orbit splitting. The incorporation of Bi into antimonide based III-V semiconductors is very attractive for the development of new optoelectronic devices working in the mid-infrared range (2-5 µm). However, due to its large size, Bi does not readily incorporate into III-V alloys and the epitaxy of III-V dilute bismides is thus very challenging. This book chapter presents the most recent developments in the epitaxy and characterization of GaSbBi alloys and heterostructures

Mid-infrared laser-based detection of benzene

Benzene (C6H6) is one of the major public health concerns. It is emitted from various natural and anthropogenic sources, like fires and volcanic emissions, petrol service stations, transportation, and the plastics industry. Here, we present our work on developing a new benzene sensor using a widely tunable difference-frequency-generation (DFG) laser emitting between 11.56 and 15 mu m ( 667-865 cm(-1)). The DFG process was realized between an external-cavity quantum-cascadelaser and a CO2 gas laser in a nonlinear, orientation-patterned GaAs crystal. We obtained the absorption cross-sections of the Q-branch of the.4 vibrational band of benzene by tuning the wavelength of the DFG laser between 14.79 and 14.93 mu m (670-676 cm(-1)). Benzene sensing measurements were performed near 14.84 mu m (673.97 cm(-1)) with a direct laser absorption spectroscopy scheme. The benzene concentration was varied between ppb and ppm levels. Even with a relatively short optical path-length of 23 cm, our sensor achieved a benzene detection limit of about 10 ppb